Light emitting and light detecting semiconductor device for interfacing with an optical fiber

Claim 2

A light emitting and light detecting semiconductor device having a light emitting zone and a light detecting zone adaptable for concurrently interfacing with an optical fiber, comprising: a primary region of a first conductivity type; the light detecting and light emitting zones being of a second conductivity type extending into the primary region from a first surface of the primary region, the zones being separated from each other by a separation region, a junction being formed at an interface between each zone and the primary region, the zones having a depth measured from the first surface; and a separation material different from the material of the primary region, the separation material extending into at least a portion of the separation region from the first surface to a depth greater than the depth of either zone, the separation material providing substantial optical isolation between the two zones.

Claim 3

A light emitting and light detecting semiconductor device having a light emitting zone and a light detecting zone adaptable for concurrently interfacing with an optical fiber, comprising: a primary region of a first conductivity type; the light detecting and light emitting zones being of a second conductivity type extending into the primary region from a first surface of the primary region, the zones being separated from each other by a separation region, a junction being formed at an interface between each zone and the primary region, the zones having a depth measured from the first surface; and the device having a groove opening to the first surface between the two zones .Iadd.as part of a structure for providing substantial optical isolation between the two zones, the groove being at least partially filled with a material different from the material of the primary region in order to substantially optically isolate the two zones from each other.Iaddend..

Claim 4

A light emitting and light detecting semiconductor device having a light emitting zone and a light detecting zone adaptable for concurrently interfacing with an optical fiber, comprising: a primary region of a first conductivity type; the light detecting and light emitting zones being of a second conductivity type extending into the primary region from a first surface of the primary region, the zones being separated from each other by a separation region, a junction being formed at an interface between each zone and the primary region, the zones having a depth measured from the first surface; and the device having a groove opening to the first surface between the two zones .Iadd.as part of a structure for providing substantial optical isolation between the two zones, the groove being at least partially filled with a material different from the material of the primary region in order to substantially optically isolate the two zones from each other.Iaddend..

Claim 5

A device as in claim 2 wherein the groove extends to a depth greater than the depth of either zone. .[.4. A semiconductor device as in claim 2 wherein the groove is at least partially filled with a material different from the material of the primary region in order to substantially

Claim 6

optically isolate the two zones from each other..]. 5. A light emitting and light detecting semiconductor device having a light emitting zone and a light detecting zone adaptable for concurrently interfacing with an optical fiber, comprising: a primary region of a first conductivity type; the light detecting and light emitting zones being of a second conductivity type extending into the primary region from a first surface of the primary region, the zones being separated from each other by a separation region, a junction being formed at an interface between each zone and the primary region, the zones having a depth measured from the first surface; .[.and.]..Iadd. a separation material different from the material of the primary region, the separation material extending into at least a portion of the separation region from the first surface to a depth greater than the depth of either zone, the separation material providing substantial optical isolation between the two zones; and .Iaddend. the optical fiber having a port located in proximity to the light detecting and light emitting zones such that at least a portion of any light at the port is received by the light detecting zone and at least a portion of any light emitted by the light emitting zone is received by the port for

Claim 7

optically isolate the two zones from each other..]. 5. A light emitting and light detecting semiconductor device having a light emitting zone and a light detecting zone adaptable for concurrently interfacing with an optical fiber, comprising: a primary region of a first conductivity type; the light detecting and light emitting zones being of a second conductivity type extending into the primary region from a first surface of the primary region, the zones being separated from each other by a separation region, a junction being formed at an interface between each zone and the primary region, the zones having a depth measured from the first surface; .[.and.]..Iadd. a separation material different from the material of the primary region, the separation material extending into at least a portion of the separation region from the first surface to a depth greater than the depth of either zone, the separation material providing substantial optical isolation between the two zones; and .Iaddend. the optical fiber having a port located in proximity to the light detecting and light emitting zones such that at least a portion of any light at the port is received by the light detecting zone and at least a portion of any light emitted by the light emitting zone is received by the port for

Claim 8

transmission over the optical fiber. 6. A semiconductor device as in claims 1, 2, or 5 wherein the light detecting zone is of such a nature that, should the junction between the light detecting zone and the primary region be reverse biased, incoming radiation is absorbed substantially within an electron diffusion length of the junction between the light detecting zone and the primary region, and wherein the light emitting zone is of such a nature that, should the junction between the light emitting zone and the primary region be forward biased, radiation generated at the junction between the light emitting zone and the primary region is emitted substantially at the first surface level of the zone rather than being

Claim 9

substantially absorbed within the zone. 7. A semiconductor device as in claims 1, 2, or 5 wherein the depth of the light detecting zone is on the order of three microns and wherein the depth of the light emitting zone is

Claim 10

on the order of five microns. 8. A semiconductor device as in claims 1, 2, or 5 wherein the primary region and the light emitting zone each have a doping level which is approximately equal to a first doping level and wherein the light detecting zone has a second doping level, the first doping level being approximately two orders of magnitude greater than the

Claim 11

second doping level. 9. A semiconductor device as in claims 1, 2, or 5 wherein the primary region is formed of an N type material and wherein both the light detecting and light emitting zones are formed of a P type

Claim 12

material. 10. A semiconductor device as in claims 1, 2, or 5 wherein the primary region and the light detecting and light emitting zones are formed of a material selected from the group consisting of gallium arsenide and

Claim 13

gallium arsenide phosphide. 11. A semiconductor device as in claims 1, 2, or 5 wherein the primary region further comprises an expitaxial layer adjacent the first surface of the device, the thickness of the layer being

Claim 14

in the range of approximately ten to fifty microns. 12. A semiconductor device as in claims 1, 2, or 5 further comprising: a light detecting zone contact connected to the light detecting zone; a light emitting zone contact connected to the light emitting zone; and a primary region contact connected to the primary region and adapted for

Claim 15

connecting the primary region to a reference potential. 13. A semiconductor device as in claims 1, 2, or 5 further comprising: a dielectric layer covering at least a portion of the first surface; a light detecting zone contact covering at least a portion of the dielectric layer and extending into the light detecting zone with a protrusion having a first surface area which is small in comparison with the first surface area of the light detecting zone; a light emitting zone contact covering at least a portion of the dielectric layer and extending into the light emitting zone with a protrusion having a first surface area which is small in comparison to the first surface

Claim 16

area of the light emitting zone. 14. A semiconductor device as in claims 1, 2, or 5 wherein the primary region has a second surface and wherein a primary region contact is connected to the primary region and covers at least a portion of the second surface, the primary region contact being

Claim 17

adapted for connecting the primary region to a reference potential. 15. A semiconductor device as in claims 1, 2, or 5 wherein the primary region has a second surface oppositely facing the first surface and wherein a primary region contact is connected to the primary region and covers at least a portion of the second surface, the primary region contact being

Claim 18

adapted for connecting the primary region to a reference potential. 16. A semiconductor device as in claims 1, 2, or 5 wherein the zones are separated from each other by a distance approximately five to ten microns.

Claim 20

transmission over the optical fiber. 18. A device as in claims 1, 2, or 5 further comprising positioning means connected to the device, the positioning means being adapted for positioning a port of an optical fiber

Claim 21

in proximity to the light detecting and light emitting zones. 19. A device as in claims 1, 2, or 5 further including an electrical circuit, comprising: an input terminal for receiving input signals having first and second levels; means comprising control means connected between the input terminal and the light emitting zone for permitting the application of a positive voltage to the light emitting zone whenever the first signal level is present at the input terminal; a positive voltage terminal adapted to receive the positive voltage; means connecting the positive voltage terminal to the control means; a negative voltage terminal adapted to receive a negative voltage; means connecting the negative voltage terminal to the light detecting zone; an output terminal; and means connecting the output terminal to the light detecting zone for providing a signal at the output terminal whenever light is received by the light detecting zone while the junction between the light detecting

Claim 22

zone and the primary region is reverse biased. 20. A device as in claims 1, 2, or 5 further including an electrical circuit, comprising: an input terminal for receiving input signals having first and second signal levels; a positive voltage terminal adapted to receive a positive voltage; a negative voltage terminal adapted to receive a negative voltage; means connecting the negative voltage terminal to the light detecting zone; inverter means for converting logic highs to logic lows and vice versa, the inverter means having an input connected to the input terminal, the inverter means also having an output; control means comprising a transistor with a base connected to the output of the inverter means, an emitter adapted for connection to a reference potential, and a collector; means connecting the collector of the transistor to the light emitting zone; means connecting the collector of the transistor to the positive voltage terminal; an amplifier having an input and an output; means connecting the input of the amplifier to the light detecting zone; an output terminal; means connecting the output terminal to the output of the amplifier; and means adaptable for connecting the primary region to the reference potential.