US4921722A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming deposited film
Assignee: Canon Inc
•
Filing: 1985-10-11
•
Granted: 1990-05-01
•
Expires: 2005-10-11
Abstract
Abstract A method for forming a deposited film by forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula SinHm wherein n is an integer of 1 or more, and m is an integer of 2 or more in a chamber housing a substrate therein and forming a deposited film containing silicon on said substrate by excitation of said compound to effect decomposition or polymerization thereof comprises introducing a gaseous radical polymerization initiator into said chamber and utilizing light energy, thereby exciting said compound to effect decomposition or polymerization thereof.
Inventors
- 👤 Yoshiyuki Osada
- 👤 Hisanori Tsuda
- 👤 Masafumi Sano
- 👤 Satoshi Omata
- 👤 Katsuji Takasu
- 👤 Yutaka Hirai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:02
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/24; C23C16/44; C23C16/448; C23C16/452; H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
82 words
A method for forming a deposited film comprising: forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si n H m wherein n is an integer of 1 or more, and m is an integer of 2 or more, in a chamber housing a substrate therein; introducing a gaseous CCl 4 radical polymerization initiator into said chamber and utilizing light energy to thereby excite said compound to effect formation of a deposited film containing silicon on said substrate.
Claim 2
Independent Claim
82 words
A method for forming a deposited film comprising: forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si n H m wherein n is an integer of 1 or more, and m is an integer of 2 or more, in a chamber housing a substrate therein; introducing a gaseous CCl 4 radical polymerization initiator into said chamber and utilizing light energy to thereby excite said compound to effect formation of a deposited film containing silicon on said substrate.
Claim 3
Dependent Claim
24 words
A method according to claim 1, wherein said hydrogenated silicon compound is a chain hydrogenated silicon compound wherein n is 2, 3 or 4.
Claim 4
Dependent Claim
24 words
A method according to claim 1, wherein said hydrogenated silicon compound is a cyclic hydrogenated silicon compound wherein n is 3, 4 or 7.
Claim 5
Independent Claim
82 words
A method for forming a deposited film comprising: forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si n H m wherein n is an integer of 1 or more, and m is an integer of 2 or more, in a chamber housing a substrate therein; introducing a gaseous azo compound radical polymerization initiator into said chamber and utilizing light energy to thereby excite said compound to effect formation of a deposited film containing silicon on said substrate.
Claim 6
Independent Claim
82 words
A method for forming a deposited film comprising: forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si n H m wherein n is an integer of 1 or more, and m is an integer of 2 or more, in a chamber housing a substrate therein; introducing a gaseous azo compound radical polymerization initiator into said chamber and utilizing light energy to thereby excite said compound to effect formation of a deposited film containing silicon on said substrate.
Claim 7
Independent Claim
120 words
A method for forming a deposited film comprising: forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si n H m wherein n is an integer of 1 more more, and m is an integer of 2 or more, in a chamber housing a substrate therein; introducing a gaseous radical polymerization initiator into said chamber and utilizing light energy to thereby excite said compound to effect formation of a deposited film containing silicon on said substrate; said radical polymerization initiator being selected from the group consisting of a hydrogen peroxide, R--OOH; a dialkyl peroxide, R--OO--R'; a diacyl peroxide, (R--COO) 2 and an ester peroxide, R--COO--R' in which R and R' are each independently alkyl or phenyl.
Claim 8
Independent Claim
120 words
A method for forming a deposited film comprising: forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si n H m wherein n is an integer of 1 more more, and m is an integer of 2 or more, in a chamber housing a substrate therein; introducing a gaseous radical polymerization initiator into said chamber and utilizing light energy to thereby excite said compound to effect formation of a deposited film containing silicon on said substrate; said radical polymerization initiator being selected from the group consisting of a hydrogen peroxide, R--OOH; a dialkyl peroxide, R--OO--R'; a diacyl peroxide, (R--COO) 2 and an ester peroxide, R--COO--R' in which R and R' are each independently alkyl or phenyl.
References Cited (Backward Citations)
US4448801A
Cited
US4459163A
Cited
US4585671A
Cited
JPS59104471A
Cited
US4532199A
Cited
US4546008A
Cited
US4544423A
Cited
US4759947A
Cited
US4657777A
Cited
US4569855A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-30 | 1993-10-30 | 1994-05-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-30 | 1997-10-30 | 1998-05-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-30 | 2001-10-30 | 2002-05-01 | $7700.00 | Window Closed / Lapsed |