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US4920068A
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Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials
Assignee: Wyeth Holdings LLC
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Filing: 1986-04-02
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Granted: 1990-04-24
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Expires: 2006-04-02
Abstract
Abstract A process to produce one or more Group II-VI epitazial layers over a crystalline substrate by directing flows of one or more Group II components and a Group VI metalorganic vapor to a heated substrate whereby the vapors thereby react to form the epitaxial layer(s), is improved in terms of lower reaction temperatures and higher product quality if, as the Group VI metalorganic vapor source, there is used a tellurium compound of the formula: ##STR1## wherein R 1 and R 2 are, independently, hydrogen or C 1 -C 4 alkyl, preferably, hydrogen.
Inventors
- 👤 Donald Valentine, Jr.
- 👤 Duncan W. Brown
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:54
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/10; C30B29/46; C30B29/48; Y; Y10; Y10S; Y10S148/00; Y10S148/064; Y10S148/11
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
142 words
In a method for growing in a reactor a Group II-VI epitaxial layer over a crystalline substrate or over a crystalline substrate having one or more epitaxial layers thereon, said method comprising the steps of: (i) placing said substrate on a susceptor which is heated to a temperature in the range from about 220° C. to about 300° C.; (ii) directing a flow of at least one vaporized Group II component toward said substrate; (iii) directing a flow of a vaporized Group VI metal-organic toward said substrate; and (iv) reacting the directed flows of Group II component and Group VI metalorganic to form the epitaxial layer, the improvement which comprises using as said Group VI metalorganic a tellurium compound of the formula: ##STR3## wherein R 1 and R 2 are, independently hydrogen or alkyl of from 1 to about 4 carbon atoms.
Claim 2
Dependent Claim
142 words
In a method for growing in a reactor a Group II-VI epitaxial layer over a crystalline substrate or over a crystalline substrate having one or more epitaxial layers thereon, said method comprising the steps of: (i) placing said substrate on a susceptor which is heated to a temperature in the range from about 220° C. to about 300° C.; (ii) directing a flow of at least one vaporized Group II component toward said substrate; (iii) directing a flow of a vaporized Group VI metal-organic toward said substrate; and (iv) reacting the directed flows of Group II component and Group VI metalorganic to form the epitaxial layer, the improvement which comprises using as said Group VI metalorganic a tellurium compound of the formula: ##STR3## wherein R 1 and R 2 are, independently hydrogen or alkyl of from 1 to about 4 carbon atoms.
Claim 3
Dependent Claim
142 words
In a method for growing in a reactor a Group II-VI epitaxial layer over a crystalline substrate or over a crystalline substrate having one or more epitaxial layers thereon, said method comprising the steps of: (i) placing said substrate on a susceptor which is heated to a temperature in the range from about 240° C. to about 300° C.; (ii) directing a flow of at least one vaporized Group II component toward said substrate; (iii) directing a flow of a vaporized Group VI metal-organic toward said substrate; and (iv) reacting the directed flows of Group II component and Group VI metalorganic to form the epitaxial layer, the improvement which comprises using as said Group VI metalorganic a tellurium compound of the formula: ##STR4## wherein R 1 and R 2 are, independently hydrogen or alkyl of from 1 to about 4 carbon atoms.
Claim 4
Dependent Claim
142 words
In a method for growing in a reactor a Group II-VI epitaxial layer over a crystalline substrate or over a crystalline substrate having one or more epitaxial layers thereon, said method comprising the steps of: (i) placing said substrate on a susceptor which is heated to a temperature in the range from about 240° C. to about 300° C.; (ii) directing a flow of at least one vaporized Group II component toward said substrate; (iii) directing a flow of a vaporized Group VI metal-organic toward said substrate; and (iv) reacting the directed flows of Group II component and Group VI metalorganic to form the epitaxial layer, the improvement which comprises using as said Group VI metalorganic a tellurium compound of the formula: ##STR4## wherein R 1 and R 2 are, independently hydrogen or alkyl of from 1 to about 4 carbon atoms.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-23 | 1993-10-23 | 1994-04-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-23 | 1997-10-23 | 1998-04-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-23 | 2001-10-23 | 2002-04-24 | $7700.00 | Window Closed / Lapsed |