US4814203A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Vapor deposition of arsenic
Assignee: Texas Instruments Inc
•
Filing: 1988-02-16
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Granted: 1989-03-21
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Expires: 2008-02-16
Abstract
Abstract In a vapor deposition process (e.g. MOCVD) for producing an arsenic-containing film on a substrate by thermally decomposing at least a vaporous organo arsenic compound upon a heated substrate, the improvement wherein the organo arsenic compound consists essentially of a C 1 to C 3 monoalkylarsine carried to the heated substrate by means of a flow of an inert carrier gas.
Inventors
- 👤 Robert N. DePriest
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 08:34
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/301
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
66 words
In a vapor deposition process for producing an arsenic-containing film on a substrate by thermally decomposing at least a vaporous organo arsenic compound upon a heated substrate, the improvement wherein the organo arsenic compound consists essentially of a monoalkylarsine carried to the heated substrate by means of a flow of an inert carrier gas, said monoalkylarsine having up to 3 carbon atoms in the alkyl group.
Claim 2
Dependent Claim
66 words
In a vapor deposition process for producing an arsenic-containing film on a substrate by thermally decomposing at least a vaporous organo arsenic compound upon a heated substrate, the improvement wherein the organo arsenic compound consists essentially of a monoalkylarsine carried to the heated substrate by means of a flow of an inert carrier gas, said monoalkylarsine having up to 3 carbon atoms in the alkyl group.
Claim 3
Dependent Claim
10 words
A process of claim 1 conducted at substantially atmospheric pressure.
Claim 4
Dependent Claim
12 words
A process of claim 1 wherein the monoalkylarsine is etylarsine or propylarsine.
Claim 5
Dependent Claim
70 words
In a vapor deposition process for producing an arsenic-containing film on a substrate by thermally decomposing at least a vaporous organo arsenic compound upon a heated substrate, the improvement wherein the organo arsenic compound is a monoalkylarsine having up to 3 carbon atoms in the alkyl group and is transported at substantially atmospheric or below atmospheric pressure to the heated substrate by means of and in an inert carrier gas.
Claim 6
Dependent Claim
70 words
In a vapor deposition process for producing an arsenic-containing film on a substrate by thermally decomposing at least a vaporous organo arsenic compound upon a heated substrate, the improvement wherein the organo arsenic compound is a monoalkylarsine having up to 3 carbon atoms in the alkyl group and is transported at substantially atmospheric or below atmospheric pressure to the heated substrate by means of and in an inert carrier gas.
Claim 7
Dependent Claim
12 words
A process of claim 4 wherein the monoalkylarsine is ethylarsine or propylarsine.
Claim 8
Dependent Claim
18 words
A process of claim 1 wherein the monoalkylarsine is propylarsine and the carrier gas is hydrogen or nitrogen.
Claim 9
Dependent Claim
18 words
A process of claim 4 wherein the monoalkylarsine is propylarsine and the carrier gas is hydrogen or nitrogen.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-20 | 1992-09-19 | 1993-03-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-20 | 1996-09-19 | 1997-03-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-20 | 2000-09-19 | 2001-03-21 | $7700.00 | Window Closed / Lapsed |