US4935386A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing semiconductor device including substrate bonding and outdiffusion by thermal heating
Assignee: Toshiba Corp
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Filing: 1988-02-26
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Granted: 1990-06-19
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Expires: 2008-02-26
Abstract
Abstract A method of manufacturing a semiconductor device comprising the steps of bringing a mirror-polished surface of a first semiconductor substrate of a first conductivity type into contact with a mirror-polished surface of a second semiconductor substrate of a second conductivity type having an impurity concentration which is lower than that of said first conductivity type, in a clean atmosphere, and thermally heating said first and second semiconductor substrates so that they unite. Impurity is diffused from said first semicondutor substrate into said second semiconductor substrate, thereby forming a diffusion layer of a first conductivity type in said second semiconductor substrate. A total amount of impurity of said diffusion layer is 1×10 13 /cm 2 to 2×10 15 /cm 2 , to form a pn junction in said second semiconductor substrate.
Inventors
- 👤 Akio Nakagawa
- 👤 Kaoru Imamura
- 👤 Ryo Sato
- 👤 Tadahide Hoshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:19
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/01; H10D12/031; H10D12/032; H10P; H10P10/00; H10P10/12; H10P10/128; H10P32/00; H10P32/10; H10P32/15; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/157
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
168 words
A method of manufacturing a semiconductor device, comprising the steps or bringing a mirror-polished surface of a first silicon substrate of a first conductivity type into contact with a mirror-polished surface of an ion-implanted layer of a second conductivity type formed in a second silicon substrate of a second conductivity type which contains an impurity concentration lower than that of said first conductivity type and that contained in said ion-implanted layer, in a clean atmosphere, to unite said first and silicon substrates, and heating the united substrates at a temperature of 200° C. or more, but less than 1200° C., and for a time sufficient to diffuse an impurity from said silicon substrate into said second ion-implanted layer, thereby forming a diffusion layer of a first conductivity type having an impurity concentration of 1×10 13 /cm 2 to 2×10 15 /cm 2 in said second silicon substrate, said diffusion layer having a thickness of 6 μm or less and forming a pn junction in said second silicon substrate.
Claim 2
Independent Claim
168 words
A method of manufacturing a semiconductor device, comprising the steps or bringing a mirror-polished surface of a first silicon substrate of a first conductivity type into contact with a mirror-polished surface of an ion-implanted layer of a second conductivity type formed in a second silicon substrate of a second conductivity type which contains an impurity concentration lower than that of said first conductivity type and that contained in said ion-implanted layer, in a clean atmosphere, to unite said first and silicon substrates, and heating the united substrates at a temperature of 200° C. or more, but less than 1200° C., and for a time sufficient to diffuse an impurity from said silicon substrate into said second ion-implanted layer, thereby forming a diffusion layer of a first conductivity type having an impurity concentration of 1×10 13 /cm 2 to 2×10 15 /cm 2 in said second silicon substrate, said diffusion layer having a thickness of 6 μm or less and forming a pn junction in said second silicon substrate.
Claim 3
Dependent Claim
26 words
A method according to claim 1, in which the impurity concentration of the diffusing layer is 1×10 14 /cm 2 to 1×10 15 /cm 2 .
Claim 4
Dependent Claim
19 words
A method according to claim 1, in which the thickness of said diffusion layer is 3 to 6 μm.
Claim 5
Dependent Claim
33 words
A method according to claim 1, in which the impurity concentration in said remaining part of said second conductivity type diffusion layer is 5×10 13 /cm 2 to 1×10 15 /cm 2 .
Claim 6
Dependent Claim
33 words
A method according to claim 4, in which the impurity concentration in said remaining part of said second conductivity type diffusion layer is 5×10 13 /cm 2 to 5×10 14 /cm 2 .
Claim 7
Dependent Claim
20 words
A method according to claim 1, in which said first and second semiconductor substrates have different indices of a plan.
Claim 8
Dependent Claim
21 words
A method according to claim 1, in which a lifetime killer is thermally diffused into said first and second semiconductor substrates.
Claim 9
Independent Claim
159 words
A method of manufacturing a semiconductor device, comprising the steps of bringing a mirror-polished surface of a first silicon substrate of a first conductivity type into contact with a mirror-polished surface of a second silicon substrate of a second conductivity type having a lower impurity concentration than that of said first conductivity type, in a clean atmosphere without any thermal fusion, and thermally heating said first and second silicon substrates at a temperature of 200° C. or more, but less than 1200° C., and for a time sufficient so that their bonding strength increased and an impurity is diffused from said first silicon substrate into said second silicon substrate, thereby to form a diffusion layer of a first conductivity type and a pn junction in said second silicon substrate, said diffusion layer having a thickness of 6 μm or less and an impurity concentration of said diffusion layer being 1×10 13 /cm 2 to 2×10 15 /cm 2 .
Claim 10
Independent Claim
159 words
A method of manufacturing a semiconductor device, comprising the steps of bringing a mirror-polished surface of a first silicon substrate of a first conductivity type into contact with a mirror-polished surface of a second silicon substrate of a second conductivity type having a lower impurity concentration than that of said first conductivity type, in a clean atmosphere without any thermal fusion, and thermally heating said first and second silicon substrates at a temperature of 200° C. or more, but less than 1200° C., and for a time sufficient so that their bonding strength increased and an impurity is diffused from said first silicon substrate into said second silicon substrate, thereby to form a diffusion layer of a first conductivity type and a pn junction in said second silicon substrate, said diffusion layer having a thickness of 6 μm or less and an impurity concentration of said diffusion layer being 1×10 13 /cm 2 to 2×10 15 /cm 2 .
Claim 11
Independent Claim
177 words
A method of manufacturing a semiconductor device, comprising the steps of bringing a mirror-polished surface of a first silicon substrate of a first conductivity type and having a resistivity of 0.01 to 0.05Ω·cm into contact with a mirror-polished surface of an ion-implanted layer of a second conductivity type formed in a second silicon substrate of a second conductivity type which contains an impurity concentration lower than that of said first conductivity type and that contained in said ion-implanted layer, in a clean atmosphere, to unite said first and silicon substrates, and heating the united substrates at a temperature of 200° C. or more, but less than 1200° C., and for a time sufficient to diffuse an impurity from said first silicon substrate into said second ion-implanted layer, thereby forming a diffusion layer of a first conductivity type having an impurity concentration of 1×10 13 /cm 2 to 2×10 15 /cm 2 in said second silicon substrate, said diffusion layer having a thickness of 3 to 7 μm and forming a pn junction in said second silicon substrate.
Claim 12
Independent Claim
177 words
A method of manufacturing a semiconductor device, comprising the steps of bringing a mirror-polished surface of a first silicon substrate of a first conductivity type and having a resistivity of 0.01 to 0.05Ω·cm into contact with a mirror-polished surface of an ion-implanted layer of a second conductivity type formed in a second silicon substrate of a second conductivity type which contains an impurity concentration lower than that of said first conductivity type and that contained in said ion-implanted layer, in a clean atmosphere, to unite said first and silicon substrates, and heating the united substrates at a temperature of 200° C. or more, but less than 1200° C., and for a time sufficient to diffuse an impurity from said first silicon substrate into said second ion-implanted layer, thereby forming a diffusion layer of a first conductivity type having an impurity concentration of 1×10 13 /cm 2 to 2×10 15 /cm 2 in said second silicon substrate, said diffusion layer having a thickness of 3 to 7 μm and forming a pn junction in said second silicon substrate.
References Cited (Backward Citations)
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