Patent US2071333A successfully refreshed from Google Patents.
Patent US4910043A successfully refreshed from Google Patents.
US4910043A
Expired / Lapsed
US
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Processing apparatus and method
Assignee: Texas Instruments Inc
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Filing: 1987-07-16
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Granted: 1990-03-20
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Expires: 2007-07-16
Abstract
Abstract A processing apparatus and method utilizing a single process chamber for deposition of silicon nitride with a silicon source, a remote plasma including a nitrogen source, additional ultraviolet energy coupled into the process chamber to provide additional molecular excitation of the silicon source.
Inventors
- 👤 Dean W. Freeman
- 👤 James B. Burris
- 👤 Cecil J. Davis
- 👤 Lee M. Lowenstein
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 07:16
CPC Classifications
C; C04; C04B; C04B41/00; C04B41/80; C04B41/91; C04B41/53; C04B41/5338; C04B41/5346; C23; C23F; C23F4/00; H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
119 words
A method for depositing silicon nitride on a wafer comprising: (a) disposing a wafer into a process chamber at low pressure; (b) applying a pressure to said chamber less than ambient to maintain said chamber at less than ambient; (c) heating said chamber; (d) generating a remote plasma from a source of nitrogen; (e) introducing a silicon source gas and said remote plasma into the process chamber and to a face of said wafer; (f) providing a separate flow, within said chamber of a gas suitable for the production fo ultraviolet light; (g) generating an RF power discharge within said separate flow to release ultraviolet energy; and (h) illuminating the wafer with said separately and locally generated ultraviolet energy.
Claim 2
Independent Claim
119 words
A method for depositing silicon nitride on a wafer comprising: (a) disposing a wafer into a process chamber at low pressure; (b) applying a pressure to said chamber less than ambient to maintain said chamber at less than ambient; (c) heating said chamber; (d) generating a remote plasma from a source of nitrogen; (e) introducing a silicon source gas and said remote plasma into the process chamber and to a face of said wafer; (f) providing a separate flow, within said chamber of a gas suitable for the production fo ultraviolet light; (g) generating an RF power discharge within said separate flow to release ultraviolet energy; and (h) illuminating the wafer with said separately and locally generated ultraviolet energy.
Claim 3
Dependent Claim
15 words
The process as set forth in claim 1 wherein said source of silicon is dichlorosilane.
Claim 4
Dependent Claim
24 words
The process as set forth in claim 1 wherein source of nitrogen is taken from the group of N 2 or NH 3 .
Claim 5
Dependent Claim
23 words
The process as set forth in claim 1 wherein said source of silicon is introduced into the chamber along with the remote plasma.
Claim 6
Dependent Claim
24 words
The process as set forth in claim 1 including the steps of removing the wafer from said process chamber and performing a cleanup operation.
Claim 7
Dependent Claim
19 words
The process as set forth in claim 1 wherein said remote plasma and said ultraviolet energy are generated simultaneously.
Claim 8
Dependent Claim
24 words
The process as set forth in claim 5 wherein step of removing the wafer from said process chamber occurs before performing a cleanup operation.
Claim 9
Independent Claim
102 words
A method for depositing silicon nitride on a wafer comprising: (a) generating a plasma containing active species from a gas mixture comprising a source of nitrogen in a remote plasma generator remote from a process chamber; (b) introducing a silicon source gas and said active species into a process chamber and to a face of said wafer; (c) providing a separate flow, within said chamber, of a gas suitable for the production of ultraviolet light; (d) generating an RF power discharge within said separate flow to release ultraviolet energy; and (e) illuminating the wafer with said separately and locally generated ultraviolet energy.
Claim 10
Independent Claim
102 words
A method for depositing silicon nitride on a wafer comprising: (a) generating a plasma containing active species from a gas mixture comprising a source of nitrogen in a remote plasma generator remote from a process chamber; (b) introducing a silicon source gas and said active species into a process chamber and to a face of said wafer; (c) providing a separate flow, within said chamber, of a gas suitable for the production of ultraviolet light; (d) generating an RF power discharge within said separate flow to release ultraviolet energy; and (e) illuminating the wafer with said separately and locally generated ultraviolet energy.
Claim 11
Dependent Claim
19 words
The process as set forth in claim 8 wherein said remote plasma and said ultraviolet energy are generated simultaneously.
Claim 12
Dependent Claim
15 words
The process as set forth in claim 8 wherein said source of silicon is dichlorosilane.
Claim 13
Dependent Claim
24 words
The process as set forth in claim 8 wherein source of nitrogen is taken from the group of N 2 or NH 3 .
Claim 14
Dependent Claim
23 words
The process as set forth in claim 8 wherein said source of silicon is introduced into the chamber along with the active species.
Claim 15
Dependent Claim
29 words
The process as set forth in claim 8 including the steps of removing the wafer from said process chamber and performing a cleanup operation using remotely generated active species.
Claim 16
Dependent Claim
30 words
The process as set forth in claim 13 wherein the step of removing the wafer from said process chamber occurs before performing a cleanup operation using remotely generated active species.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-03-19 | 1993-09-18 | 1994-03-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-19 | 1997-09-18 | 1998-03-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-19 | 2001-09-18 | 2002-03-20 | $7700.00 | Window Closed / Lapsed |