Forming method for titanium dioxide by normal temperature reaction evaporation

Abstract

Abstract PURPOSE:To evaporate TiO2 film on the substrate reacting in a short operating time without regarding to the material of the substrate, by sending out Ti or Ti oxide in the substrate direction irradiating oxygen ion beam on the substrate without heating the substrate at a high temperature. CONSTITUTION:For example, the substrate 4 made of plastics, is maintained by the dome 5 in the vacuum vessel 1. Then, oxygen ion beam is irradiated on the substrate 4 by ionizing oxygen gas from the oxygen gas source 2 by the cold cathode type ion source 3 and also, evaporation substance of TiO2 is evaporated by the electron beam 8 and then, non-absorption TiO2 film is evaporated on the normal temperature substrate 4. By the above method, film forming time is able to shorten because heating time of the substrate and cooling time of substrate after evaporation, is unnecessary.

Inventors

• 👤 Tatsuhiko Sawaguchi

Bibliographic Details