Rugged lateral DMOS transistor structure

Claim 2

A DMOS transistor having source, body, gate and drain regions arrayed laterally on the surface of a semiconductor, said transistor comprising: a substrate having a first conductivity type; an epitaxial layer of semiconductor material having said first conductivity type and a doping level less than that of said substrate deposited on said substrate to a first thickness; a body contact region having said first conductivity type and extending from said epitaxial layer surface part way therethrough to form an ohmic contact; a source region having a conductivity type opposite to said first conductivity type abutting said body contact region along one edge and extending from said epitaxial layer into said epitaxial layer with the opposite edge of said source region facing said body contact region of said DMOS transistor: a body region having said first conductivity type in said epitaxial layer and in contact with said source region; a drain region, spaced laterally from and facing said source region and having said opposite conductivity type, extending from said epitaxial layer surface into said epitaxial layer to a second thickness that is less than said first thickness by an amount that creates a drain depletion region reachthrough breakdown voltage, associated with reverse drain bias, at a voltage level below that of an avalanche breakdown voltage of said drain electrode; and a gate region extending from said source region to said drain region; wherein said drain region includes a region doped with impurities of said first conductivity type, said drain region having a concave shaped portion at a surface thereof facing said substrate to control the behavior of said drain depletion region under reverse bias conditions.

Claim 3

The transistor of claim 1 wherein the gate comprises: a conductive layer spaced from said epitaxial layer surface by a thin gate oxide layer, having a first edge in register with said source region, and having a second edge located in register with said drain region.

Claim 4

The transistor of claim 2 wherein said drain region is composed of a first moderately doped portion having said second thickness and a second adjacent lightly doped portion extending to said conductive layer so as to locate said drain region in registry with said second edge thereof.

Claim 5

The transistor of claim 1 wherein said substrate and epitaxial layer are P type silicon, said source and drain regions are N type silicon, and said gate is conductive polysilicon.

Claim 6

The transistor of claim 1 wherein said substrate and epitaxial layers are N type, said source and drain are P type silicon, and said gate is conductive polysilicon.

Claim 7

A DMOS transistor having source, body, gate and drain regions arrayed laterally on the surface of a semiconductor, said transistor comprising: a substrate having a first conductivity type; an epitaxial layer of semiconductor material having said first conductivity type and a doping level less than that of said substrate deposited on said substrate to a first thickness; a body contact region having said first conductivity type and extending from said epitaxial layer surface part way therethrough to form an ohmic contact; a source region having a conductivity type opposite to said first conductivity type abutting said body contact region along one edge and extending from said epitaxial layer into said epitaxial layer with the opposite edge of said source region facing said body contact region of said DMOS transistor; a body region having said first conductivity type in said epitaxial layer and in contact with said source region; a drain region, spaced laterally from and facing said source region and having said opposite conductivity type, extending from said epitaxial layer surface into said epitaxial layer to a second thickness that is less than said first thickness by an amount that creates a drain depletion region reachthrough breakdown voltage, associated with reverse drain bias, at a voltage level below that of the avalanche breakdown voltage of said drain electrode; and a gate region extending from said source region to said drain region; wherein said drain region includes a region doped with impurities of said opposite conductivity type, said region having a doping level higher than that of a remainder of said drain region and not extending to said epitaxial layer surface, to control the behavior of its depletion region under reverse bias conditions.

Claim 8

A DMOS transistor having source, body, gate and drain regions arrayed laterally on the surface of a semiconductor, said transistor comprising: a substrate having a first conductivity type; an epitaxial layer of semiconductor material having said first conductivity type and a doping level less than that of said substrate deposited on said substrate to a first thickness; a body contact region having said first conductivity type and extending from said epitaxial layer surface part way therethrough to form an ohmic contact; a source region having a conductivity type opposite to said first conductivity type abutting said body contact region along one edge and extending from said epitaxial layer into said epitaxial layer with the opposite edge of said source region facing said body contact region of said DMOS transistor; a body region having said first conductivity type in said epitaxial layer and in contact with said source region; a drain region, spaced laterally from and facing said source region and having said opposite conductivity type, extending from said epitaxial layer surface into said epitaxial layer to a second thickness that is less than said first thickness by an amount that creates a drain depletion region reachthrough breakdown voltage, associated with reverse drain bias, at a voltage level below that of the avalanche breakdown voltage of said drain electrode; and a gate region extending from said source region to said drain region; wherein said drain region includes a region doped with impurities of said opposite conductivity type, said region having a doping level higher than that of a remainder of said drain region and not extending to said epitaxial layer surface, to control the behavior of its depletion region under reverse bias conditions.

Claim 9

A DMOS transistor having source, body, gate and drain regions arrayed laterally on the surface of a semiconductor, said transistor comprising: a substrate having a first conductivity type; an epitaxial layer of semiconductor material having said first conductivity type and a doping level less than that of said substrate deposited on said substrate to a first thickness; a body contact region having said first conductivity type and extending from said epitaxial layer surface part way therethrough to form an ohmic contact; a source region having a conductivity type opposite to said first conductivity type abutting said body contact region along one edge and extending from said epitaxial layer into said epitaxial layer with the opposite edge of said source region facing said body contact region of said DMOS transistor; a body region having said first conductivity type in said epitaxial layer and in contact with said source region; a drain region, spaced laterally from and facing said source region and having said opposite conductivity type, extending from said epitaxial layer surface into said epitaxial layer to a second thickness that is less than said first thickness by an amount that creates a drain depletion region reachthrough breakdown voltage, associated with reverse drain bias, at a voltage level below that of the avalanche breakdown voltage of said drain electrode; and a gate region extending from said source region to said drain region; a conductive layer spaced from said epitaxial layer surface by a thin gate oxide layer, having a first edge in register with said source region, and having a second edge located in register with said drain region; wherein the gate comprises a conductive layer spaced from said epitaxial layer surface by a thin gate oxide layer, having a first edge in register with said source region, and having a second edge located in register with said drain region; wherein said drain region is composed of a first moderately doped portion having said second thickness and a second adjacent lightly doped portion extending to said conductive layer so as to locate said drain region in registry with said second edge thereof; and wherein said drain region further includes a third portion of doping buried in said epitaxial layer and located to control said reachthrough breakdown voltage, said third portion being more heavily doped than the first portion of said drain region.

Claim 10

A DMOS transistor having source, body, gate and drain regions arrayed laterally on the surface of a semiconductor, said transistor comprising: a substrate having a first conductivity type; an epitaxial layer of semiconductor material having said first conductivity type and a doping level less than that of said substrate deposited on said substrate to a first thickness; a body contact region having said first conductivity type and extending from said epitaxial layer surface part way therethrough to form an ohmic contact; a source region having a conductivity type opposite to said first conductivity type abutting said body contact region along one edge and extending from said epitaxial layer into said epitaxial layer with the opposite edge of said source region facing said body contact region of said DMOS transistor; a body region having said first conductivity type in said epitaxial layer and in contact with said source region; a drain region, spaced laterally from and facing said source region and having said opposite conductivity type, extending from said epitaxial layer surface into said epitaxial layer to a second thickness that is less than said first thickness by an amount that creates a drain depletion region reachthrough breakdown voltage, associated with reverse drain bias, at a voltage level below that of the avalanche breakdown voltage of said drain electrode; and a gate region extending from said source region to said drain region; a conductive layer spaced from said epitaxial layer surface by a thin gate oxide layer, having a first edge in register with said source region, and having a second edge located in register with said drain region; wherein the gate comprises a conductive layer spaced from said epitaxial layer surface by a thin gate oxide layer, having a first edge in register with said source region, and having a second edge located in register with said drain region; wherein said drain region is composed of a first moderately doped portion having said second thickness and a second adjacent lightly doped portion extending to said conductive layer so as to locate said drain region in registry with said second edge thereof; and wherein said drain region further includes a third portion of doping buried in said epitaxial layer and located to control said reachthrough breakdown voltage, said third portion being more heavily doped than the first portion of said drain region.

Claim 11

A DMOS transistor having source, body, gate and drain regions arrayed laterally on the surface of a semiconductor, said transistor comprising: a substrate having a first conductivity type; an epitaxial layer of semiconductor material having said first conductivity type and a doping level less than that of said substrate deposited on said substrate to a first thickness; a body contact region having said first conductivity type and extending from said epitaxial layer surface part way therethrough to form an ohmic contact; a source region having a conductivity type opposite to said first conductivity type abutting said body contact region along one edge and extending from said epitaxial layer surface into said epitaxial layer with the opposite edge of said source region facing said body contact region of said DMOS transistor; a body region having said first conductivity type in said epitaxial layer and in contact with said source region; a drain region, spaced laterally from and facing said source region and having said opposite conductivity type, extending from said epitaxial layer surface into said epitaxial layer to a second thickness that is less than said first thickness; and a gate region extending from said source region to said drain region; wherein a high conductivity buried layer, having said first conductivity type, extends in said epitaxial layer to electrically contact at a lower edge of said buried layer said substrate and to join said substrate to said body contact regions and has a side edge that confronts said drain region at a distance so as to control a reachthrough breakdown voltage at a voltage level below that of an avalanche breakdown voltage of said drain electrode.

Claim 12

A DMOS transistor having source, body, gate and drain regions arrayed laterally on the surface of a semiconductor, said transistor comprising: a substrate having a first conductivity type; an epitaxial layer of semiconductor material having said first conductivity type and a doping level less than that of said substrate deposited on said substrate to a first thickness; a body contact region having said first conductivity type and extending from said epitaxial layer surface part way therethrough to form an ohmic contact; a source region having a conductivity type opposite to said first conductivity type abutting said body contact region along one edge and extending from said epitaxial layer surface into said epitaxial layer with the opposite edge of said source region facing said body contact region of said DMOS transistor; a body region having said first conductivity type in said epitaxial layer and in contact with said source region; a drain region, spaced laterally from and facing said source region and having said opposite conductivity type, extending from said epitaxial layer surface into said epitaxial layer to a second thickness that is less than said first thickness; and a gate region extending from said source region to said drain region; wherein a high conductivity buried layer, having said first conductivity type, extends in said epitaxial layer to electrically contact at a lower edge of said buried layer said substrate and to join said substrate to said body contact regions and has a side edge that confronts said drain region at a distance so as to control a reachthrough breakdown voltage at a voltage level below that of an avalanche breakdown voltage of said drain electrode.