Patent US4925701A successfully refreshed from Google Patents.
US4925701A
Expired / Lapsed
US
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Processes for the preparation of polycrystalline diamond films
Assignee: Xerox Corp
•
Filing: 1988-05-27
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Granted: 1990-05-15
•
Expires: 2008-05-27
Abstract
Abstract A process for the preparation of continuous polycrystalline diamond films which comprises applying to a substrate diamond powder in an amount of from about one particle per ten square microns to about 10 particles per square micron with an average particle diameter of from about 0.1 to about 0.4 micron; heating the resulting powdered substrate subsequent to incorporation in a processing apparatus; introducing a mixture of gases into the chamber, which gases provide a supply of carbon and hydrogen; and decomposing the gas mixture.
Inventors
- 👤 Frank Jansen
- 👤 Mary A. Machonkin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 21:19
CPC Classifications
H; H10; H10W; H10W99/00; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/22; C23C16/26; C23C16/27; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/02; C30B29/04
Claims Analysis
Total Claims: 59
Claim 1
Independent Claim
84 words
A process for the preparation of continuous polycrystalline diamond films which comprises applying to a substrate diamond powder in an amount of from about one particle per ten square microns to about 10 particles per square micron with an average particle diameter of from about 0.1 to about 0.4 micron; heating the resulting powdered substrate subsequent to incorporation in a processing apparatus; introducing a mixture of gases into the apparatus, which gases provide a supply of carbon and hydrogen; and decomposing the gas mixture.
Claim 2
Dependent Claim
84 words
A process for the preparation of continuous polycrystalline diamond films which comprises applying to a substrate diamond powder in an amount of from about one particle per ten square microns to about 10 particles per square micron with an average particle diameter of from about 0.1 to about 0.4 micron; heating the resulting powdered substrate subsequent to incorporation in a processing apparatus; introducing a mixture of gases into the apparatus, which gases provide a supply of carbon and hydrogen; and decomposing the gas mixture.
Claim 3
Dependent Claim
14 words
A process in accordance with claim 1 wherein the substrate is a semiconductive wafer.
Claim 4
Dependent Claim
18 words
A process in accordance with claim 1 wherein the substrate is a semiconductive wafer with microelectronic circuitry thereon.
Claim 5
Dependent Claim
14 words
A process in accordance with claim 1 wherein the substrate is a tool bit.
Claim 6
Dependent Claim
14 words
A process in accordance with claim 1 wherein the substrate is a razor blade.
Claim 7
Dependent Claim
14 words
A process in accordance with claim 1 wherein the substrate comprises an optical device.
Claim 8
Dependent Claim
25 words
A process in accordance with claim 1 wherein the diamond powder is applied from a suspension thereof by spin coating, dip coating, or spray coating.
Claim 9
Dependent Claim
15 words
A process in accordance with claim 1 wherein the processing apparatus is a deposition chamber.
Claim 10
Dependent Claim
20 words
A process in accordance with claim 1 wherein the diamond powder is applied from a suspension thereof by spray coating.
Claim 11
Dependent Claim
23 words
A process in accordance with claim 1 wherein the diamond powder is applied from a suspension of diamond powder and an aliphatic compound.
Claim 12
Dependent Claim
14 words
A process in accordance with claim 10 wherein the aliphatic compound is an alcohol.
Claim 13
Dependent Claim
11 words
A process in accordance with claim 11 wherein alcohol is isopropanol.
Claim 14
Dependent Claim
22 words
A process in accordance with claim 1 wherein the average diameter of the particle is from about 0.1 to about 0.25 micron.
Claim 15
Dependent Claim
17 words
A process in accordance with claim 1 wherein the powdered substrate is incorporated in a vacuum system.
Claim 16
Dependent Claim
24 words
A process in accordance with claim 1 wherein the powdered substrate is heated at a temperature of from about 600° to about 950° C.
Claim 17
Dependent Claim
34 words
A process in accordance with claim 1 wherein the powdered substrate is exposed to gases comprised of a mixture of carbonaceous gas and hydrogen at a reduced total pressure of less than 500 Torr.
Claim 18
Dependent Claim
22 words
A process in accordance with claim 16 wherein the gas mixture contains from about 0.1 percent to about 5 percent carbonaceous gas.
Claim 19
Dependent Claim
13 words
A process in accordance with claim 17 wherein the carbonaceous gas is methane.
Claim 20
Dependent Claim
14 words
A process in accordance with claim 17 wherein the carbonaceous gas is acetone vapor.
Claim 21
Dependent Claim
14 words
A process in accordance with claim 17 wherein the carbonaceous gas is carbon oxide.
Claim 22
Dependent Claim
17 words
A process in accordance with claim 1 wherein the decomposition of the gases is accomplished by heating.
Claim 23
Dependent Claim
23 words
A process in accordance with claim 21 wherein the decomposition of the gases is accomplished by heating at a temperature exceeding 1,700° C.
Claim 24
Dependent Claim
26 words
A process in accordance with claim 22 wherein the decomposition of the gases is accomplished by heating refractory metal filaments at a temperature exceeding 1,700° C.
Claim 25
Dependent Claim
21 words
A process in accordance with claim 1 wherein the decomposition of the gases is accomplished by the formation of a plasma.
Claim 26
Dependent Claim
22 words
A process in accordance with claim 24 wherein the decomposition of the gases is accomplished by the formation of a microwave plasma.
Claim 27
Dependent Claim
23 words
A process in accordance with claim 24 wherein the decomposition of the gases is accomplished by the formation of a direct current plasma.
Claim 28
Dependent Claim
20 words
A process in accordance with claim 24 wherein the decomposition of the gases is accomplished by a radio frequent plasma.
Claim 29
Dependent Claim
31 words
A process in accordance with claim 1 wherein the powdered diamond layer has an area coverage of about one particle per ten square microns to about one particle per square micron.
Claim 30
Dependent Claim
30 words
A process in accordance with claim 1 wherein the powdered diamond layer has an area coverage of about one particle per square micron to about ten particles per square micron.
Claim 31
Dependent Claim
25 words
A process in accordance with claim 1 wherein the polycrystalline diamond layer is of a thickness of from about 0.1 micron to about 1,000 microns.
Claim 32
Dependent Claim
134 words
A process for the preparation of continuous polycrystalline diamond which comprises applying to a substrate diamond powder in an amount of from about one particle per ten square microns to about 10 particles per square micron with a particle size of from about 0.1 to about 0.4 micron; incorporating the substrate into a deposition system; applying a vacuum of from about 1 mTorr to about 1 Torr; heating the resulting powdered substrate to a temperature of from about 800° to about 900° C.; introducing into the chamber a mixture of gases or vapors comprised of a carbon containing gas and hydrogen; adjusting the total pressure to from about 10 Torr to about 100 Torr; and decomposing the gas mixture whereby polycrystalline diamond is formed on the substrate on nucleation sites provided by the powder.
Claim 33
Dependent Claim
134 words
A process for the preparation of continuous polycrystalline diamond which comprises applying to a substrate diamond powder in an amount of from about one particle per ten square microns to about 10 particles per square micron with a particle size of from about 0.1 to about 0.4 micron; incorporating the substrate into a deposition system; applying a vacuum of from about 1 mTorr to about 1 Torr; heating the resulting powdered substrate to a temperature of from about 800° to about 900° C.; introducing into the chamber a mixture of gases or vapors comprised of a carbon containing gas and hydrogen; adjusting the total pressure to from about 10 Torr to about 100 Torr; and decomposing the gas mixture whereby polycrystalline diamond is formed on the substrate on nucleation sites provided by the powder.
Claim 34
Dependent Claim
14 words
A process in accordance with claim 31 wherein the substrate is a semiconductive wafer.
Claim 35
Dependent Claim
21 words
A process in accordance with claim 31 wherein the diamond powder is applied from a suspension thereof in an aliphatic alcohol.
Claim 36
Dependent Claim
11 words
A process in accordance with claim 32 wherein alcohol is methanol.
Claim 37
Dependent Claim
19 words
A process in accordance with claim 31 wherein the particle size is from about 0.1 to about 0.25 micron.
Claim 38
Dependent Claim
24 words
A process in accordance with claim 31 wherein the powdered substrate is heated at a temperature of from about 800° to about 850° C.
Claim 39
Dependent Claim
19 words
A process in accordance with claim 31 wherein the gases are comprised of a mixture of methane and hydrogen.
Claim 40
Dependent Claim
23 words
A process in accordance with claim 37 wherein the gas mixture contains from about 0.05 percent to about 5 percent carbon containing gas.
Claim 41
Dependent Claim
17 words
A process in accordance with claim 31 wherein the decomposition of the gases is accomplished by heating.
Claim 42
Dependent Claim
25 words
A process in accordance with claim 39 wherein the decomposition of the gases is accomplished by heating at a temperature of up to 2,000° C.
Claim 43
Dependent Claim
21 words
A process in accordance with claim 31 wherein the decomposition of the gases is accomplished by the formation of a plasma.
Claim 44
Dependent Claim
23 words
A process in accordance with claim 32 wherein the substrate is of a thickness of from about 100 microns to about 1,000 microns.
Claim 45
Dependent Claim
25 words
A process in accordance with claim 31 wherein the polycrystalline diamond layer is of a thickness of from about 1 micron to about 1,000 microns.
Claim 46
Dependent Claim
27 words
A process in accordance with claim 31 wherein the polycrystalline diamond film is deposited at a rate of from about 0.1 to about 1 micron per hour.
Claim 47
Dependent Claim
23 words
A process in accordance with claim 1 wherein there results, subsequent to removal from the chamber, substantially pure polycrystalline diamond on the substrate.
Claim 48
Dependent Claim
23 words
A process in accordance with claim 31 wherein there results, subsequent to removal from the chamber, substantially pure polycrystalline diamond on the substrate.
Claim 49
Dependent Claim
28 words
A process in accordance with claim 1 wherein the powdered diamond is applied from a suspension thereof in alcohol, which suspension is formulated by mixing and ultrasonic vibrations.
Claim 50
Dependent Claim
28 words
A process in accordance with claim 31 wherein the powdered diamond is applied from a suspension thereof in alcohol, which suspension is formulated by mixing and ultrasonic vibrations.
Claim 51
Dependent Claim
18 words
A process in accordance with claim 1 wherein the decomposition is accomplished with heated refractory metal filament wires.
Claim 52
Dependent Claim
18 words
A process in accordance with claim 31 wherein the decomposition is accomplished with heated refractory metal filament wires.
Claim 53
Dependent Claim
31 words
A process in accordance with claim 2 wherein the powdered diamond layer has an area coverage of about one particle per ten square microns to about one particle per square micron.
Claim 54
Dependent Claim
30 words
A process in accordance with claim 2 wherein the powdered diamond layer has an area coverage of about one particle per square micron to about ten particles per square micron.
Claim 55
Dependent Claim
25 words
A process in accordance with claim 2 wherein the polycrystalline diamond layer is of a thickness of from about 0.1 micron to about 1,000 microns.
Claim 56
Dependent Claim
31 words
A process in accordance with claim 1 wherein the powdered diamond layer has an area coverage of from about 5 particles per square micron to about 10 particles per square micron.
Claim 57
Dependent Claim
31 words
A process in accordance with claim 31 wherein the powdered diamond layer has an area coverage of from about 5 particles per square micron to about 10 particles per square micron.
Claim 58
Dependent Claim
29 words
A process in accordance with claim 1 wherein the gas mixture contains a carbon containing gas in an amount of from about 0.1 to about 2 percent by volume.
Claim 59
Dependent Claim
29 words
A process in accordance with claim 31 wherein the gas mixture contains a carbon containing gas in an amount of from about 0.1 to about 2 percent by volume.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-05-14 | 1993-11-13 | 1994-05-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-05-14 | 1997-11-13 | 1998-05-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-05-14 | 2001-11-13 | 2002-05-15 | $7700.00 | Window Closed / Lapsed |