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US4910123A Expired / Lapsed US ⏱️ 0.0 years remaining

Pattern forming method

Assignee: Panasonic Holdings Corp
•
Filing: 1987-12-24
•
Granted: 1990-03-20
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Expires: 2007-12-24
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Abstract

Abstract Disclosed is a pattern forming method using pattern forming material which is reactive to a light of 249 nm or so such as DUV light or excimer laser light and applicable to manufacture of semiconductors. The material used in this method includes resin which includes a bonding unit of <IMAGE> and has low absorption near 249 nm after light exposure, and is soluble in a solvent which dissolves the resin. By this method, a fine pattern of high contrast can be obtained.

Inventors

  • 👤 Masayuki Endo
  • 👤 Masaru Sasago
  • 👤 Kazufumi Ogawa

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 12:29
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/039; C; C08; C08F; C08F8/00; C08F8/30; C08G; C08G8/00; C08G8/28; Y; Y10; Y10S; Y10S430/00; Y10S430/146

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 129 words
A pattern forming method comprising: a. applying on a substrate a pattern forming material which is composed of a diazo compound which includes a bonding unit of ##STR72## has high absorption of light at or near 249 nm before exposure thereto and low absorption of light at or near 249 nm after exposure thereto and which material is soluble in a solvent which dissolves said resin after said exposure; said compound having a ##STR73## bonding unit being formed by reacting a resin having a ##STR74## bonding unit, to produce a reaction product and then forming said diazo compound from the reaction product; b. selectively exposing said pattern forming material to such light at or near 249 nm; and c. developing said pattern forming material by applying said solvent thereto.
Claim 2
Dependent Claim 129 words
A pattern forming method comprising: a. applying on a substrate a pattern forming material which is composed of a diazo compound which includes a bonding unit of ##STR72## has high absorption of light at or near 249 nm before exposure thereto and low absorption of light at or near 249 nm after exposure thereto and which material is soluble in a solvent which dissolves said resin after said exposure; said compound having a ##STR73## bonding unit being formed by reacting a resin having a ##STR74## bonding unit, to produce a reaction product and then forming said diazo compound from the reaction product; b. selectively exposing said pattern forming material to such light at or near 249 nm; and c. developing said pattern forming material by applying said solvent thereto.
Claim 3
Dependent Claim 22 words
The method of claim 1, wherein said light near 249 nm is a pulse light as oscillated from a KrF excimer laser.
Claim 4
Dependent Claim 15 words
The method of claim 1, wherein said solvent is small in absorption near 249 nm.
Claim 5
Dependent Claim 13 words
The method of claim 1, wherein said solvent is diethylene glycol dimethyl ether.
Claim 6
Dependent Claim 25 words
The method of claim 1, wherein said compound which has low absorption near 249 nm is a resin which includes at least one OH group.
Claim 7
Dependent Claim 18 words
The method of claim 5, wherein said resin which includes at least one OH group is novolak resin.
Claim 8
Dependent Claim 14 words
The method of claim 1, wherein said resin includes at least one nitrogen atom.
Claim 9
Dependent Claim 11 words
The method of claim 1, wherien said resin includes imide bonding.
Claim 10
Dependent Claim 18 words
The method of claim 1, wherein the diazo-formation is carried out by use of para toluene sulfonyl diazide.
Claim 11
Dependent Claim 11 words
The method of claim 1, wherein said resin includes amide bonding.
Claim 12
Dependent Claim 10 words
The method of claim 1, wherein said solvent is alkaline.

References Cited (Backward Citations)

US4529682A Cited
US4522911A Cited
US4626491A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-03-19 1993-09-18 1994-03-20 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-03-19 1997-09-18 1998-03-20 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-03-19 2001-09-18 2002-03-20 $7700.00 Window Closed / Lapsed

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