US4925829A
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Method for preparing thin film of compound oxide superconductor by ion beam techniques
Assignee: Sumitomo Electric Industries Ltd
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Filing: 1988-05-25
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Granted: 1990-05-15
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Expires: 2008-05-25
Abstract
Abstract A method for preparing a thin film of a composite copper oxide superconductor with a deposition source of the compound copper oxide, by applying an oxygen ion beam from an ion source onto a substrate while changing beam intensity during formation of the superconducting thin film, thereby to physically deposit evaporative particles from the deposition source on the substrate.
Inventors
- 👤 Nobuhiko Fujita
- 👤 Hideo Itozaki
- 👤 Saburo Tanaka
- 👤 Shuji Yazu
- 👤 Tetsuji Jodai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 21:52
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/80; H10N60/85; H10N60/855; H10N60/857; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0381; H10N60/0576; H10N60/0604; H10N60/0884; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/73; Y10S505/731; Y10S505/732
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
64 words
In a method for preparing a thin film of superconductor composed of a compound copper oxide on a substrate employing a physical vapor deposition technique, the improvement which comprises irradiating the substrate on which evaporated particles from a vapor source are deposited with an oxygen ion beam the intensity of which is varied in time while the evaporated particles are deposited on the substrate.
Claim 2
Dependent Claim
64 words
In a method for preparing a thin film of superconductor composed of a compound copper oxide on a substrate employing a physical vapor deposition technique, the improvement which comprises irradiating the substrate on which evaporated particles from a vapor source are deposited with an oxygen ion beam the intensity of which is varied in time while the evaporated particles are deposited on the substrate.
Claim 3
Dependent Claim
20 words
A method in accordance with claim 1, wherein said oxygen ion beam is composed of O and/or O 2 ions.
Claim 4
Dependent Claim
24 words
A method in accordance with claim 1, wherein said ion beam is produced by an ion source provided with a differentially exhaustible evacuation means.
Claim 5
Dependent Claim
20 words
A method in accordance with claim 1, wherein said ion beam is produced by a cold cathode type ion source.
Claim 6
Dependent Claim
34 words
A method in accordance with claim 1, comprising the further step of flowing oxygen gas through the source of oxygen ions at a pressure ranging from 1.7 to 10 -5 to 8.3×10 -3 Torr.
Claim 7
Dependent Claim
31 words
A method in accordance with claim 1, wherein said ion beam is produced by an ion source which is actuated at a discharge voltage ranging from 0.5 kV to 10 kV.
Claim 8
Dependent Claim
24 words
A method in accordance with claim 1, wherein said ion beam is accelerated under a acceleration potential ranging from 50 V to 40 kV.
Claim 9
Dependent Claim
28 words
A method in accordance with claim 1, wherein said substrate is heated to a temperature ranging from 230° to 1,410° C. during the deposition of evaporated particles thereon.
Claim 10
Dependent Claim
33 words
A method in accordance with claim 1, wherein the physical vapor deposition is carried out in an atmosphere containing oxygen gas having a partial pressure ranging from 1.0×10 -8 to 1.0×10 -2 Torr.
Claim 11
Dependent Claim
19 words
A method in accordance with claim 1, wherein said substrate is a monocrystal of MgO or SrTiO 3 .
Claim 12
Dependent Claim
20 words
A method in accordance with claim 10, wherein the evaporated particles are deposited on a (001) plane of said monocrystal.
Claim 13
Dependent Claim
20 words
A method in accordance with claim 10, wherein the evaporated particles are deposited on a (110) plane of said monocrystal.
Claim 14
Dependent Claim
82 words
A method in accordance with claim 1, wherein said thin film obtained is composed of a compound copper oxide having a composition represented by the general formula: (α.sub.1-x β.sub.x) [γ]Cu.sub.y O.sub.z in which α stands for an element selected from group IIa of the periodic table, β stands for an element selected from group IIIa of the periodic table, x is the atomic ratio of β with respect to (α+β) and is 0.1≦x≦0.9 and y and z satisfy 0.4≦y≦3.0 and 1≦z≦5 respectively.
Claim 15
Dependent Claim
56 words
A method in accordance with claim 1, wherein said thin film obtained is composed of a compound oxide having a composition represented by the general formula: LnBa.sub.2 Cu.sub.3 O.sub.7-x in which Ln is at least one element selected from a group comprising Y, La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm and Yb, and 0≦x<1.
Claim 16
Dependent Claim
33 words
A method in accordance with claim 1, wherein said thin film is a compound oxide represented by the general formula: (La.sub.1-x M.sub.x).sub.2 CuO.sub.4 in which M stands for Ba or La, and 0<x<1.
Claim 17
Dependent Claim
55 words
A method in accordance with claim 1, wherein said thin film is a compound oxide represented by the general formula: θ.sub.4 (Φ.sub.1-q,Ca.sub.q).sub.m Cu.sub.n O.sub.p+r in which θ stands for Bi or Tl, φ stands for Sr when θ is Bi and stands for Ba when θ is Tl, 6≦m≦10 and 4≦n≦8, p=(6+m+n), 0<q<1, and -2≦r≦+2.
Claim 18
Dependent Claim
25 words
A method in accordance with claim 16, wherein said thin film obtained is a compound oxide having a composition: Bi.sub.4 Sr.sub.4 Ca.sub.4 Cu.sub.6 O.sub.20+r -2≦r≦+2.
Claim 19
Dependent Claim
25 words
A method in accordance with claim 16, wherein said thin film obtained is a compound oxide having a composition: Tl.sub.4 Ba.sub.4 Ca.sub.4 Cu.sub.6 O.sub.20+r -2≦r≦+2.
Claim 20
Dependent Claim
127 words
In a method for preparing a thin film of a compound copper oxide superconductor on a substrate by depositing particles evaporated from a vapor source composed of constituent elements of the compound copper oxide employing a physical vapor deposition technique, the improvement which comprises irradiating said substrate on which the evaporated particles are deposited with an oxygen ion beam the intensity of which is varied over time under an acceleration potential ranging from 50 V to 40 kV, while the evaporated particles are deposited on the substrate in an atmosphere containing oxygen gas having a partial pressure between 1.0×10 -8 and 1.0×10 -2 Torr, and in that said substrate is heated to a temperature between 230° and 1,410° C. during the deposition of the evaporated particles thereon.
Claim 21
Dependent Claim
127 words
In a method for preparing a thin film of a compound copper oxide superconductor on a substrate by depositing particles evaporated from a vapor source composed of constituent elements of the compound copper oxide employing a physical vapor deposition technique, the improvement which comprises irradiating said substrate on which the evaporated particles are deposited with an oxygen ion beam the intensity of which is varied over time under an acceleration potential ranging from 50 V to 40 kV, while the evaporated particles are deposited on the substrate in an atmosphere containing oxygen gas having a partial pressure between 1.0×10 -8 and 1.0×10 -2 Torr, and in that said substrate is heated to a temperature between 230° and 1,410° C. during the deposition of the evaporated particles thereon.
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FR2602246A1
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EP0285132A2
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EP0288001A2
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US4861750A
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EP0292387A2
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-05-14 | 1993-11-13 | 1994-05-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-05-14 | 1997-11-13 | 1998-05-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-05-14 | 2001-11-13 | 2002-05-15 | $7700.00 | Window Closed / Lapsed |