US4900938A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of treating photoresists
Assignee: Ushio Denki KK
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Filing: 1989-04-12
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Granted: 1990-02-13
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Expires: 2009-04-12
Abstract
Abstract A method of treating positive photoresist materials applied on a semiconductor wafer placed on a support, which meets the demand for high-speed treatment and improvement in heat-resistance and plasma-resistance of the developed positive photoresist image. The developed positive photoresist image is exposed to radiant lights including ultraviolet rays in an chamber filled with gas in which oxygen and/or moisture are reduced or not included.
Inventors
- 👤 Shinji Suzuki
- 👤 Hiroko Suzuki
- 👤 Tetsuji Arai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 19:14
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/20; G03F7/2022; G03F7/2024
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
164 words
An apparatus for treating a developed positive photoresist image on a semiconductor wafer comprising: an ultraviolet radiation source composed of a metal vapor lamp or a metal halide vapor lamp and a mirror; a treating chamber having: a window to permit the radiant light from said ultraviolet radiation source to pass into said treating chamber; an intake to permit inactive gas to be drawn into said treating chamber; an exhaust hole to permit said inactive gas to be exhausted from said treating chamber; a porous plate placed within said treating chamber to separate said window and said intake from said exhaust hole; a support for a semiconductor wafer having a developed positive photoresist image thereon provided with temperature control mechanism within said treating chamber; wherein the radiant light is projected to a developed positive photoresist image on a semiconductor wafer through a window and a porous plate and wherein inactive gas is directed from an intake to an exhaust hole through a porous plate.
Claim 2
Independent Claim
164 words
An apparatus for treating a developed positive photoresist image on a semiconductor wafer comprising: an ultraviolet radiation source composed of a metal vapor lamp or a metal halide vapor lamp and a mirror; a treating chamber having: a window to permit the radiant light from said ultraviolet radiation source to pass into said treating chamber; an intake to permit inactive gas to be drawn into said treating chamber; an exhaust hole to permit said inactive gas to be exhausted from said treating chamber; a porous plate placed within said treating chamber to separate said window and said intake from said exhaust hole; a support for a semiconductor wafer having a developed positive photoresist image thereon provided with temperature control mechanism within said treating chamber; wherein the radiant light is projected to a developed positive photoresist image on a semiconductor wafer through a window and a porous plate and wherein inactive gas is directed from an intake to an exhaust hole through a porous plate.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-02-12 | 1993-08-14 | 1994-02-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-02-12 | 1997-08-14 | 1998-02-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-02-12 | 2001-08-14 | 2002-02-13 | $7700.00 | Window Closed / Lapsed |