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US4897319A Expired / Lapsed US ⏱️ 0.0 years remaining

TFEL device having multiple layer insulators

Assignee: Planar Systems Inc
•
Filing: 1988-07-19
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Granted: 1990-01-30
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Expires: 2008-07-19
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Abstract

Abstract A structure for a thin-film electroluminescent (TFEL) device includes an EL phosphor layer sandwiched between a pair of insulator stacks, at least one of the stacks including a thin layer of silicon oxynitride in direct contact with the last grown side of the phosphor layer and a second thicker layer of barium tantalate. The silicon oxynitride layer has high resistivity, and when combined with a second insulator having a high dielectric constant, such as barium tantalate, produces an increase in luminance of the phosphor layer at conventional voltages. Both insulator stacks may include a silicon oxynitride layer, but this layer is in contact only with the last grown side of the EL phosphor layer. On the other side of the EL phosphor layer the high dielectric constant layer lies between the silicon oxynitride and the EL phosphor layer.

Inventors

  • 👤 Sey-Shing Sun

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 09:48
CPC Classifications
H; H05; H05B; H05B33/00; H05B33/12; H05B33/22; Y; Y10; Y10S; Y10S428/00; Y10S428/917

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 105 words
A thin film electroluminescent laminate comprising: (a) a thin film layer of electroluminescent material; (b) a first insulator stack comprising a high capacitance insulator layer and a thin film layer of silicon oxynitride, the silicon oxynitride layer being placed in contact with a first side of the thin film layer of electroluminescent material; and (c) a second insulator stack situated on a second side of the layer of thin film electroluminescent material opposite the first insulator stack and comprising a high capacitance insulator layer placed in contact with said second side of said thin film layer of electroluminescent material and a layer of silicon oxynitride.
Claim 2
Dependent Claim 105 words
A thin film electroluminescent laminate comprising: (a) a thin film layer of electroluminescent material; (b) a first insulator stack comprising a high capacitance insulator layer and a thin film layer of silicon oxynitride, the silicon oxynitride layer being placed in contact with a first side of the thin film layer of electroluminescent material; and (c) a second insulator stack situated on a second side of the layer of thin film electroluminescent material opposite the first insulator stack and comprising a high capacitance insulator layer placed in contact with said second side of said thin film layer of electroluminescent material and a layer of silicon oxynitride.
Claim 3
Dependent Claim 28 words
The thin film electroluminescent laminate of claim 1 wherein the first insulator stack is placed against the last grown side of the thin film layer of electroluminescent material.
Claim 4
Dependent Claim 17 words
The TFEL laminate of claim 1 wherein the high capacitance insulator layers are made of barium tantalate.
Claim 5
Dependent Claim 46 words
A thin film electroluminescent laminate structure comprising a layer of thin film electroluminescent material sandwiched between a pair of multiple layer insulators wherein only one of said multiple layer insulators includes a layer of silicon oxynitride in contact with said layer of thin film electroluminescent material.
Claim 6
Dependent Claim 46 words
A thin film electroluminescent laminate structure comprising a layer of thin film electroluminescent material sandwiched between a pair of multiple layer insulators wherein only one of said multiple layer insulators includes a layer of silicon oxynitride in contact with said layer of thin film electroluminescent material.
Claim 7
Dependent Claim 34 words
The thin film electroluminescent laminate structure of claim 4 wherein the pair of multiple layer insulators each include a first layer of high capacitance material and a second layer of material having high resistivity.
Claim 8
Dependent Claim 31 words
The thin film electroluminescent laminate structure of claim 4 wherein the layer of silicon oxynitride is in contact with the last grown side of the layer of thin film electroluminescent material.
Claim 9
Independent Claim 113 words
A method of fabricating a thin film electroluminescent device comprising the steps of: (a) placing a first electrode layer on a substrate; (b) depositing a first highly resistive insulator layer on the first electrode layer; (c) depositing a high capacitance insulator layer on top of the first highly resistive insulative layer; (d) forming a layer of electroluminescent material on the high capacitance insulator layer; (e) depositing a second highly resistive insulative layer on top of the layer of electroluminescent material; (f) depositing a second high capacitance insulative layer on top of the second highly resistive insulative layer; and (g) placing a second electrode layer on top of the second high capacitance insulative layer.
Claim 10
Independent Claim 113 words
A method of fabricating a thin film electroluminescent device comprising the steps of: (a) placing a first electrode layer on a substrate; (b) depositing a first highly resistive insulator layer on the first electrode layer; (c) depositing a high capacitance insulator layer on top of the first highly resistive insulative layer; (d) forming a layer of electroluminescent material on the high capacitance insulator layer; (e) depositing a second highly resistive insulative layer on top of the layer of electroluminescent material; (f) depositing a second high capacitance insulative layer on top of the second highly resistive insulative layer; and (g) placing a second electrode layer on top of the second high capacitance insulative layer.
Claim 11
Dependent Claim 17 words
The method of claim 7 wherein the second highly resistive insulative layer is formed from silicon oxynitride.

References Cited (Backward Citations)

US4188565A Cited
US4547703A Cited
US4721631A Cited
US4774435A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-01-29 1993-07-31 1994-01-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-01-29 1997-07-31 1998-01-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-01-29 2001-07-31 2002-01-30 $7700.00 Window Closed / Lapsed

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