US4935381A
Expired / Lapsed
US
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Process for growing GaAs epitaxial layers
Assignee: Aerospace Corp
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Filing: 1988-12-09
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Granted: 1990-06-19
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Expires: 2008-12-09
Abstract
Abstract Disclosed is a novel method to use arsine plus an alkylarsenic co-reagent to grow GaAs by OMCVD that not only allows one to take advantage of the lower toxicity and ease of decomposition of the alkylarsenic compounds, but also reduces the carbon contamination normally found in epilayers grown exclusively from these alkylarsines, and decreases the amount of arsine needed for growth of reasonably good quality GaAs epilayers.
Inventors
- 👤 Donna M. Speckman
- 👤 Jerry P. Wendt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:44
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/40; C30B29/42; Y; Y10; Y10S; Y10S148/00; Y10S148/041; Y10S148/065; Y10S148/11
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
114 words
A method of growing high quality galliuim arsenide (GaAs) epitaxial layers by organo metallic chemical vapor deposition (OMCVD), comprising the following steps: a. placing a GaAs substrate wafer in an OMCVD reactor; b. heating the wafer to a temperature of between 550°-600° C. in a carrier gas flow; c. injecting into the reactor, reagents consisting of a trialkylarsenic (R 3 As) species, arsine and Me 3 Ga, wherein the molar ratio of total arsenic to gallium is in the range between 5-45; d. whereby crystalline GaAs is deposited on the wafer in smooth layers; e. and wherein the decomposition of the arsine reagent is enhanced due to a chemical reaction with the trialkylarsenic reagent.
Claim 2
Independent Claim
114 words
A method of growing high quality galliuim arsenide (GaAs) epitaxial layers by organo metallic chemical vapor deposition (OMCVD), comprising the following steps: a. placing a GaAs substrate wafer in an OMCVD reactor; b. heating the wafer to a temperature of between 550°-600° C. in a carrier gas flow; c. injecting into the reactor, reagents consisting of a trialkylarsenic (R 3 As) species, arsine and Me 3 Ga, wherein the molar ratio of total arsenic to gallium is in the range between 5-45; d. whereby crystalline GaAs is deposited on the wafer in smooth layers; e. and wherein the decomposition of the arsine reagent is enhanced due to a chemical reaction with the trialkylarsenic reagent.
Claim 3
Dependent Claim
13 words
The method as claimed in claim 1 wherein the carrier gas is hydrogen.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-06-18 | 1993-12-18 | 1994-06-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-18 | 1997-12-18 | 1998-06-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-18 | 2001-12-18 | 2002-06-19 | $7700.00 | Window Closed / Lapsed |