Process for fabricating complimentary semiconductor devices having pedestal structures

Claim 2

A process for fabricating complimentary semiconductor devices having pedestal structures comprising the steps of: providing a first substrate; forming a first dielectric layer on said first substrate; forming a first polysilicon layer on said first dielectric layer; patterning and etching said first polysilicon layer in a predetermined manner; doping said first polysilicon layer with a plurality of conductivity types; forming a second dielectric layer on said first polysilicon layer; forming a second polysilicon layer on said second dielectric layer; patterning and etching said second polysilicon layer in a predetermined manner; doping said second polysilicon layer with a plurality of conductivity types; forming a third dielectric layer on said second polysilicon layer; patterning and forming a plurality of openings through said first, second and third dielectric layers and said first and second polysilicon layers, said openings extending from said first substrate; forming epitaxial regions in said openings; and forming a plurality of contact openings, members of said plurality of contact openings extending to said first polysilicon layer, said second polysilicon layer and said epitaxial regions.

Claim 3

The process of claim 1 wherein the steps of doping the first and second polysilicon layers are performed by ion implantation.

Claim 4

The process of claim 1 wherein a collector, a base and an emitter are formed in each epitaxial region.

Claim 5

The process of claim 3 wherein the base, the collector and the emitter are formed using ion implantation.

Claim 6

The process of claim 3 wherein contact polysilicon is formed in the contact openings, said contact polysilicon further being doped to correspond to the conductivity type of one of the first polysilicon layer, the second polysilicon layer and the epitaxial regions.

Claim 7

The process of claim 5 wherein electrical contacts are formed on the doped contact polysilicon.

Claim 8

The process of claim 3 wherein a fourth dielectric layer is formed on the epitaxial regions and the third dielectric layer.

Claim 9

The process of claim 7 wherein a sidewall spacer dielectric layer is formed on the fourth dielectric layer prior to the formation of the emitter, said sidewall spacer dielectric layer and said fourth dielectric layer further being etched over said epitaxial regions to form sidewall spacers.

Claim 10

The process of claim 8 wherein the fourth dielectric layer and the sidewall spacer dielectric layer are formed simultaneously.

Claim 11

The process of claim 7 further comprising the steps of: forming a dielectric diffusion barrier layer on the fourth dielectric layer; bonding a second substrate on said dielectric diffusion barrier layer; inverting the complimentary semiconductor devices; and removing the first substrate.

Claim 12

The process of claim 10 wherein the diffusion of dielectric layer is comprised of a nitride.

Claim 13

The process of claim 10 wherein the epitaxial regions are etched back a predetermined distance below a first surface of the first dielectric layer following the removal of the first substrate.

Claim 14

The process of claim 12 wherein a sidewall spacer dielectric layer is formed on the epitaxial regions and the first dielectric layer, said sidewall spacer dielectric layer further being etched over said epitaxial regions to form sidewall spacers thereon.

Claim 15

A process for fabricating complimentary semiconductor devices having pedestal structures comprising the steps of: providing a first substrate; forming a first dielectric layer on said first substrate; forming a first polysilicon layer on said first dielectric layer; patterning and etching said first polysilicon layer in a predetermined manner; doping said first polysilicon layer with a plurality of conductivity types; forming a second dielectric layer on said first polysilicon layer; forming a second polysilicon layer on said second dielectric layer; patterning and etching said second polysilicon layer in a predetermined manner; doping said second polysilicon layer with a plurality of conductivity types; forming a third dielectric layer on said second polysilicon layer; patterning and forming a plurality of openings through said first, second and third dielectric layers and said first and second polysilicon layers, said openings extending from said first substrate; forming epitaxial regions in said openings; forming a collector in each epitaxial region during or following the formation thereof; forming a base in each epitaxial region; forming a sidewall spacer dielectric layer on said third dielectric layer and said epitaxial regions; etching said sidewall spacer dielectric layer over said epitaxial regions to form sidewall spacers; forming an emitter in each epitaxial region; forming a plurality of contact openings, members of said plurality of contact openings extending to said first polysilicon layer, said second polysilicon layer and said epitaxial regions; forming contact polysilicon in said plurality of contact openings; doping said contact polysilicon to correspond to the regions of said first polysilicon layer, said second polysilicon layer or said epitaxial regions coupled thereto; and forming a plurality of electrical contacts over said plurality of contact openings on said contact polysilicon.

Claim 16

A process for fabricating complimentary semiconductor devices having pedestal structures comprising the steps of: providing a first substrate; forming a first dielectric layer on said first substrate; forming a first polysilicon layer on said first dielectric layer; patterning and etching said first polysilicon layer in a predetermined manner; doping said first polysilicon layer with a plurality of conductivity types; forming a second dielectric layer on said first polysilicon layer; forming a second polysilicon layer on said second dielectric layer; patterning and etching said second polysilicon layer in a predetermined manner; doping said second polysilicon layer with a plurality of conductivity types; forming a third dielectric layer on said second polysilicon layer; patterning and forming a plurality of openings through said first, second and third dielectric layers and said first and second polysilicon layers, said openings extending from said first substrate; forming epitaxial regions in said openings; forming a collector in each epitaxial region during or following the formation thereof; forming a base in each epitaxial region; forming a sidewall spacer dielectric layer on said third dielectric layer and said epitaxial regions; etching said sidewall spacer dielectric layer over said epitaxial regions to form sidewall spacers; forming an emitter in each epitaxial region; forming a plurality of contact openings, members of said plurality of contact openings extending to said first polysilicon layer, said second polysilicon layer and said epitaxial regions; forming contact polysilicon in said plurality of contact openings; doping said contact polysilicon to correspond to the regions of said first polysilicon layer, said second polysilicon layer or said epitaxial regions coupled thereto; and forming a plurality of electrical contacts over said plurality of contact openings on said contact polysilicon.

Claim 17

The process of claim 14 wherein the step of forming an emitter in each epitaxial region is performed following the step of doping said contact polysilicon.

Claim 18

The process of claim 14 wherein the steps of forming a collector, forming a base, forming an emitter, doping said first and second polysilicon layers and doping said contact polysilicon are performed by ion implantation.

Claim 19

The process of claim 14 wherein the dielectric layers are nitride, oxide or a combination of oxide and nitride.

Claim 20

A process for fabricating complimentary silicon- on-insulator semiconductor devices having pedestal structures comprising the steps of: providing a first substrate; forming a first dielectric layer on said first substrate; forming a first polysilicon layer on said first dielectric layer; patterning and etching said first polysilicon layer in a predetermined manner; doping said first polysilicon layer with a plurality of conductivity types; forming a second dielectric layer on said first polysilicon layer; forming a second polysilicon layer on said second dielectric layer; patterning and etching said second polysilicon layer in a predetermined manner; doping said second polysilicon layer with a plurality of conductivity types; forming a third dielectric layer on said second polysilicon layer; patterning and forming a plurality of openings through said first, second an third dielectric layers and said first and second polysilicon layers, said openings extending from said first substrate; forming epitaxial regions in said openings; forming a collector in each epitaxial region during or following the formation thereof; depositing a fourth dielectric layer on said epitaxial regions and said third dielectric layer; bonding a second substrate on said fourth dielectric layer; inverting said complimentary semiconductor devices; removing said first substrate; forming a base in each epitaxial region; forming a sidewall spacer dielectric layer on said epitaxial regions and said first dielectric layer; etching said sidewall spacer dielectric layer over said epitaxial regions to form sidewall spacers; forming an emitter in each epitaxial region; forming a plurality of contact openings, members of said plurality of contact openings extending to said first polysilicon layer, said second polysilicon layer and said epitaxial regions; forming contact polysilicon in said plurality of contact openings; doping said contact polysilicon to correspond to the regions of said first polysilicon layer, said second polysilicon layer or said epitaxial regions coupled thereto; and forming a plurality of electrical contacts over said plurality of contact openings on said contact polysilicon.

Claim 21

A process for fabricating complimentary silicon- on-insulator semiconductor devices having pedestal structures comprising the steps of: providing a first substrate; forming a first dielectric layer on said first substrate; forming a first polysilicon layer on said first dielectric layer; patterning and etching said first polysilicon layer in a predetermined manner; doping said first polysilicon layer with a plurality of conductivity types; forming a second dielectric layer on said first polysilicon layer; forming a second polysilicon layer on said second dielectric layer; patterning and etching said second polysilicon layer in a predetermined manner; doping said second polysilicon layer with a plurality of conductivity types; forming a third dielectric layer on said second polysilicon layer; patterning and forming a plurality of openings through said first, second an third dielectric layers and said first and second polysilicon layers, said openings extending from said first substrate; forming epitaxial regions in said openings; forming a collector in each epitaxial region during or following the formation thereof; depositing a fourth dielectric layer on said epitaxial regions and said third dielectric layer; bonding a second substrate on said fourth dielectric layer; inverting said complimentary semiconductor devices; removing said first substrate; forming a base in each epitaxial region; forming a sidewall spacer dielectric layer on said epitaxial regions and said first dielectric layer; etching said sidewall spacer dielectric layer over said epitaxial regions to form sidewall spacers; forming an emitter in each epitaxial region; forming a plurality of contact openings, members of said plurality of contact openings extending to said first polysilicon layer, said second polysilicon layer and said epitaxial regions; forming contact polysilicon in said plurality of contact openings; doping said contact polysilicon to correspond to the regions of said first polysilicon layer, said second polysilicon layer or said epitaxial regions coupled thereto; and forming a plurality of electrical contacts over said plurality of contact openings on said contact polysilicon.

Claim 22

The process of claim 18 wherein the step of forming a fourth dielectric layer includes forming a nitride layer.

Claim 23

The process of claim 19 wherein the step of forming a fourth dielectric layer includes forming an oxide layer and then forming a nitride layer on said oxide layer.

Claim 24

The process of claim 18 wherein the epitaxial regions are etched back a predetermined distance below a first surface of the first dielectric layer following the removal of the first substrate.

Claim 25

The process of claim 18 wherein the step of forming an emitter in each epitaxial region is performed following the step of doping said contact polysilicon.

Claim 26

The process of claim 18 wherein the steps of forming a collector, forming a base, forming an emitter, doping said first and second polysilicon layers and doping said contact polysilicon are performed by ion implantation.

Claim 27

The process of claim 18 wherein the dielectric layers are nitride, oxide or a combination of oxide and nitride.