Amorphous silicon photo sensor with blocking diode
Abstract
Abstract An image sensor array comprises an insulating substrate, a plurality of individual electrodes formed on the substrate, a plurality of blocking diodes formed on the respective individual electrodes, a plurality of photo diodes formed on the blocking diodes to form a plurality of series conections of a blocking diode and a photo diode, a plural number of common electrodes of a transparent conductor material, each of the common electrodes covering one of the photo diodes on the same individual electrodes, and a filter covering portions of the common electrodes above the photo diodes. A photo-shielding layer of metal, amorphous silicon, amorphous germanium or amorphous silicon germanium may be interposed between the blocking diode and the photo diode.
Inventors
- 👤 Hiroyuki Uchida
- 👤 Setsuo Kaneko
- 👤 Toshio Okubo
Bibliographic Details
Claims Analysis
Total Claims: 9References Cited (Backward Citations)
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