US4920445A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Junction-breakdown protection semiconductor device
Assignee: Samsung Semiconductor and Telecomunications Co Ltd
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Filing: 1987-11-17
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Granted: 1990-04-24
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Expires: 2007-11-17
Abstract
Abstract A junction-breakdown protection semiconductor device provides a well region which prevents the junction between a metal conductor and a diffused region from breakdown even under a high voltage or high current input. The junction-breakdown protection semiconductor device includes a metal conductor to which a high voltage is applied a semiconductor region of high impurity concentration having a conductivity type which is opposite to the conductivity type of the substrate is connected to the metal conductor through an opening in an insulating film. A second semiconductor region of the same conductivity type as the first semiconductor region is formed deeper in junction depth than the first semiconductor region under the opening in the insulator for ohmic connection on the surface of the first semiconductor region. This invention has the advantage of increased margin even with a alignment error of the ohmic connection in the fabricating process and thus provides an increased reliability of the semiconductor device.
Inventors
- 👤 Dong Soo Jun
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 21:37
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/60; H10D89/601; H10D62/00; H10D62/10; H10D62/102; H10D62/103; H10D62/105; H10D89/921
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
133 words
In a semiconductor integrated circuit, a structure for preventing an electrical discharge breakdown at the junction of a metal pad conductor and a non-metallic conductive region of said semiconductor comprising; a semiconductor substrate having a first conductivity type; a first semiconductor region of high impurity concentration and having a conductivity type opposite to that of said first conductivity type; an insulating film over said first semiconductor region and having a plurality of openings therein; a metal pad conductor over said insulating film and extending through said plurality of openings to make electrical contact with said first semiconductor region; and a second semiconductor region of the same conductivity type as said first semiconductor region formed under said pad conductor and said first semiconductor region to a depth substantially deeper than said first semiconductor region.
Claim 2
Dependent Claim
133 words
In a semiconductor integrated circuit, a structure for preventing an electrical discharge breakdown at the junction of a metal pad conductor and a non-metallic conductive region of said semiconductor comprising; a semiconductor substrate having a first conductivity type; a first semiconductor region of high impurity concentration and having a conductivity type opposite to that of said first conductivity type; an insulating film over said first semiconductor region and having a plurality of openings therein; a metal pad conductor over said insulating film and extending through said plurality of openings to make electrical contact with said first semiconductor region; and a second semiconductor region of the same conductivity type as said first semiconductor region formed under said pad conductor and said first semiconductor region to a depth substantially deeper than said first semiconductor region.
Claim 3
Dependent Claim
22 words
The semiconductor integrated circuit of claim 1 wherein said second region is at least ten times deeper than said first semiconductor region.
Claim 4
Dependent Claim
157 words
In a semiconductor integrated circuit, a structure for preventing electrical discharge breakdown at the junction of a metal conductor and a non-metallic conductive region of said semiconductor integrated circuit comprising; a semiconductor substrate having a first conductivity type, a first semiconductor region of high impurity concentration having a conductivity type opposite to that of said first said conductivity type; an insulating film formed over said first semiconductor region; a metal conductor positioned over said insulating film and at least a portion of said first semiconductor region, said insulating film having a plurality of holes therein for permitting an electrical ohmic contact between said metal conductor and said first semiconductor region; and a second semiconductor region of the same conductivity type as said first semiconductor region having a lower impurity concentration than said first semiconductor region and formed substantially deeper than said first semiconductor region under the ohmic contact between said metal conductor and said first semiconductor region.
Claim 5
Dependent Claim
157 words
In a semiconductor integrated circuit, a structure for preventing electrical discharge breakdown at the junction of a metal conductor and a non-metallic conductive region of said semiconductor integrated circuit comprising; a semiconductor substrate having a first conductivity type, a first semiconductor region of high impurity concentration having a conductivity type opposite to that of said first said conductivity type; an insulating film formed over said first semiconductor region; a metal conductor positioned over said insulating film and at least a portion of said first semiconductor region, said insulating film having a plurality of holes therein for permitting an electrical ohmic contact between said metal conductor and said first semiconductor region; and a second semiconductor region of the same conductivity type as said first semiconductor region having a lower impurity concentration than said first semiconductor region and formed substantially deeper than said first semiconductor region under the ohmic contact between said metal conductor and said first semiconductor region.
Claim 6
Dependent Claim
22 words
The integrated circuit of claim 3 wherein said second semiconductor region is at least ten times deeper than said first semiconductor region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-23 | 1993-10-23 | 1994-04-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-23 | 1997-10-23 | 1998-04-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-23 | 2001-10-23 | 2002-04-24 | $7700.00 | Window Closed / Lapsed |