Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
105 words
A thin film electroluminescent laminate comprising: (a) a thin film layer of electroluminescent material; (b) a first insulator stack comprising a high capacitance insulator layer and a thin film layer of silicon oxynitride, the silicon oxynitride layer being placed in contact with a first side of the thin film layer of electroluminescent material; and (c) a second insulator stack situated on a second side of the layer of thin film electroluminescent material opposite the first insulator stack and comprising a high capacitance insulator layer placed in contact with said second side of said thin film layer of electroluminescent material and a layer of silicon oxynitride.
Claim 2
Dependent Claim
105 words
A thin film electroluminescent laminate comprising: (a) a thin film layer of electroluminescent material; (b) a first insulator stack comprising a high capacitance insulator layer and a thin film layer of silicon oxynitride, the silicon oxynitride layer being placed in contact with a first side of the thin film layer of electroluminescent material; and (c) a second insulator stack situated on a second side of the layer of thin film electroluminescent material opposite the first insulator stack and comprising a high capacitance insulator layer placed in contact with said second side of said thin film layer of electroluminescent material and a layer of silicon oxynitride.
Claim 3
Dependent Claim
28 words
The thin film electroluminescent laminate of claim 1 wherein the first insulator stack is placed against the last grown side of the thin film layer of electroluminescent material.
Claim 4
Dependent Claim
17 words
The TFEL laminate of claim 1 wherein the high capacitance insulator layers are made of barium tantalate.
Claim 5
Dependent Claim
46 words
A thin film electroluminescent laminate structure comprising a layer of thin film electroluminescent material sandwiched between a pair of multiple layer insulators wherein only one of said multiple layer insulators includes a layer of silicon oxynitride in contact with said layer of thin film electroluminescent material.
Claim 6
Dependent Claim
46 words
A thin film electroluminescent laminate structure comprising a layer of thin film electroluminescent material sandwiched between a pair of multiple layer insulators wherein only one of said multiple layer insulators includes a layer of silicon oxynitride in contact with said layer of thin film electroluminescent material.
Claim 7
Dependent Claim
34 words
The thin film electroluminescent laminate structure of claim 4 wherein the pair of multiple layer insulators each include a first layer of high capacitance material and a second layer of material having high resistivity.
Claim 8
Dependent Claim
31 words
The thin film electroluminescent laminate structure of claim 4 wherein the layer of silicon oxynitride is in contact with the last grown side of the layer of thin film electroluminescent material.
Claim 9
Independent Claim
113 words
A method of fabricating a thin film electroluminescent device comprising the steps of: (a) placing a first electrode layer on a substrate; (b) depositing a first highly resistive insulator layer on the first electrode layer; (c) depositing a high capacitance insulator layer on top of the first highly resistive insulative layer; (d) forming a layer of electroluminescent material on the high capacitance insulator layer; (e) depositing a second highly resistive insulative layer on top of the layer of electroluminescent material; (f) depositing a second high capacitance insulative layer on top of the second highly resistive insulative layer; and (g) placing a second electrode layer on top of the second high capacitance insulative layer.
Claim 10
Independent Claim
113 words
A method of fabricating a thin film electroluminescent device comprising the steps of: (a) placing a first electrode layer on a substrate; (b) depositing a first highly resistive insulator layer on the first electrode layer; (c) depositing a high capacitance insulator layer on top of the first highly resistive insulative layer; (d) forming a layer of electroluminescent material on the high capacitance insulator layer; (e) depositing a second highly resistive insulative layer on top of the layer of electroluminescent material; (f) depositing a second high capacitance insulative layer on top of the second highly resistive insulative layer; and (g) placing a second electrode layer on top of the second high capacitance insulative layer.
Claim 11
Dependent Claim
17 words
The method of claim 7 wherein the second highly resistive insulative layer is formed from silicon oxynitride.