Patent US4931351A successfully refreshed from Google Patents.
US4931351A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bilayer lithographic process
Assignee: Eastman Kodak Co
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Filing: 1989-07-13
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Granted: 1990-06-05
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Expires: 2009-07-13
Abstract
Abstract A method for producing high resolution patterned resist images having excellent etch resistance and superior thermal and dimensional stability comprises the steps of: (a) forming a planarizing layer resistant to silicon uptake on a substrate; (b) providing a positive-working photoresist composition containing --OH or --NH-- groups over the planarizing layer, (c) imagewise exposing the resist to activating radiation, (d) developing the exposed resist, (e) contacting the developed resist with a vapor comprising a silicon-containing compound to effect silylation thereof and thereby impart etch resistance, the silicon-containing compound having the structural formula: ##STR1## wherein: X 1 and X 2 are individually chloro or ##STR2## wherein R 3 and R 4 are individually H or alkyl; and R 1 and R 2 are individually H or alkyl; and (f) contacting the planarizing layer with an oxygen-containing plasma so as to preferentially remove portions thereof.
Inventors
- 👤 William C. McColgin
- 👤 Thomas B. Brust
- 👤 Robert C. Daly
- 👤 Joseph Jech, Jr.
- 👤 Robert D. Lindholm
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:45
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/40; G03F7/405; G03F7/004; G03F7/09; G03F7/094
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
180 words
A method for producing a patterned high resolution, thermally and dimensionally stable resist image on a substrate comprising the steps of: (a) forming a planarizing layer resistant to silicon uptake on a substrate, (b) providing a positive-working photoresist composition containing --OH or --NH-- groups over said planarizing layer. (c) imagewise exposing said resist to activating radiation, (d) developing said exposed resist, (e) contacting said developed resist with a vapor comprising a silicon-containing compound for a time less than 2 hours to effect silylation thereof and thereby impart etch resistance, said silicon-containing compound having the structural formula: ##STR6## wherein: X 1 and X 2 are individually chloro or ##STR7## wherein R 3 and R 4 are individually H or alkyl containing from 1 to 3 carbon atoms; and R 1 and R 2 are individually H or alkyl containing from 1 to 3 carbon atoms; and wherein at least one of R 1 , R 2 , R 3 and R 4 is H; and (f) contacting said planarizing layer with an oxygen-containing plasma so as to preferentially remove portions thereof.
Claim 2
Independent Claim
180 words
A method for producing a patterned high resolution, thermally and dimensionally stable resist image on a substrate comprising the steps of: (a) forming a planarizing layer resistant to silicon uptake on a substrate, (b) providing a positive-working photoresist composition containing --OH or --NH-- groups over said planarizing layer. (c) imagewise exposing said resist to activating radiation, (d) developing said exposed resist, (e) contacting said developed resist with a vapor comprising a silicon-containing compound for a time less than 2 hours to effect silylation thereof and thereby impart etch resistance, said silicon-containing compound having the structural formula: ##STR6## wherein: X 1 and X 2 are individually chloro or ##STR7## wherein R 3 and R 4 are individually H or alkyl containing from 1 to 3 carbon atoms; and R 1 and R 2 are individually H or alkyl containing from 1 to 3 carbon atoms; and wherein at least one of R 1 , R 2 , R 3 and R 4 is H; and (f) contacting said planarizing layer with an oxygen-containing plasma so as to preferentially remove portions thereof.
Claim 3
Dependent Claim
25 words
The method of claim 1 wherein said developed resist is exposed to a UV light source prior to contacting said resist with said silicon-containing compound.
Claim 4
Dependent Claim
21 words
The method of claim 1 wherein said silicon-containing compound is selected from the group consisting of dichloromethylsilane, bis(dimethylamino)methylsilane, and dimethylamino chloromethylsilane.
Claim 5
Dependent Claim
19 words
The method of claim 1 wherein said resist has a glass transition temperature of less than about 75° C.
Claim 6
Dependent Claim
12 words
The method of claim 1 wherein said resist comprises a novolac resin.
Claim 7
Dependent Claim
20 words
The method of claim 1 wherein portions of said planarizing layer are preferentially removed by an oxygen reactive ion etch.
Claim 8
Independent Claim
105 words
A method for producing a patterned high resolution, thermally and dimensionally stable resist image on a substrate comprising the steps of: (a) forming a planarizing layer resistant to silicon uptake on a substrate, (b) providing a positive-working photoresist composition containing --OH or --NH-- groups over said planarizing layer, (c) imagewise exposing said resist to activating radiation, (d) developing said exposed resist, (e) contacting said developed resist with a vapor comprising dimethylamino chlorodimethylsilane for a time less than 2 hours to effect silylation thereof and thereby impart etch resistance, and (f) contacting said planarizing layer with an oxygen-containing plasma so as to preferentially remove portions thereof.
Claim 9
Independent Claim
105 words
A method for producing a patterned high resolution, thermally and dimensionally stable resist image on a substrate comprising the steps of: (a) forming a planarizing layer resistant to silicon uptake on a substrate, (b) providing a positive-working photoresist composition containing --OH or --NH-- groups over said planarizing layer, (c) imagewise exposing said resist to activating radiation, (d) developing said exposed resist, (e) contacting said developed resist with a vapor comprising dimethylamino chlorodimethylsilane for a time less than 2 hours to effect silylation thereof and thereby impart etch resistance, and (f) contacting said planarizing layer with an oxygen-containing plasma so as to preferentially remove portions thereof.
References Cited (Backward Citations)
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US4521274A
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US4782008A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-06-04 | 1993-12-04 | 1994-06-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-04 | 1997-12-04 | 1998-06-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-04 | 2001-12-04 | 2002-06-05 | $7700.00 | Window Closed / Lapsed |