Circuit protection device

Claim 2

A circuit protection device for protecting an electrical circuit from a voltage transient which comprises: a threshold switching element that will change from a high resistance state to a low resistance state on application of a voltage, but will remain in its low resistance state only for as long as a small holding current is maintained through the element, the switching element being formed from an amorphous composition comprising: (a) from 10 to 65 atomic percent arsenic; (b) from 15 to 90 atomic percent sulfur; and (c) up to 40 atomic percent germanium; in which the proportions of (a), (b) and (c) (based on the total molar quantity of (a), (b) and (c) add up to 100% the composition having not more than 10 atomic percent tellurium (based on the total molar quantity of the composition); and a pair of electrodes in contact with the composition.

Claim 3

A device as claimed in claim 1, wherein the switching element is formed from a composition comprising: (a) from 3 to 30 atomic percent germanium; (b) from 10 to 65 atomic percent arsenic; and (c) from 30 to 80 atomic percent sulphur, in which the proportions of (a), (b) and (c) based on the total quantity of (a), (b) and (c) add up to 100%.

Claim 4

A device as claimed in claim 2, wherein the switching element is formed from a composition comprising: (a) from 3 to 30 atomic percent germanium, (b) from 10 to 50 atomic percent arsenic; and (c) from 40 to 70 atomic percent sulphur.

Claim 5

A device as claimed in claim 1, which exhibits an energy to latch of at least 40 mJ.

Claim 6

A device as claimed in claim 1, which has an electrode-to-electrode resistance of not more than 1 ohm in its low resistance state.

Claim 7

A device as claimed in claim 1, wherein the composition contains indium and/or the switching element includes an interlayer comprising indium between the composition and at least one of the electrodes in order to reduce the electrical resistance of the device in its low resistance state.

Claim 8

An electrical circuit which comprises a circuit protection device comprising: (1) a threshold switching element that will change from a high resistance state to a low resistance state on application of a voltage, but will remain in its low resistance state only for as long as a small holding current is maintained through the element, the switching element being formed from an amorphous composition comprising: (a) from 10 to 65 anatomic percent arsenic; (b) from 15 to 90 amtomic percent sulfur; and (c) up to 42 atomic percent germanium; in which the proportions of (a), (b) and (c) (based on the total molar quantity of (a), (b) and (c)) add up to 100%; the composition having not more than 10 atomic percent tellurium (based on the total molar quantity of the composition); and (2) a pair of electrodes in contact with the composition; the circuit protection device being electrically connected between a current carrying line of the circuit and earth.

Claim 9

An electrical circuit which comprises a circuit protection device comprising: (1) a threshold switching element that will change from a high resistance state to a low resistance state on application of a voltage, but will remain in its low resistance state only for as long as a small holding current is maintained through the element, the switching element being formed from an amorphous composition comprising: (a) from 10 to 65 anatomic percent arsenic; (b) from 15 to 90 amtomic percent sulfur; and (c) up to 42 atomic percent germanium; in which the proportions of (a), (b) and (c) (based on the total molar quantity of (a), (b) and (c)) add up to 100%; the composition having not more than 10 atomic percent tellurium (based on the total molar quantity of the composition); and (2) a pair of electrodes in contact with the composition; the circuit protection device being electrically connected between a current carrying line of the circuit and earth.