Semiconductor device

Claim 2

A semiconductor device comprising: first and second vertical bipolar transistors respectively formed in first and second isolated protruding epitaxial layer segments which segments are formed on an upper surface of a semiconductor substrate, each epitaxial layer segment including a first region of a first conductivity type, a second region of a second conductivity type and a third region of said first conductivity type, wherein said first, second and third regions are stacked in descending order from an upper surface of said epitaxial layer, and wherein an upper surface of said first region is in the same plane as the upper surface of said epitaxial layer segments; an insulating film formed above the upper surface of said semiconductor substrate and having openings wherein the first regions of said first and second epitaxial layer segments are disposed; a first semiconductor layer, having at least first and second adjacent regions respectively having different impurity concentrations and being of the same conductivity type as the first region of said first and second epitaxial layer segments which form said transistors, said first semiconductor layer being formed above said insulting film and being in electrical contact, via the first region thereof, with the first region of said first epitaxial layer segment through one of said openings of said insulating film and wherein the second region of said first semiconductor layer is in electrical contact on one side thereof with the first region of said semiconductor layer, which first region overlies said first epitaxial portion, and is in electrical contact on another side thereof, through a further opening of said insulating film, with the second region of said second epitaxial layer segment; a Schottky barrier diode located above the first region of said first epitaxial layer segment, having a junction formed on the first region at an upper surface region of said first semiconductor layer, said first region of said first semiconductor layer being a low resistive region connecting said Schottky barrier diode to the first region of said first epitaxial layer segment; and wherein the second region of said first semiconductor layer is of a relatively lower impurity concentration doped region than said first region thereof and has a highly concentrated impurity doped region formed thereon.

Claim 3

A semiconductor device according to claim 1, wherein the first region of said first epitaxial layer segment is an emitter of said first vertical bipolar transistor and the second region of said second epitaxial layer segment is a base of said second vertical bipolar transistor.

Claim 4

A semiconductor device according to claim 1, wherein the first a region of said first epitaxial layer segment is a collector of said first vertical bipolar transistor and the second region of said second epitaxial layer segment is a base of said second vertical bipolar transistor.

Claim 5

A semiconductor device according to claim 1, wherein said Schottky barrier diode is located directly above the first region of said first epitaxial layer portion and comprises a Schottky barrier formed between the first region of said first semiconductor layer and a silicide layer formed in a surface region of said first semiconductor layer.

Claim 6

A semiconductor device according to claim 4, wherein said highly concentrated impurity doped region is a low resistive third region which is provided on an upper surface of the second region formed in said first semiconductor layer, said low resistive third region having the same conductivity type as said high resistive region.

Claim 7

A semiconductor device according to claim 5, wherein said silicide layer and said low resistive third region are electrically interconnected with each other by a wiring layer.

Claim 8

A semiconductor device according to claim 1, wherein the first region of said first semiconductor layer is comprised of first and second sections thereof, said first section being formed above said first epitaxial layer portion contacting said second region of said first semiconductor layer at said one side thereof and said first region of said first epitaxial layer segment and said second section being formed on said further opening of said insulating film and being extended over said insulating film so as to effect contact with said second region of said first semiconductor layer, and wherein said low resistive first region formed in said first semiconductor layer is electrically connected with the second region of said second epitaxial layer segment through a second semiconductor layer formed in a region between said first and second epitaxial segments which region is below the second section of said low resistive first region.

Claim 9

A semiconductor device according to claim 1, wherein the third regions of said first and second epitaxial layer segments are electrically interconnected with each other through a low resistive buried layer of said first conductivity type provided on said semiconductor body.

Claim 10

A semiconductor device according to claim 8, wherein the third regions of said first and second epitaxial layer segments are individual collectors of said first and second vertical bipolar transistors.

Claim 11

A semiconductor device according to claim 8, where the third regions of said first and second epitaxial layer segments are individual emitters of said first and second vertical bipolar transistors.

Claim 12

A semiconductor device according to claim 5, wherein said first semiconductor layer is one of a mono-crystalline silicon layer and a polycrystalline silicon layer having said at least first and second regions, each of a different impurity concentration.

Claim 13

A semiconductor device according to claim 7, wherein said first semiconductor layer is a polycrystalline silicon layer having said at least first and second regions, each of a different impurity concentration, and said second semiconductor layer is a low resistive polycrystalline silicon layer providing contact between the first region of said first polycrystalline silicon layer and the second region of said second transistor.

Claim 14

A semiconductor device according to claim 1, wherein said first semiconductor layer is one of a mono-crystalline silicon layer and a polycrystalline silicon layer having said at least first and second regions, each of a different impurity concentration.

Claim 15

A semiconductor device comprising: at least first and second vertical bipolar transistors, formed on a main surface of a semiconductor substrate, wherein each vertical bipolar transistor includes a first region of a first conductivity type overlying a second region of a second conductivity type, complementary to said first conductivity type, and said second region overlying a third region of said first conductivity type; a first insulating film formed on said main surface of said semiconductor substrate and having openings wherein said vertical bipolar transistors are disposed; a first polycrystalline semiconductor layer formed on said first insulating film and between said first and second vertical bipolar transistors, having an upper surface, and being in electrical contact with said second region of each vertical transistor, said first polycrystalline semiconductor layer being divided by an isolation region into segments so as to electrically isolate the second regions of said first and second vertical bipolar transistors from each other; a second insulating film formed above the upper surfaces of said first and second vertical bipolar transistors, on said first polycrystalline semiconductor layer and on an upper surface of said isolation region and having openings over the first regions of said vertical bipolar transistors and over one of said segments of said first polycrystalline semiconductor layer which is in electrical contact with the second region of said second vertical bipolar transistor; a second polycrystalline semiconductor layer of said first conductivity type, having at least first and second regions of different impurity doping concentrations, formed on the upper surface of the first region of said first vertical bipolar transistor through an opening of said second insulating film and extending over said second insulating film overlying said upper surfaces between said transistors and being in contact with said one segment of the upper surface of said first polycrystalline silicon film through an opening of said second insulating film so as to effect electrical contact between the first region of said first transistor with the second region of said second transistor; a Schottky barrier diode having a junction formed at an upper surface of said first region of said second polycrystalline semiconductor layer directly above the first region of said first vertical bipolar transistor, said Schottky barrier diode being electrically connected, via said first region of said second polycrystalline semiconductor layer, to said first region of said transistor, said first region of said second polycrystalline semiconductor layer providing a low resistive connection between said Schottky barrier diode and the first region of said first transistor; wherein the second region of said second polycrystalline semiconductor layer is of a lower impurity doping concentration than said first region thereof thereby providing high resistance; and wherein said second region of said second polycrystalline semiconductor layer is electrically connected to the first region of said second polycrystalline semiconductor layer and the second region of said second vertical bipolar transistor, via said one segment of said first polycrystalline semiconductor layer.

Claim 16

A semiconductor device comprising: at least first and second vertical bipolar transistors, formed on a main surface of a semiconductor substrate, wherein each vertical bipolar transistor includes a first region of a first conductivity type overlying a second region of a second conductivity type, complementary to said first conductivity type, and said second region overlying a third region of said first conductivity type; a first insulating film formed on said main surface of said semiconductor substrate and having openings wherein said vertical bipolar transistors are disposed; a first polycrystalline semiconductor layer formed on said first insulating film and between said first and second vertical bipolar transistors, having an upper surface, and being in electrical contact with said second region of each vertical transistor, said first polycrystalline semiconductor layer being divided by an isolation region into segments so as to electrically isolate the second regions of said first and second vertical bipolar transistors from each other; a second insulating film formed above the upper surfaces of said first and second vertical bipolar transistors, on said first polycrystalline semiconductor layer and on an upper surface of said isolation region and having openings over the first regions of said vertical bipolar transistors and over one of said segments of said first polycrystalline semiconductor layer which is in electrical contact with the second region of said second vertical bipolar transistor; a second polycrystalline semiconductor layer of said first conductivity type, having at least first and second regions of different impurity doping concentrations, formed on the upper surface of the first region of said first vertical bipolar transistor through an opening of said second insulating film and extending over said second insulating film overlying said upper surfaces between said transistors and being in contact with said one segment of the upper surface of said first polycrystalline silicon film through an opening of said second insulating film so as to effect electrical contact between the first region of said first transistor with the second region of said second transistor; a Schottky barrier diode having a junction formed at an upper surface of said first region of said second polycrystalline semiconductor layer directly above the first region of said first vertical bipolar transistor, said Schottky barrier diode being electrically connected, via said first region of said second polycrystalline semiconductor layer, to said first region of said transistor, said first region of said second polycrystalline semiconductor layer providing a low resistive connection between said Schottky barrier diode and the first region of said first transistor; wherein the second region of said second polycrystalline semiconductor layer is of a lower impurity doping concentration than said first region thereof thereby providing high resistance; and wherein said second region of said second polycrystalline semiconductor layer is electrically connected to the first region of said second polycrystalline semiconductor layer and the second region of said second vertical bipolar transistor, via said one segment of said first polycrystalline semiconductor layer.

Claim 17

A semiconductor device according to claim 14, wherein said second region of said second polycrystalline semiconductor layer is disposed on the upper surface of said second insulating film corresponding to an area above said semiconductor substrate between said first and second transistors.

Claim 18

A semiconductor device according to claim 15, wherein said first, second and third regions of said transistors are emitter, base and collector regions, respectively.

Claim 19

A semiconductor device according to claim 15, wherein said first, second and third regions of said transistors are collector, base and emitter regions, respectively.

Claim 20

A semiconductor device according to claim 14, further comprising: a third insulating film formed on upper surfaces of said second insulating film and on said second polycrystalline semiconductor layer and including a plurality of openings so as to effect in electrical contact surfaces with a wiring layer.

Claim 21

A semiconductor device according to claim 18, wherein said wiring layer is a metal electrode layer which commonly contacts, through respective openings of said third insulating film, the upper surface of said first region of said second polycrystalline semiconductor which forms said Schottky barrier diode junction and an upper surface of said high resistive second region of said second polycrystalline semiconductor layer via a highly doped contact region, corresponding to a third highly doped region of said second polycrystalline semiconductor layer.

Claim 22

A semiconductor device according to claim 19, wherein said Schottky barrier diode includes a silicide layer at an opening of said third insulating film on the upper surface of said first portion of said second polycrystalline semiconductor layer.

Claim 23

A semiconductor device according to claim 19, wherein said metal electrode layer consists of aluminum.

Claim 24

A semiconductor device according to claim 21, wherein said first and second vertical bipolar transistors further include graft base regions for electrically contacting the respective second regions thereof, which are the base regions of the transistors, to the corresponding segments of the first polycrystalline semiconductor layer.

Claim 25

A semiconductor device according to claim 22, wherein said first, second and third regions of said transistors are formed in individual epitaxial layer segments.

Claim 26

A semiconductor device according to claim 23, wherein said first and second polycrystalline semiconductor layers are polycrystalline silicon layers.

Claim 27

A semiconductor device according to claim 24, wherein said second polycrystalline silicon layer is an n-type layer, said first polycrystalline silicon layer is a low resistive layer and said first and second transistors are NPN type vertical bipolar transistors.

Claim 28

A semiconductor device according to claim 25, further including an n-type buried layer disposed beneath said transistors in said semiconductor substrate for electrically connecting said third regions thereof.

Claim 29

A semiconductor device according to claim 26, wherein said first, second and third regions of said transistors are emitter, base and collector regions, respectively.

Claim 30

A semiconductor device according to claim 26, wherein said first, second and third regions of said transistors are collector, base and emitter regions, respectively.

Claim 31

A semiconductor device according to claim 14, further including a buried layer of said first conductivity type disposed beneath said transistors in said semiconductor substrate for electrically connecting said third regions thereof.