Patent US4885260A successfully refreshed from Google Patents.
US4885260A
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Method of laser enhanced vapor phase growth for compound semiconductor
Assignee: Panasonic Holdings Corp
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Filing: 1988-02-16
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Granted: 1989-12-05
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Expires: 2008-02-16
Abstract
Abstract Disclosed is a vapor phase growth method of compound semiconductor in which source gases are introduced into an epitaxial growth reactor at fixed feed rates, the substrate surface is irradiated with light, and the light irradiation is turned on and off, or the intensity of light irradiation is increased or decreased, so that an epitaxial layer structure changes in the composition, and the carrier concentration and conductivity type abruptly or continuously change in the growth film in the direction of the thickness.
Inventors
- 👤 Yuzaburo Ban
- 👤 Masaya Manno
- 👤 Minoru Kubo
- 👤 Mototsugu Morisaki
- 👤 Mototsugu Ogura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 04:06
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/24; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S148/00; Y10S148/048; Y10S148/065; Y10S148/072; Y10S148/094; Y10S438/00; Y10S438/914; Y10S438/925; Y10S438/936
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
145 words
A method for producing a compound semiconductor multilayer structure by vapor phase growth comprising the steps of: continuously supplying and maintaining compound gases during the growth of each layer, each of said gases consisting of at least a constituent element of epitaxial layers to be grown on a surface of a substrate heated to a desired growth temperature; growing a first compound epitaxial layer on said surface of said substrate by irradiating said surface of said substrate with light having a predetermined intensity; growing a second compound epitaxial layer on a surface of said first compound epitaxial layer by irradiating the said surface of said first compound epitaxial layer with light while gradually increasing or decreasing the intensity of said light or by switching on and off said light whereby the composition of the said second compound epitaxial layer changes abruptly or continuously during growth.
Claim 2
Independent Claim
145 words
A method for producing a compound semiconductor multilayer structure by vapor phase growth comprising the steps of: continuously supplying and maintaining compound gases during the growth of each layer, each of said gases consisting of at least a constituent element of epitaxial layers to be grown on a surface of a substrate heated to a desired growth temperature; growing a first compound epitaxial layer on said surface of said substrate by irradiating said surface of said substrate with light having a predetermined intensity; growing a second compound epitaxial layer on a surface of said first compound epitaxial layer by irradiating the said surface of said first compound epitaxial layer with light while gradually increasing or decreasing the intensity of said light or by switching on and off said light whereby the composition of the said second compound epitaxial layer changes abruptly or continuously during growth.
Claim 3
Dependent Claim
16 words
A method of claim 1, wherein one of said first and second predetermined intensities is zero.
Claim 4
Dependent Claim
17 words
A method of claim 1, wherein said compound gases are selected from organo-metallic compounds, hybrides, and chlorides.
Claim 5
Dependent Claim
38 words
A method of claim 1, wherein a light source used for said irradiations is at least one of an excimer laser, an Ar laser, a Co 2 laser, an ultraviolet lamp, an He-Cd laser and a YAG laser.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-12-04 | 1993-06-05 | 1993-12-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-12-04 | 1997-06-05 | 1997-12-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-12-04 | 2001-06-05 | 2001-12-05 | $7700.00 | Window Closed / Lapsed |