Patent US4921722A successfully refreshed from Google Patents.
US4921722A
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Method for forming deposited film
Assignee: Canon Inc
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Filing: 1985-10-11
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Granted: 1990-05-01
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Expires: 2005-10-11
Abstract
Abstract A method for forming a deposited film by forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula SinHm wherein n is an integer of 1 or more, and m is an integer of 2 or more in a chamber housing a substrate therein and forming a deposited film containing silicon on said substrate by excitation of said compound to effect decomposition or polymerization thereof comprises introducing a gaseous radical polymerization initiator into said chamber and utilizing light energy, thereby exciting said compound to effect decomposition or polymerization thereof.
Inventors
- 👤 Yoshiyuki Osada
- 👤 Hisanori Tsuda
- 👤 Masafumi Sano
- 👤 Satoshi Omata
- 👤 Katsuji Takasu
- 👤 Yutaka Hirai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:15
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/448; C23C16/452; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
82 words
A method for forming a deposited film comprising: forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si n H m wherein n is an integer of 1 or more, and m is an integer of 2 or more, in a chamber housing a substrate therein; introducing a gaseous CCl 4 radical polymerization initiator into said chamber and utilizing light energy to thereby excite said compound to effect formation of a deposited film containing silicon on said substrate.
Claim 2
Independent Claim
82 words
A method for forming a deposited film comprising: forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si n H m wherein n is an integer of 1 or more, and m is an integer of 2 or more, in a chamber housing a substrate therein; introducing a gaseous CCl 4 radical polymerization initiator into said chamber and utilizing light energy to thereby excite said compound to effect formation of a deposited film containing silicon on said substrate.
Claim 3
Dependent Claim
24 words
A method according to claim 1, wherein said hydrogenated silicon compound is a chain hydrogenated silicon compound wherein n is 2, 3 or 4.
Claim 4
Dependent Claim
24 words
A method according to claim 1, wherein said hydrogenated silicon compound is a cyclic hydrogenated silicon compound wherein n is 3, 4 or 7.
Claim 5
Independent Claim
82 words
A method for forming a deposited film comprising: forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si n H m wherein n is an integer of 1 or more, and m is an integer of 2 or more, in a chamber housing a substrate therein; introducing a gaseous azo compound radical polymerization initiator into said chamber and utilizing light energy to thereby excite said compound to effect formation of a deposited film containing silicon on said substrate.
Claim 6
Independent Claim
82 words
A method for forming a deposited film comprising: forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si n H m wherein n is an integer of 1 or more, and m is an integer of 2 or more, in a chamber housing a substrate therein; introducing a gaseous azo compound radical polymerization initiator into said chamber and utilizing light energy to thereby excite said compound to effect formation of a deposited film containing silicon on said substrate.
Claim 7
Independent Claim
120 words
A method for forming a deposited film comprising: forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si n H m wherein n is an integer of 1 more more, and m is an integer of 2 or more, in a chamber housing a substrate therein; introducing a gaseous radical polymerization initiator into said chamber and utilizing light energy to thereby excite said compound to effect formation of a deposited film containing silicon on said substrate; said radical polymerization initiator being selected from the group consisting of a hydrogen peroxide, R--OOH; a dialkyl peroxide, R--OO--R'; a diacyl peroxide, (R--COO) 2 and an ester peroxide, R--COO--R' in which R and R' are each independently alkyl or phenyl.
Claim 8
Independent Claim
120 words
A method for forming a deposited film comprising: forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si n H m wherein n is an integer of 1 more more, and m is an integer of 2 or more, in a chamber housing a substrate therein; introducing a gaseous radical polymerization initiator into said chamber and utilizing light energy to thereby excite said compound to effect formation of a deposited film containing silicon on said substrate; said radical polymerization initiator being selected from the group consisting of a hydrogen peroxide, R--OOH; a dialkyl peroxide, R--OO--R'; a diacyl peroxide, (R--COO) 2 and an ester peroxide, R--COO--R' in which R and R' are each independently alkyl or phenyl.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-30 | 1993-10-30 | 1994-05-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-30 | 1997-10-30 | 1998-05-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-30 | 2001-10-30 | 2002-05-01 | $7700.00 | Window Closed / Lapsed |