Vertical type MOS transistor and its chip

Claim 2

A vertical type MOSFET comprising: a first conductivity type drain region formed on a substrate; a first well region of a second conductivity type formed within the drain region; a source region of the first conductivity type formed within the first well region so as to define a gate-controlled channel between the drain region and the source region, the source region, the first well region and the drain region forming a transistor cell; a second well region of the second conductivity type having a higher impurity concentration than that of the first well region formed within the drain region along a peripheral portion of the transistor cell, the second well region being electrically connected to the source region, the second well region and the drain region forming a zener diode section which is provided electrically in parallel to the transistor cell; wherein the transistor cell forms a power MOS section of comb shape and the zener diode section is formed at a gap in the comb shape which is not occupied by the power MOS section; and wherein an electrical current flows through the zener diode section rather than through the transistor cell when a surge voltage is applied to the MOSFET.

Claim 3

A vertical type MOSFET comprising: a substrate comprising first and second layers, the first layer comprising a first conductivity type drain region and having a major surface thereon, and the second layer having the same conductivity type as and a higher impurity concentration than that of the first layer; a first well region of a second conductivity type formed within the drain region at the major surface; a source region of the first conductivity type formed within the first well region so as to define a gate-controlled channel between the drain region and the source region at the major surface, the source region, the first well region and the drain region forming a transistor cell; a second well region of the second conductivity type having an impurity concentration equal to or higher than that of the first well region and formed within the drain along a peripheral portion of the transistor cell to contact with the second layer of the substrate; the second well region being electrically connected in parallel to the source region, the second well region and the second layer of the substrate forming a zener diode section which is provided electrically in parallel to the transistor cell; wherein the transistor cell forms a power MOS section of comb shape and the zener diode section is formed at a gap in the comb shape which is not occupied by the power MOS section; and wherein an electrical current flows through the zener diode section rather than through the transistor cell when a surge voltage is applied to the MOSFET.

Claim 4

A vertical type MOSFET comprising: a substrate comprising first and second layers, the first layer comprising a first conductivity type drain region and having a major surface thereon, and the second layer having the same conductivity type as and a higher impurity concentration than that of the first layer; a first well region of a second conductivity type formed within the drain region at the major surface; a source region of the first conductivity type formed within the first well region so as to define a gate-controlled channel between the drain region and the source region at the major surface, the source region, the first well region and the drain region forming a transistor cell; a second well region of the second conductivity type having an impurity concentration equal to or higher than that of the first well region and formed within the drain along a peripheral portion of the transistor cell to contact with the second layer of the substrate; the second well region being electrically connected in parallel to the source region, the second well region and the second layer of the substrate forming a zener diode section which is provided electrically in parallel to the transistor cell; wherein the transistor cell forms a power MOS section of comb shape and the zener diode section is formed at a gap in the comb shape which is not occupied by the power MOS section; and wherein an electrical current flows through the zener diode section rather than through the transistor cell when a surge voltage is applied to the MOSFET.

Claim 5

A vertical type MOSFET comprising: a substrate having a first layer with a major surface thereon and a second layer having the same conductivity type as and a higher impurity concentration than that of the first layer a portion of the first and second layers comprising a drain region; a first well region of a second conductivity type formed within the first layer to contact with the second layer; a source region of the first conductivity type formed within the first well region so as to define a gate-controlled channel between the drain region and the source region at the major surface, the source region, the first well region and the drain region forming a transistor cell, a second well region of the second conductivity type having an impurity concentration equal to or higher than that of the first well region and formed within the first layer adjacent to the transistor cell to contact with the second layer, the second well region being electrically connected to the source region and the second well region and the second layer of the substrate forming a zener diode section which is positioned in parallel to the transistor cell across the substrate; wherein the transistor cell forms a power MOS section of comb shape and the zener diode section is formed at a gap in the comb shape which is not occupied by the power MOS section and the MOSFET has an improved surge current capacity.

Claim 6

A vertical type MOSFET comprising: a substrate having a first layer with a major surface thereon and a second layer having the same conductivity type as and a higher impurity concentration than that of the first layer a portion of the first and second layers comprising a drain region; a first well region of a second conductivity type formed within the first layer to contact with the second layer; a source region of the first conductivity type formed within the first well region so as to define a gate-controlled channel between the drain region and the source region at the major surface, the source region, the first well region and the drain region forming a transistor cell, a second well region of the second conductivity type having an impurity concentration equal to or higher than that of the first well region and formed within the first layer adjacent to the transistor cell to contact with the second layer, the second well region being electrically connected to the source region and the second well region and the second layer of the substrate forming a zener diode section which is positioned in parallel to the transistor cell across the substrate; wherein the transistor cell forms a power MOS section of comb shape and the zener diode section is formed at a gap in the comb shape which is not occupied by the power MOS section and the MOSFET has an improved surge current capacity.