CMOS to ECL output buffer

Claim 2

In an integrated circuit, a circuit for converting CMOS logic input signals from a source thereof to ECL output signals, having: a current source (17) coupled to a first power source (Vss); a first transistor (16) of a first conductivity type, having a control electrode and first and second outputs, the control electrode having the CMOS logic input signals thereon, the first output coupling to the current source and the second output coupling to an intermediate node; a first resistor having a predetermined resistance R18 and coupling between a second power source (Vcc) and the intermediate node; and, a bipolar transistor (19) having a base, collector and emitter, the collector coupling to the second power source, the base coupling to the intermediate node and the emitter coupling to an output node; characterized by a second transistor (14) of a second conductivity type, having a control electrode and first and second outputs, the control electrode having theCMOS logic input signals thereon, the first output coupling to the second power source and the second output coupling to the intermediate node; wherein the first power source has a potential less than the second power source, and the output node has thereon the ECL output signals.

Claim 3

The circuit recited in claim 1, wherein the current source provides a current which varies in correspondence with variations in the resistance of the first resistor, such that the voltage drop across the first resistor, in response to the current from the current source, is substantially constant with the variations in the resistance of th first resistor.

Claim 4

The circuit recited in claim 2, wherein the current source is characterized by: a voltage source supplying a constant voltage Vs referenced to the first power source; an amplifier (28) having an output, inverting and non-inverting inputs, the non-inverting input coupled to the voltage source; a third transistor (29) having a control electrode, first and second outputs, the control electrode coupling to the output of the amplifier, the first output coupling to the inverting input of the amplifier; a second resistor having a predetermined resistance R25, coupling between the first output of the FET and the first power source; a first current mirror (30), having an output and a current magnification factor M1, coupling between the second power source and the second output of the transistor; and a second current mirror (31), having an output and a current magnification factor M2, coupling between the first power source output and the first current mirror; wherein the second current mirror provides the output current of the current source according to: M1M2(Vs/R25) where M1 is the current magnification factor of the first current mirror and M2 is the current magnification factor of the second current mirror.

Claim 5

The circuit recited in claim 3, wherein the first current mirror is composed of field effect transistors of the second conductivity type and the second current mirror is composed of field effect transistors of the first conductivity type.

Claim 6

The circuit recited in claim 4, wherein the amplifier is an operational amplifier.

Claim 7

The circuit recited in claim 5, wherein the third transistor is a field-effect transistors of the first conductivity type.

Claim 8

The circuit recited in claim 6, wherein transistors of the first conductivity type are N-channel field-effect transistors, transistors of the second conductivity type are P-channel field-effect transistors and the bipolar transistor is and NPN bipolar transistor.

Claim 9

The circuit recited in claim 7, wherein the threshold voltage of the combination of the first and second transistors are approximately one-half the voltage difference between the second power source and the first power source.

Claim 10

The circuit recited in claim 8, wherein the first power source has a voltage between -4.5 and -5.2 volts and the second power source has a voltage essentially at zero volts (ground.).

Claim 11

The circuit recited in claim 9, wherein a CMOS inverter circuit is disposed between the source of CMOS logic input signals and the control electrodes of the first and second FETs.

Claim 12

In an integrated circuit, a buffer circuit for converting CMOS logic input signals to ECL output signals, having: a current source (17) coupled to a first power source (Vss); a first transistor (16) of a first conductivity type, having a control electrode and first and second outputs, the control electrode having the CMOS logic input signals thereon, the first output coupling to the second power source and the second output coupling to the intermediate node; a first resistor having a predetermined resistance (R18) and coupling between a second power source (Vcc) and the intermediate node; and, a bipolar transistor (19) having a base, collector and emitter, the collector coupling to the second power source, the base coupling to the intermediate node and the emitter coupling to an output node; the current source characterized by: a voltage source supplying a constant voltage Vs referenced to the first power source; an amplifier (28) having an output, inverting and non-inverting inputs, the non-inverting input coupled to the voltage source; a second transistor (29) having a control electrode, first and second outputs, the control electrode coupling to the output of the amplifier, the first output coupling to the inverting input of the amplifier; a second resistor having a predetermined resistance R25 and coupling between the first output of the transistor and the first power source; a first current mirror (30), having an output and a current magnification factor M1, coupling between the second power source and the second output of the transistor, and a second current mirror (31), having an output and a current magnification factor M2, coupling between the first power source output and the first current mirror; wherein the second current mirror provides the output current of the current source according to: M1M2(Vs/R25).

Claim 13

In an integrated circuit, a buffer circuit for converting CMOS logic input signals to ECL output signals, having: a current source (17) coupled to a first power source (Vss); a first transistor (16) of a first conductivity type, having a control electrode and first and second outputs, the control electrode having the CMOS logic input signals thereon, the first output coupling to the second power source and the second output coupling to the intermediate node; a first resistor having a predetermined resistance (R18) and coupling between a second power source (Vcc) and the intermediate node; and, a bipolar transistor (19) having a base, collector and emitter, the collector coupling to the second power source, the base coupling to the intermediate node and the emitter coupling to an output node; the current source characterized by: a voltage source supplying a constant voltage Vs referenced to the first power source; an amplifier (28) having an output, inverting and non-inverting inputs, the non-inverting input coupled to the voltage source; a second transistor (29) having a control electrode, first and second outputs, the control electrode coupling to the output of the amplifier, the first output coupling to the inverting input of the amplifier; a second resistor having a predetermined resistance R25 and coupling between the first output of the transistor and the first power source; a first current mirror (30), having an output and a current magnification factor M1, coupling between the second power source and the second output of the transistor, and a second current mirror (31), having an output and a current magnification factor M2, coupling between the first power source output and the first current mirror; wherein the second current mirror provides the output current of the current source according to: M1M2(Vs/R25).

Claim 14

The buffer circuit recited in claim 11, wherein the first current mirror is composed of field effect transistors of the second conductivity type and the second current mirror is composed of field effect transistors of the first conductivity type.

Claim 15

The buffer circuit recited in claim 12, wherein the amplifier is an operational amplifier.

Claim 16

The buffer circuit recited in claim 13, wherein the second transistor is a field-effect transistor of the first conductivity type.

Claim 17

The buffer circuit recited in claim 14, further characterized by a third field-effect transistor (14) of a second conductivity type, having a control electrode and first and second outputs, the control electrode having the CMOS logic input signals thereon, the first output coupling to the second power source and the second output coupling to the intermediate node.

Claim 18

The buffer circuit of recited in claim 15, wherein transistors of the first conductivity type are N-channel field-effect transistors, the second transistor is a P-channel field-effect transistor and the bipolar transistor is a silicon NPN bipolar transistor.

Claim 19

The circuit recited in claim 16, wherein the threshold voltage of the combination of the first and second transistors are approximately one-half the voltage difference between the second power source and the first power source.

Claim 20

The circuit recited in claim 17, wherein the first power source has a voltage between -4.5 and -5.2 volts and the second power source has a voltage essentially at zero volts (ground.).