US4902635A
Expired / Lapsed
US
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Method for production of compound semicondutor devices
Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1988-03-31
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Granted: 1990-02-20
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Expires: 2008-03-31
Abstract
Abstract This invention is related to the method for production of semiconductor devices suitable for increasing the integration density of semiconductor integrated circuits, especially GaAs semiconductor IC devices. This invention uses no third wiring metal, contact hole or through hole for connection between the Schottky junction and ohmic electrodes formed on the GaAs semiconductor substrate required in the conventional technology, but provides the method for direct connection between the two electrodes stated above by means of vapor deposition, ion implantation, sputtering, CVD, plasma CVD, dry etching and wet etching. Since the application of this invention enables the two electrodes stated above to be directly connected with high yield, the element area at the connecting portion can be reduced to less than half as compared with the same required in the conventional method, the total element area can be reduced greatly.
Inventors
- 👤 Yoshinori Imamura
- 👤 Masaru Miyazaki
- 👤 Akihisa Terano
- 👤 Nobutoshi Matsunaga
- 👤 Hiroshi Yanazawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 02:55
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10D; H10D64/00; H10D64/20; H10D64/23; H10D64/251; H10D64/258; H10D64/27; H10D64/311; H10D64/411; H10D84/00; H10D84/01; H10D84/02; H10D84/05; H10W20/01; H10W20/031; H10W20/056; H10W20/058
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
177 words
A method for producing compound semiconductor devices which comprises: forming Schottky junction electrodes made of refractory metal on a semiconductor substrate; forming side walls consisting of a first insulating film adjacent to each side of said Schottky junction electrodes; selectively forming an N or P type active layer partially on the top surface of the said semiconductor; covering the whole surface of said semiconductor substrate with a second insulating film; providing openings in the said second insulating film above first predetermined portions of the said N or P type active layer and continuous openings above second predetermined portions of said N or P type active layer and above said Schottky junction electrodes; coating an ohmic electrode material for an ohmic junction with said N or P type active layers on the whole surface of the said semiconductor substrate; lifting-off the ohmic electrode portion coated on other than said opening; and alloying said ohmic electrode to the N or P type active layer and the Schottky junction electrodes at said openings to provide a direct ohmic junction therebetween.
Claim 2
Independent Claim
177 words
A method for producing compound semiconductor devices which comprises: forming Schottky junction electrodes made of refractory metal on a semiconductor substrate; forming side walls consisting of a first insulating film adjacent to each side of said Schottky junction electrodes; selectively forming an N or P type active layer partially on the top surface of the said semiconductor; covering the whole surface of said semiconductor substrate with a second insulating film; providing openings in the said second insulating film above first predetermined portions of the said N or P type active layer and continuous openings above second predetermined portions of said N or P type active layer and above said Schottky junction electrodes; coating an ohmic electrode material for an ohmic junction with said N or P type active layers on the whole surface of the said semiconductor substrate; lifting-off the ohmic electrode portion coated on other than said opening; and alloying said ohmic electrode to the N or P type active layer and the Schottky junction electrodes at said openings to provide a direct ohmic junction therebetween.
Claim 3
Dependent Claim
29 words
The method of claim 1 in which said second insulating film consists of at least one material for allowing selective isotropic etching with reference to said first insulating film.
Claim 4
Dependent Claim
45 words
The method of claim 1 in which said first insulating film consists of at least one of silicon nitride or silicon oxynitride and said second insulating film consists of at least one material selected from the group of silicon dioxide, PSG glass and BPSG glass.
Claim 5
Dependent Claim
40 words
The method of claim 1 in which said first insulating film consists of boron nitride and said second insulating film consists of at least one material selected from the group of PSG glass, BPSG glass, silicon oxynitride and silicon dioxide.
Claim 6
Dependent Claim
44 words
The method of claim 1 in which said first insulating film consists of at least one material selected from the group of silicon dioxide, silicon nitride, silicon oxynitride, boron nitride, PSG glass and BPSG glass, and said second insulating film consists of aluminum nitride.
Claim 7
Independent Claim
215 words
A method for producing compound semiconductor devices which comprises: depositing sidewall material consisting of a first insulating material in a tapered shape adjacent to each side of Schottky junction electrodes made of refractory metal on a semiconductor substrate; selectively forming an N or P type active layer partially on said semiconductor top surface, said selectively forming excludes the portions containing said Schottky junction electrodes; covering the entire surface of said semiconductor substrate with a second insulating film; coating a photoresist on said second insulating film; providing a continuous opening in said photoresist above predetermined portions of said N or P type active layer and above said Schottky junction electrodes; removing the said second insulating film exposed at said opening using said photoresist as a mask; depositing an ohmic electrode material on the entire surface of said semiconductor substrate; lifting-off the ohmic electrode portions, which are coated on other than said opening by removing said photoresist; and alloying said ohmic electrode to the N or P type active layer and Schottky junction electrodes, thereby providing a direct junction between said N or P type active layer and said Schottky electrodes without using conventional contact holes and wiring, wherein the ohmic electrode overriding the Schottky junction electrode tapered sidewalls enables a high yield connection to be achieved.
Claim 8
Independent Claim
215 words
A method for producing compound semiconductor devices which comprises: depositing sidewall material consisting of a first insulating material in a tapered shape adjacent to each side of Schottky junction electrodes made of refractory metal on a semiconductor substrate; selectively forming an N or P type active layer partially on said semiconductor top surface, said selectively forming excludes the portions containing said Schottky junction electrodes; covering the entire surface of said semiconductor substrate with a second insulating film; coating a photoresist on said second insulating film; providing a continuous opening in said photoresist above predetermined portions of said N or P type active layer and above said Schottky junction electrodes; removing the said second insulating film exposed at said opening using said photoresist as a mask; depositing an ohmic electrode material on the entire surface of said semiconductor substrate; lifting-off the ohmic electrode portions, which are coated on other than said opening by removing said photoresist; and alloying said ohmic electrode to the N or P type active layer and Schottky junction electrodes, thereby providing a direct junction between said N or P type active layer and said Schottky electrodes without using conventional contact holes and wiring, wherein the ohmic electrode overriding the Schottky junction electrode tapered sidewalls enables a high yield connection to be achieved.
Claim 9
Dependent Claim
29 words
The method of claim 6 in which said second insulating film consists of at least one material for allowing selective isotropic etching with reference to said first insulating film.
Claim 10
Dependent Claim
45 words
The method of claim 6 in which said first insulating film consists of at least one of silicon nitride or silicon oxynitride and said second insulating film consists of at least one material selected from the group of silicon dioxide, PSG glass and BPSG glass.
Claim 11
Dependent Claim
40 words
The method of claim 6 in which said first insulating film consists of boron nitride and said second insulating film consists of at least one material selected from the group of PSG glass, BPSG glass, silicon oxynitride and silicon dioxide.
Claim 12
Dependent Claim
44 words
The method of claim 6 in which said first insulating film consists of at least one material selected from the group of silicon dioxide, silicon nitride, silicon oxynitride, boron nitride, PSG glass and BPSG glass, and said second insulating film consists of aluminum nitride.
Claim 13
Dependent Claim
33 words
The method of claim 6 wherein the photoresist is removed by immersing in resist removing agent and where the alloying step is carried out by heating the semiconductor device in a nitrogen atmosphere.
Claim 14
Dependent Claim
23 words
The method of claim 7 wherein the second insulating film is removed by a combination of anisotropic dry etching and isotropic wet etching.
Claim 15
Dependent Claim
67 words
The method of claim 7 in which selective isotropic etching forms disconnected portions of said ohmic electrode material deposited on the top surface of said substrate to facilitate removal of said ohmic electrode material portions on said photoresist, the first disconnected portion consists of said ohmic electrode material deposited on said opening and the second disconnected portion of said ohmic electrode material is deposited on said photoresist.
Claim 16
Independent Claim
274 words
A method for producing compound semiconductor devices which comprises: forming Schottky junction electrodes by depositing refractory metal over an entire semi-insulating GaAs substrate and applying photoresist and dry etching; depositing first insulating material on the said substrate and Schottky junction electrodes, and anisotropic dry etching to form tapered side walls consisting of said first insulating material adjacent to each side of the said Schottky junction electrodes; selectively forming an N or P type active layer partially on the top surface of said substrate by ion implantation with photoresist as the mask; covering the entire top surface of said semiconductor substrate with a second insulating film, said second insulating film consists of a material for allowing selective isotropic etching with reference to said first insulating material; coating a photoresist on said second insulating film; providing at least one continuous opening in said photoresist above predetermined portions of said N or P type active layer and above said Schottky junction electrodes; removing the said second insulating film at said opening using anisotropic dry etching and isotropic wet etching with said photoresist as a mask; depositing an ohmic electrode material on the entire top surface of said substrate; lifting off ohmic electrode portions which are coated on other than said opening by removing said photoresist; and alloying said ohmic electrode to the N or P type active layer and Schottky junction electrodes, thereby providing a direct junction between said N or P type active layer and said Schottky junction electrodes without using conventional contact holes and wiring, wherein the ohmic electrode overriding the Schottky junction electrodes tapered side walls enables a high yield connection to be achieved.
Claim 17
Independent Claim
274 words
A method for producing compound semiconductor devices which comprises: forming Schottky junction electrodes by depositing refractory metal over an entire semi-insulating GaAs substrate and applying photoresist and dry etching; depositing first insulating material on the said substrate and Schottky junction electrodes, and anisotropic dry etching to form tapered side walls consisting of said first insulating material adjacent to each side of the said Schottky junction electrodes; selectively forming an N or P type active layer partially on the top surface of said substrate by ion implantation with photoresist as the mask; covering the entire top surface of said semiconductor substrate with a second insulating film, said second insulating film consists of a material for allowing selective isotropic etching with reference to said first insulating material; coating a photoresist on said second insulating film; providing at least one continuous opening in said photoresist above predetermined portions of said N or P type active layer and above said Schottky junction electrodes; removing the said second insulating film at said opening using anisotropic dry etching and isotropic wet etching with said photoresist as a mask; depositing an ohmic electrode material on the entire top surface of said substrate; lifting off ohmic electrode portions which are coated on other than said opening by removing said photoresist; and alloying said ohmic electrode to the N or P type active layer and Schottky junction electrodes, thereby providing a direct junction between said N or P type active layer and said Schottky junction electrodes without using conventional contact holes and wiring, wherein the ohmic electrode overriding the Schottky junction electrodes tapered side walls enables a high yield connection to be achieved.
Claim 18
Dependent Claim
67 words
The method of claim 14 in which selective isotropic etching forms disconnected portions of said ohmic electrode material deposited on the top surface of said substrate to facilitate removal of said ohmic electrode material portions on said photoresist, the first disconnected portion consists of said ohmic electrode material deposited on said opening and the second disconnected portion of said ohmic electrode material is deposited on said photoresist.
References Cited (Backward Citations)
US4353935A
Cited
US4149307A
Cited
US4201997A
Cited
EP0005351A1
Cited
JPS5681955A
Cited
JPS5760854A
Cited
US4628338A
Cited
US4546540A
Cited
US4532004A
Cited
JPS6048509A
Cited
JPS6054480A
Cited
JPS6156462A
Cited
US4777517A
Cited
US4711858A
Cited
US4757033A
Cited
US4701646A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-02-19 | 1993-08-21 | 1994-02-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-19 | 1997-08-21 | 1998-02-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-19 | 2001-08-21 | 2002-02-20 | $7700.00 | Window Closed / Lapsed |