Patent US4814203A successfully refreshed from Google Patents.
US4814203A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Vapor deposition of arsenic
Assignee: Texas Instruments Inc
•
Filing: 1988-02-16
•
Granted: 1989-03-21
•
Expires: 2008-02-16
Abstract
Abstract In a vapor deposition process (e.g. MOCVD) for producing an arsenic-containing film on a substrate by thermally decomposing at least a vaporous organo arsenic compound upon a heated substrate, the improvement wherein the organo arsenic compound consists essentially of a C 1 to C 3 monoalkylarsine carried to the heated substrate by means of a flow of an inert carrier gas.
Inventors
- 👤 Robert N. DePriest
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 18:34
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/301
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
66 words
In a vapor deposition process for producing an arsenic-containing film on a substrate by thermally decomposing at least a vaporous organo arsenic compound upon a heated substrate, the improvement wherein the organo arsenic compound consists essentially of a monoalkylarsine carried to the heated substrate by means of a flow of an inert carrier gas, said monoalkylarsine having up to 3 carbon atoms in the alkyl group.
Claim 2
Dependent Claim
66 words
In a vapor deposition process for producing an arsenic-containing film on a substrate by thermally decomposing at least a vaporous organo arsenic compound upon a heated substrate, the improvement wherein the organo arsenic compound consists essentially of a monoalkylarsine carried to the heated substrate by means of a flow of an inert carrier gas, said monoalkylarsine having up to 3 carbon atoms in the alkyl group.
Claim 3
Dependent Claim
10 words
A process of claim 1 conducted at substantially atmospheric pressure.
Claim 4
Dependent Claim
12 words
A process of claim 1 wherein the monoalkylarsine is etylarsine or propylarsine.
Claim 5
Dependent Claim
70 words
In a vapor deposition process for producing an arsenic-containing film on a substrate by thermally decomposing at least a vaporous organo arsenic compound upon a heated substrate, the improvement wherein the organo arsenic compound is a monoalkylarsine having up to 3 carbon atoms in the alkyl group and is transported at substantially atmospheric or below atmospheric pressure to the heated substrate by means of and in an inert carrier gas.
Claim 6
Dependent Claim
70 words
In a vapor deposition process for producing an arsenic-containing film on a substrate by thermally decomposing at least a vaporous organo arsenic compound upon a heated substrate, the improvement wherein the organo arsenic compound is a monoalkylarsine having up to 3 carbon atoms in the alkyl group and is transported at substantially atmospheric or below atmospheric pressure to the heated substrate by means of and in an inert carrier gas.
Claim 7
Dependent Claim
12 words
A process of claim 4 wherein the monoalkylarsine is ethylarsine or propylarsine.
Claim 8
Dependent Claim
18 words
A process of claim 1 wherein the monoalkylarsine is propylarsine and the carrier gas is hydrogen or nitrogen.
Claim 9
Dependent Claim
18 words
A process of claim 4 wherein the monoalkylarsine is propylarsine and the carrier gas is hydrogen or nitrogen.
References Cited (Backward Citations)
US3224913A
Cited
US3364084A
Cited
US3342551A
Cited
US3101280A
Cited
US3312570A
Cited
US3218203A
Cited
US3261726A
Cited
US3312571A
Cited
US3226270A
Cited
US3462323A
Cited
US4250205A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-03-20 | 1992-09-19 | 1993-03-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-03-20 | 1996-09-19 | 1997-03-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-03-20 | 2000-09-19 | 2001-03-21 | $7700.00 | Window Closed / Lapsed |