Patent US4884112A successfully refreshed from Google Patents.
US4884112A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Silicon light-emitting diode with integral optical waveguide
Assignee: United States Department of the Air Force
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Filing: 1988-03-18
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Granted: 1989-11-28
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Expires: 2008-03-18
Abstract
Abstract The invention comprises integral all silicon light sources and 3-D optical waveguides which combine the functions of room temperature optical emission and optical signal routing. Several light emitting electrooptical silicon devices are herein disclosed. Light emitted by silicon LEDs is concentrated in channels (waveguides) and is directed to desired locations on a silicon wafer. In all of the devices, the light source is electrically actuated by a forward biased p-n junction and the light intensity can be electrically controlled by varying the applied current.
Inventors
- 👤 Joseph P. Lorenzo
- 👤 Richard A. Soref
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:02
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/826; G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/12004; G02B6/24; G02B6/42
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
115 words
An electrooptic silicon device having a longitudinal axis comprising: a first doped silicon layer; a second doped silicon layer positioned upon said first layer wherein said second silicon layer is formed into an optical waveguide; a third doped silicon layer positioned at said optical waveguide wherein said third doped silicon layer forms a p-n junction with said second doped silicon layer; a first electric contact electrically coupled to said second silicon layer; a second electric contact electrically coupled to said third silicon layer; and a power source for forward biasing said p-n junction through said first and second electrical contacts in order to cause said p-n junction to emit light directly into said optical waveguide.
Claim 2
Dependent Claim
115 words
An electrooptic silicon device having a longitudinal axis comprising: a first doped silicon layer; a second doped silicon layer positioned upon said first layer wherein said second silicon layer is formed into an optical waveguide; a third doped silicon layer positioned at said optical waveguide wherein said third doped silicon layer forms a p-n junction with said second doped silicon layer; a first electric contact electrically coupled to said second silicon layer; a second electric contact electrically coupled to said third silicon layer; and a power source for forward biasing said p-n junction through said first and second electrical contacts in order to cause said p-n junction to emit light directly into said optical waveguide.
Claim 3
Dependent Claim
35 words
The electrooptic silicon device of claim 1 further comprising a dielectric layer positioned between said first and second doped silicon layers in order to help confine light emitted by said p-n junction to said waveguide.
Claim 4
Dependent Claim
26 words
The electrooptic silicon device of claim 2 wherein said dielectric layer is cut back in order to electrically connect said first and second doped silicon layers.
Claim 5
Dependent Claim
30 words
The electrooptic silicon device of claim 1 wherein said first doped silicon layer comprises n+ doped crystalline silicon and wherein said second doped silicon layer comprises n doped crystalline silicon.
Claim 6
Dependent Claim
38 words
The electrooptic silicon device of claim 1 wherein said optical waveguide is further characterized by an etched facet adjacent to said p-n junction which directs light emitted by said p-n junction in a preferred direction along said waveguide.
Claim 7
Dependent Claim
38 words
The electrooptic silicon device of claim 1 wherein said optical waveguide is further characterized by a cleaved end adjacent to said p-n junction which directs light emitted by said p-n junction in a preferred direction along said waveguide.
Claim 8
Dependent Claim
40 words
The electrooptic silicon device of claim 1 wherein said optical waveguide is further characterized by an active reflective surface adjacent to said p-n junction which selectively directs light emitted by said p-n junction in a preferred direction along said waveguide.
Claim 9
Dependent Claim
26 words
The electrooptic silicon device of claim 1 wherein said optical waveguide is further characterized by multiple exit ports for directing light away from said p-n junction.
Claim 10
Dependent Claim
30 words
The electrooptic silicon device of claim 8 wherein said optical waveguide is further characterized by a second p-n junction which is used to switch light between said multiple exit ports.
Claim 11
Dependent Claim
34 words
The electrooptic silicon device of claim 1 wherein said p-n junction is positioned transverse to said longitudinal propagation axis of said waveguide in order to direct light in substantially one direction along said waveguide.
Claim 12
Dependent Claim
94 words
A light emitting electrooptic silicon device comprising: a substrate; a crystalline silicon optical waveguide positioned on said substrate for confining and directing optical signals; a silicon p-n junction integral with said waveguide for injecting optical signals directly into said optical waveguide; a first electric contact electrically coupled to said p-n junction; and a second electric contact electrically coupled to said p-n junction; and a power source for forward biasing said p-n junction through said first and second electrical contacts in order to cause said p-n junction to emit light directly into said optical waveguide.
Claim 13
Dependent Claim
94 words
A light emitting electrooptic silicon device comprising: a substrate; a crystalline silicon optical waveguide positioned on said substrate for confining and directing optical signals; a silicon p-n junction integral with said waveguide for injecting optical signals directly into said optical waveguide; a first electric contact electrically coupled to said p-n junction; and a second electric contact electrically coupled to said p-n junction; and a power source for forward biasing said p-n junction through said first and second electrical contacts in order to cause said p-n junction to emit light directly into said optical waveguide.
Claim 14
Dependent Claim
71 words
The light emitting electrooptic silicon device of claim 11 wherein the substrate further comprises: a first doped silicon layer; a second doped silicon layer positioned upon said first doped silicon layer and wherein said second silicon layer is formed into an optical waveguide; and a third doped silicon layer position at said optical waveguide wherein said third doped silicon layer forms said silicon p-n junction with said second doped silicon layer.
Claim 15
Dependent Claim
38 words
The light emitting electrooptic silicon device of claim 12 further comprising a dielectric layer positioned between said first and second doped silicon layers in order to help confine light emitted by said p-n junction to said optical waveguide.
Claim 16
Dependent Claim
34 words
The electrooptic silicon device of claim 12 wherein said p-n junction is positioned transverse to said longitudinal propagation axis of said waveguide in order to direct light in substantially one direction along said waveguide.
Claim 17
Dependent Claim
28 words
The light emitting electrooptic silicon device of claim 13 wherein said dielectric layer is cut back in order to electrically connect said first and second doped silicon layers.
Claim 18
Dependent Claim
32 words
The light emitting electrooptic silicon device of claim 12 wherein said first doped silicon layer comprises n+ doped crystalline silicon and wherein said second doped silicon layer comprises n doped crystalline silicon.
Claim 19
Dependent Claim
40 words
The light emitting electrooptic silicon device of claim 11 wherein said optical waveguide is further characterized by an etched facet adjacent to said p-n junction which directs light emitted by said p-n junction in a preferred direction along said waveguide.
Claim 20
Dependent Claim
42 words
The light emitting electrooptic silicon device of claim 11 wherein said optical waveguide is further characterized by an active reflective surface adjacent to said p-n junction which selectively directs light emitted by said p-n junction in a preferred direction along said waveguide.
Claim 21
Dependent Claim
28 words
The light emitting electrooptic silicon device of claim 1 wherein said optical waveguide is further characterized by multiple exit ports for directing light away from said p-n junction.
Claim 22
Dependent Claim
106 words
A light emitting electrooptic silicon device comprising: a substrate; a crystalline silicon optical waveguide positioned on said substrate for confining and directing optical signals; a silicon p-n junction integral with said optical waveguide in order to inject optical signals into said optical waveguide; a first electric contact electrically coupled to said silicon p-n junction; a second electric contact electrically coupled to said silicon p-n junction; and a power source for providing electrical energy to said p-n junction through said first and second electrical contacts in order to cause said p-n junction to emit light having a wavelength greater than 1.1 microns directly into said optical waveguide.
Claim 23
Dependent Claim
106 words
A light emitting electrooptic silicon device comprising: a substrate; a crystalline silicon optical waveguide positioned on said substrate for confining and directing optical signals; a silicon p-n junction integral with said optical waveguide in order to inject optical signals into said optical waveguide; a first electric contact electrically coupled to said silicon p-n junction; a second electric contact electrically coupled to said silicon p-n junction; and a power source for providing electrical energy to said p-n junction through said first and second electrical contacts in order to cause said p-n junction to emit light having a wavelength greater than 1.1 microns directly into said optical waveguide.
Claim 24
Dependent Claim
37 words
An electrooptic device comprising: a waveguide having a transparent spectral region greater than 1.1 microns in wavelength; and a forward biased silicon LED, integral with said waveguide, for producing light therein having wavelengths greater than 1.1 microns.
Claim 25
Dependent Claim
37 words
An electrooptic device comprising: a waveguide having a transparent spectral region greater than 1.1 microns in wavelength; and a forward biased silicon LED, integral with said waveguide, for producing light therein having wavelengths greater than 1.1 microns.
Claim 26
Dependent Claim
13 words
The device of claim 21 wherein said LED comprises a silicon p-n junction.
Claim 27
Dependent Claim
13 words
The device of claim 21 wherein said waveguide is made of crystalline silicon.
Claim 28
Dependent Claim
13 words
The device of claim 22 wherein said waveguide is made of crystalline silicon.
Claim 29
Dependent Claim
12 words
The device of claim 22 wherein said waveguide is made of glass.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-11-27 | 1993-05-29 | 1993-11-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-11-27 | 1997-05-29 | 1997-11-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-11-27 | 2001-05-29 | 2001-11-28 | $7700.00 | Window Closed / Lapsed |