Solid state amplifier device and circuit therefor

Claim 2

A solid state current control device comprising: contiguous interfacing layers of material of alternating conductivity type to form one of a pnp and npn device transistor-like device with emitter, base and collector layer with transistor junctions at their interfaces in the order named, terminal-forming layers for making electrical connection to the emitter and collector layers and terminal means for making electrical connection to said base layer, at least one of the emitter and collector layers being made of a switch material which, when a voltage above a given threshold value is applied to opposite sides thereof, switches from a relatively non-conductive state to a relatively conductive state which is of an opposite conductivity type to that of the base layer at least in the conductive state thereof, substantially decreases from the threshold value when a finite resistance is connected in series therewith, the collector layer being of a material which collects electrical charge carriers directed thereto through the base layer, and said base layer always being of sufficiently high resistance not to short circuit the junction between it and the adjacent layers and being of a thinness to be less than the diffusion length of electrical charge carriers therethrough so the majority carriers of the emitter layer are not substantially neutralized or trapped before reaching the junction between the base and collector layers.

Claim 3

The solid state current control device of claim 1 wherein said at least one layer is the emitter forming layer.

Claim 4

The solid state current control device of claim 1 wherein said base and collector layers are also formed of a switch material which, when a voltage above a given threshold value is applied to opposite sides thereof, switches from a relatively non-conductive state to a relatively conductive state and the voltage thereacross substantially decreases from said threshold value when a finite resistance is connected in series therewith.

Claim 5

The solid state control device of claim 1 wherein two contiguous ones of said layers are extrinsic semiconductor materials.

Claim 6

The solid state current control device of claim 1 wherein said base layer is an extrinsic semiconductor material.

Claim 7

The solid state current control device of clam 1 combined with voltage source means coupled to the emitter, base and collector layers of the device for biasing the emitter-collector junction to provide for the movement of the majority charge carriers of the emitter to the emitter-base layer junction, and to provide at the base and collector junction of the device a voltage which accelerates thereto the majority charge carriers supplied by said emitter layer.

Claim 8

The solid state current control device of clam 1 combined with voltage source means coupled to the emitter, base and collector layers of the device for biasing the emitter-collector junction to provide for the movement of the majority charge carriers of the emitter to the emitter-base layer junction, and to provide at the base and collector junction of the device a voltage which accelerates thereto the majority charge carriers supplied by said emitter layer.

Claim 9

The solid state current control device of claim 1 wherein said emitter, base and collector layers are amorphous radiation hard materials.

Claim 10

The combination of claim 6 wherein said voltage source means supply a DC voltage which causes the said switch material layer to switch to said conductive state so it normally operates in said operative state.

Claim 11

The combination of claim 6 combined with a solid state electronic control device comprising load impedance means and circuit-forming means interconnecting said voltage sources, and emitter, base and collector layers of the current control device for forming one of a common base, common emitter and emitter follower circuit configuration.

Claim 12

The combination of claim 9 wherein all of said layers are formed of a switch material which, when a voltage above a given threshold value is applied to opposite sides thereof, switches from a relatively non-conductive state to an relatively conductive state and the voltage thereacross substantially decreases from the threshold value when a finite resistance is connected in series therethrough, and the magnitude of the output of said voltage source means connected to said layers is sufficient to provide voltage conditions thereat initially in excess of said threshold values thereof to effect operation thereof in said relatively conductive states.

Claim 13

The solid state current control device of claim 1 wherein said switch-forming material is a semiconductor material which, when a voltage in excess of a given threshold voltage is applied thereto, switches the same from a relatively high to a relatively low resistance condition and returns to a high resistance condition when the current flow therethrough drops below a holding current level.

Claim 14

The solid state control device of claim 1 wherein said switch-forming material is a memory semiconductor material which, when a voltage in excess of a given threshold voltage is applied thereto, switches the same from a relatively high to a relatively low resistance condition, which high resistance condition remains even after all sources of voltage and current are disconnected therefrom.

Claim 15

The solid state control device of claim 1 wherein said semiconductor switch material is a chalcogenide semiconductor material.

Claim 16

The combination of claim 6 wherein the circuit defined therein forms a signal amplifier and there is provided a source of signals to be amplified coupled between the emitter and collector-forming layers of said control device which is of an amplitude not to override the effect of said volage source means to maintain said switch material layer in said conductive state.

Claim 17

The solid state current control device of claim 1 wherein only one of said layers is made of said switch material.

Claim 18

The solid state current control device of claim 1 wherein said switch material is a memory switch material which remains in its switched conductive state even after all sources of energy are removed therefrom.

Claim 19

The solid state current control device of claim 1 wherein said switch material is a threshold switch material which remains in its switched conductive state until the current therethrough drops below a given holding current level.

Claim 20

A solid state current control device comprising: contiguous interfacing layers of semiconductor material of alternating conductivity type to form one of a pnp and npn transistor-like device with emitter, base and collector layers with transistor junctions at their interfaces in the order named, the emitter layer being made of a switch material which, when a voltage above a given threshold value is applied to the opposite sides thereof, switches from a relatively non-conductive state to a relatively conductive state which is of an opposite conductivity type of that of the base layer at least in the conductive state thereof, and the voltage thereacross substantially decreases from the threshold value when a finite resistance is connected in series therewith, the collector layer being of a material which collects electrical charge carriers directed thereto through the base layer, and said base layer always being of sufficiently high resistance not to short circuit the junction between it and the adjacent layers and being of a thinness to be less than the diffusion length of electrical charge carriers therethrough so the majority carriers of the emitter layer are not substantially neutralized or trapped before reaching the junction between the base and collector layers, and three device connection points respectively at said contiguous layers of material forming said emitter, base and collector layers for connecting the same to circuit forming elements.

Claim 21

A solid state current control device comprising: contiguous interfacing layers of semiconductor material of alternating conductivity type to form one of a pnp and npn transistor-like device with emitter, base and collector layers with transistor junctions at their interfaces in the order named, the emitter layer being made of a switch material which, when a voltage above a given threshold value is applied to the opposite sides thereof, switches from a relatively non-conductive state to a relatively conductive state which is of an opposite conductivity type of that of the base layer at least in the conductive state thereof, and the voltage thereacross substantially decreases from the threshold value when a finite resistance is connected in series therewith, the collector layer being of a material which collects electrical charge carriers directed thereto through the base layer, and said base layer always being of sufficiently high resistance not to short circuit the junction between it and the adjacent layers and being of a thinness to be less than the diffusion length of electrical charge carriers therethrough so the majority carriers of the emitter layer are not substantially neutralized or trapped before reaching the junction between the base and collector layers, and three device connection points respectively at said contiguous layers of material forming said emitter, base and collector layers for connecting the same to circuit forming elements.

Claim 22

A solid state current control device comprising: contiguous interfacing layers of semiconductor material of alternating conductivity type to form one of a pnp and npn transistor-like device with emitter, base and collector layers with transistor junctions at their interfaces in the order named, at least said base layer and one of the other layers being respectively made of extrinsic semiconductor material, the emitter layer being made of a switch material which, when a voltage above a given threshold value is applied to opposite sides thereof, switches from a relatively non-conductive state to a relatively conductive state which is of an opposite conductivity type to that of the base layer at least in the conductive state thereof, and the voltage thereacross substantially decreases from the threshold value when a finite resistance is connected in series therewith, and said base layer always being of sufficiently high resistance not to short circuit the junction between it and the adjacent layers and being of a thinness to be less than the diffusion length of electrical charge carriers therethrough so the majority carriers of the emitter layer are not substantially neutralized or trapped before reaching the junction between the base and collector layers, and three device connection points respectively at said contiguous layers of material forming said emitter, base and collector layers for connecting the same to circuit forming elements.

Claim 23

A solid state current control device comprising: contiguous interfacing layers of semiconductor material of alternating conductivity type to form one of a pnp and npn transistor-like device with emitter, base and collector layers with transistor junctions at their interfaces in the order named, at least said base layer and one of the other layers being respectively made of extrinsic semiconductor material, the emitter layer being made of a switch material which, when a voltage above a given threshold value is applied to opposite sides thereof, switches from a relatively non-conductive state to a relatively conductive state which is of an opposite conductivity type to that of the base layer at least in the conductive state thereof, and the voltage thereacross substantially decreases from the threshold value when a finite resistance is connected in series therewith, and said base layer always being of sufficiently high resistance not to short circuit the junction between it and the adjacent layers and being of a thinness to be less than the diffusion length of electrical charge carriers therethrough so the majority carriers of the emitter layer are not substantially neutralized or trapped before reaching the junction between the base and collector layers, and three device connection points respectively at said contiguous layers of material forming said emitter, base and collector layers for connecting the same to circuit forming elements.