Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
130 words
A method for preparing molybdenum resistors in a superconductor integrated circuit; said method comprising: (a) depositing superconductor film on a support; (b) patterning said superconductor film to provide a patterned superconductor and exposed support; (c) applying an aluminum film on said superconductor film and said exposed support; (d) applying a molybdenum film on said aluminum film to provide an aluminum-molybdenum, etch-stop interface; (e) applying a patterned resist film on said molybdenum film to provide exposed molybdenum film and unexposed molybdenum film; (f) etching said exposed molybdenum film to define the molybdenum resistor and expose a portion of said aluminum-molybdenum, etch-stop interface; and (g) oxidizing said exposed aluminum-molybdenum, etch-stop interface, whereby the aluminum-molybdenum, etch-stop interface protects the patterned superconductor film and the support and increases processing margins for the etch time.
Claim 2
Independent Claim
130 words
A method for preparing molybdenum resistors in a superconductor integrated circuit; said method comprising: (a) depositing superconductor film on a support; (b) patterning said superconductor film to provide a patterned superconductor and exposed support; (c) applying an aluminum film on said superconductor film and said exposed support; (d) applying a molybdenum film on said aluminum film to provide an aluminum-molybdenum, etch-stop interface; (e) applying a patterned resist film on said molybdenum film to provide exposed molybdenum film and unexposed molybdenum film; (f) etching said exposed molybdenum film to define the molybdenum resistor and expose a portion of said aluminum-molybdenum, etch-stop interface; and (g) oxidizing said exposed aluminum-molybdenum, etch-stop interface, whereby the aluminum-molybdenum, etch-stop interface protects the patterned superconductor film and the support and increases processing margins for the etch time.
Claim 3
Dependent Claim
21 words
The method of claim 1, wherein said etching of said exposed molybdenum film is by reactive ion etching or plasma etching.
Claim 4
Dependent Claim
18 words
The method of claim 2, wherein said etching of said exposed molybdenum film is by reactive ion etching.
Claim 5
Dependent Claim
17 words
The method of claim 2, wherein said etching of said exposed molybdenum film is by plasma etching.
Claim 6
Dependent Claim
29 words
The method of claim 1, wherein said oxidizing said exposed aluminum-molybdenum etch stop interface is by exposing said interface to a plasma containing at least 25 volume percent oxygen.
Claim 7
Dependent Claim
18 words
The method of claim 5, wherein said plasma contains 25-75 volume percent oxygen and 25-75 volume percent argon.
Claim 8
Dependent Claim
13 words
The method of claim 1, wherein said aluminum film is 10-200 Angstroms thick.
Claim 9
Dependent Claim
14 words
The method of claim 1, wherein said aluminum film is about 30-40 Angstroms thick.
Claim 10
Dependent Claim
80 words
A molybdenum resistor configuration for a superconductor integrated circuit; said resistor comprising: (a) a support; (b) areas of superconductor film covering portions of said support; (c) a 10-200 Angstroms thick aluminum film on said areas of superconductor film; (d) an aluminum-molybdenum etch stop interface on said aluminum film; (e) a molybdenum film on said aluminum-molybdenum etch stop interface; and (f) an aluminum oxide film on said support covering portions of said support not covered by said areas of superconductor film.
Claim 11
Dependent Claim
80 words
A molybdenum resistor configuration for a superconductor integrated circuit; said resistor comprising: (a) a support; (b) areas of superconductor film covering portions of said support; (c) a 10-200 Angstroms thick aluminum film on said areas of superconductor film; (d) an aluminum-molybdenum etch stop interface on said aluminum film; (e) a molybdenum film on said aluminum-molybdenum etch stop interface; and (f) an aluminum oxide film on said support covering portions of said support not covered by said areas of superconductor film.
Claim 12
Dependent Claim
14 words
The resistor of claim 9, wherein said aluminum film is about 30-40 Angstroms thick.