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US4905060A
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Light emitting device with disordered region
Assignee: Hitachi Ltd
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Filing: 1988-05-25
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Granted: 1990-02-27
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Expires: 2008-05-25
Abstract
Abstract A light emitting device has a multiple layer film structure such as a multiple quantum well (MQW) structure which is made of an indium system compound semiconductor not containing phosphorus, wherein part of a region or regions of the multiple film structure is (are) a disordered region or regions disordered by introduction of an inpurity.
Inventors
- 👤 Naoki Chinone
- 👤 Hisao Nakashima
- 👤 Makoto Okai
- 👤 Shinji Tsuji
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:26
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/824; H10H20/8242; B; B82; B82Y; B82Y20/00; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; H01S5/3434; H10H20/811; H10H20/812; H01S5/2054; H01S5/2059; H01S5/34306
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
61 words
A light emitting device comprising: a semiconductor substrate; a plurality of semiconductor layers stacked on said semiconductor substrate, being made of compound semiconductors which include indium substantially but not phosphorus substantially, and having a disordered region formed by introducing impurities into the semiconductor layers; and a pair of electrodes for injecting carriers into said semiconductor layers so as to emit light.
Claim 2
Dependent Claim
61 words
A light emitting device comprising: a semiconductor substrate; a plurality of semiconductor layers stacked on said semiconductor substrate, being made of compound semiconductors which include indium substantially but not phosphorus substantially, and having a disordered region formed by introducing impurities into the semiconductor layers; and a pair of electrodes for injecting carriers into said semiconductor layers so as to emit light.
Claim 3
Dependent Claim
22 words
The light emitting device as set forth in claim 1, wherein one of said plurality of semiconductor layers is an active layer.
Claim 4
Dependent Claim
19 words
The light emitting device as set forth in claim 2, wherein said active layer comprises a multiple layer structure.
Claim 5
Dependent Claim
31 words
The light emitting device as set forth in claim 1, wherein said impurities are at least one species of elements selected from a group consisting of Zn, Al, Ga and Si.
Claim 6
Dependent Claim
25 words
The light emitting device as set forth in claim 1, wherein said semiconductor compound is at least one semiconductor compound selected from III-V compound semiconductors.
Claim 7
Dependent Claim
32 words
The light emitting device as set forth in claim 1, wherein said semiconductor compound is at least one member selected from a group consisting of InGaAs, InGaAlAs, InAlAs, InAlSb, InGaSb and InGaAlSb.
Claim 8
Dependent Claim
36 words
The light emitting device as set forth in claim 3, wherein said multiple layer structure comprises a plurality of layers each having a thickness of not less than 30 Å and not greater than 200 Å.
Claim 9
Dependent Claim
26 words
The light emitting device as set forth in claim 1, wherein introduction of said impurities into said semiconductor layers is accomplished by diffusion of said impurities.
Claim 10
Dependent Claim
26 words
The light emitting device as set forth in claim 1, wherein introduction of said impurities into said semiconductor layers is accomplished by ion-implantation of said impurities.
Claim 11
Dependent Claim
37 words
The light emitting as set forth in claim 1, wherein introduction of said impurities into said semiconductor layers is accomplished by epitaxial doping of said impurities into said semiconductor layers with the formation of said semiconductor layers.
Claim 12
Dependent Claim
62 words
A light emitting device comprising: a semiconductor substrate; and a region comprising a multiple layer structure having at least one disordered region therein; wherein said multiple layer structure has multiple layers made of a semiconductor compound containing indium and substantially no phosphorous as a constituent element thereof, and said disordered region is formed by diffusion of impurities in said multiple layer structure.
Claim 13
Dependent Claim
62 words
A light emitting device comprising: a semiconductor substrate; and a region comprising a multiple layer structure having at least one disordered region therein; wherein said multiple layer structure has multiple layers made of a semiconductor compound containing indium and substantially no phosphorous as a constituent element thereof, and said disordered region is formed by diffusion of impurities in said multiple layer structure.
Claim 14
Dependent Claim
111 words
A light emitting device comprising: a semiconductor substrate; a plurality of semiconductor layers formed on said substrate, comprising an active layer which emits light by injected carriers and a multiple layer structure which has at least one disordered region, wherein said multiple layer structure is made of a semiconductor compound containing indium and substantially no phosphorous as a constituent element of said semiconductor compound and said disordered region has a greater refractive index than that of at least one species of said layers in said multiple layer structure so as to confine light emitted from said active layer; and a pair of electrodes for injecting the carriers into said active layer.
Claim 15
Dependent Claim
111 words
A light emitting device comprising: a semiconductor substrate; a plurality of semiconductor layers formed on said substrate, comprising an active layer which emits light by injected carriers and a multiple layer structure which has at least one disordered region, wherein said multiple layer structure is made of a semiconductor compound containing indium and substantially no phosphorous as a constituent element of said semiconductor compound and said disordered region has a greater refractive index than that of at least one species of said layers in said multiple layer structure so as to confine light emitted from said active layer; and a pair of electrodes for injecting the carriers into said active layer.
Claim 16
Dependent Claim
19 words
The light emitting device as set forth in claim 12, wherein said active layer is the multiple layer structure.
Claim 17
Dependent Claim
96 words
A light emitting device comprising: a semiconductor substrate; and a plurality of semiconductor layers formed on said substrate, comprising an active layer which emits light by injected carriers and a multiple layer structure which includes a disordered region, wherein said multiple layer structure comprises a semiconductor compound containing indium and substantially no phosphorous as a constituent element of said semiconductor compound, and said disordered region has a greater energy band gap than that of at least one species of said layers in said multiple layer structure so as to confine the carriers in said active layer.
Claim 18
Dependent Claim
96 words
A light emitting device comprising: a semiconductor substrate; and a plurality of semiconductor layers formed on said substrate, comprising an active layer which emits light by injected carriers and a multiple layer structure which includes a disordered region, wherein said multiple layer structure comprises a semiconductor compound containing indium and substantially no phosphorous as a constituent element of said semiconductor compound, and said disordered region has a greater energy band gap than that of at least one species of said layers in said multiple layer structure so as to confine the carriers in said active layer.
Claim 19
Dependent Claim
29 words
The light emitting device as set forth in claim 14, wherein said impurity element is introduced by a method selected from a group consisting of diffusion, injection and doping.
Claim 20
Dependent Claim
30 words
The light emitting device as set forth in claim 14, wherein said compound semiconductor film is a compound selected from a group consisting of any of InGaAs, InGaAlAs, and InAlAs.
Claim 21
Dependent Claim
49 words
A light emitting device comprising: a light emitting region emitting light in accordance with injected carriers therein; and a disordered region formed by introducing impurities into a plurality of semiconductor layers which are formed by stacked structure of a plurality of compound semiconductor materials including indium but not phosphorous.
Claim 22
Dependent Claim
49 words
A light emitting device comprising: a light emitting region emitting light in accordance with injected carriers therein; and a disordered region formed by introducing impurities into a plurality of semiconductor layers which are formed by stacked structure of a plurality of compound semiconductor materials including indium but not phosphorous.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-02-26 | 1993-08-28 | 1994-02-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-26 | 1997-08-28 | 1998-02-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-26 | 2001-08-28 | 2002-02-27 | $7700.00 | Window Closed / Lapsed |