Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
147 words
A test assist circuit for a semiconductor device, said test circuit being contained in a semiconductor device having a memory circuit for storing multiple-bit data, a logic circuit and selection means for disconnecting said test assist circuit from said logic circuit and connecting said test assist circuit to external terminals, for independently testing said memory circuit, said test assist circuit comprising: addressing means for addressing said memory circuit on the basis of a multiple-bit address signal; input data storage means for storing multiple-bit input data and supplying the same to said memory circuit; and output data storage means for storing multiple-bit data outputted from said memory circuit including means for storing at least one of at least single-bit information within said multiple-bit address signal and at least single-bit information within said multiple-bit input data to output the same with said multiple-bit data outputted form said memory circuit.
Claim 2
Dependent Claim
147 words
A test assist circuit for a semiconductor device, said test circuit being contained in a semiconductor device having a memory circuit for storing multiple-bit data, a logic circuit and selection means for disconnecting said test assist circuit from said logic circuit and connecting said test assist circuit to external terminals, for independently testing said memory circuit, said test assist circuit comprising: addressing means for addressing said memory circuit on the basis of a multiple-bit address signal; input data storage means for storing multiple-bit input data and supplying the same to said memory circuit; and output data storage means for storing multiple-bit data outputted from said memory circuit including means for storing at least one of at least single-bit information within said multiple-bit address signal and at least single-bit information within said multiple-bit input data to output the same with said multiple-bit data outputted form said memory circuit.
Claim 3
Dependent Claim
140 words
A test assist circuit for a semiconductor device in accordance with claim 1, wherein said logic circuit includes means for outputting a multiple-bit internal address signal and multiple-bit internal data, said test assist circuit further including: an address signal input terminal for receiving a multiple-bit external address signal; a data input terminal for receiving multiple-bit external data; and wherein said selection means includes address selecting means for selecting at least one of said external address signal received at said address signal input terminal and said internal address signal outputted from said logic circuit to supply the same to said addressing means; and input data selecting means for selecting at least one of said external data received at said data input terminal and said internal data outputted from said logic circuit to supply the same to said input data storage means.
Claim 4
Dependent Claim
89 words
A test assist circuit for a semiconductor device in accordance with claim 2, wherein said logic circuit includes means for receiving data outputted from said output data storage means, said test assist circuit further including: a data output terminal for outputting said data outputted from said output data storage means to the exterior; and wherein said selection means further includes output signal selecting means for selectively outputting said data outputted from said output data storage means to at least one of said logic circuit and said data output terminal
Claim 5
Dependent Claim
56 words
A test assist circuit for a semiconductor device in accordance with claim 3, wherein said output data storage means includes a register for storing said multiple-bit data, at least single-bit information within said address signal and at least single-bit information within said input data in a bit-parallel manner and outputting the same in a bit-serial manner.
Claim 6
Dependent Claim
80 words
A test assist circuit for a semiconductor device in accordance with claim 2, wherein said data output means of said logic circuit includes means for outputting bit-serial data, said data input terminal includes a terminal for receiving external bit-serial data, and said input data storage means includes a register for storing said data selected by said input data selecting means in a bit-serial manner and outputting the same in a bit-parallel manner to supply the same to said memory circuit.
Claim 7
Dependent Claim
49 words
A test assist circuit for a semiconductor device in accordance with claim 2, including a plurality of said memory circuits, said addressing means, said input data storage means, said address selecting means and said output data selecting means being provided in plural respecitvely in correspondence to said memory circuits.
Claim 8
Dependent Claim
186 words
In a test assist circuit for a semi-conductor device, said test assist circuit being contained in said semi-conductor device, said semi-conductor device having a memory circuit for storing multi-bit data and a logic circuit for independently testing said memory circuit, disconnecting means for disconnecting said memory circuit form said logic circuit, addressing means for addressing said memory circuit on the basis of a multiple-bit address signal, input data storage means for storing multiple-bit input data and supplying the same to said memory circuit, and output data storage means for storing multiple-bit data outputting from said memory circuit, the improvement wherein, said output data storage means further includes, means for storing at least one of at least single-bit information within said multiple-bit address signal and at least single-bit information contained within said multiple-bit input data, and means for controlling said output data storage means such that, said at least one of (a) said at least single-bit information contained within said multiple-bit address signal and (b) said at least single-bit information contained within said multiple-bit input data is outputted with said multiple-bit data outputted from said memory circuit.
Claim 9
Dependent Claim
186 words
In a test assist circuit for a semi-conductor device, said test assist circuit being contained in said semi-conductor device, said semi-conductor device having a memory circuit for storing multi-bit data and a logic circuit for independently testing said memory circuit, disconnecting means for disconnecting said memory circuit form said logic circuit, addressing means for addressing said memory circuit on the basis of a multiple-bit address signal, input data storage means for storing multiple-bit input data and supplying the same to said memory circuit, and output data storage means for storing multiple-bit data outputting from said memory circuit, the improvement wherein, said output data storage means further includes, means for storing at least one of at least single-bit information within said multiple-bit address signal and at least single-bit information contained within said multiple-bit input data, and means for controlling said output data storage means such that, said at least one of (a) said at least single-bit information contained within said multiple-bit address signal and (b) said at least single-bit information contained within said multiple-bit input data is outputted with said multiple-bit data outputted from said memory circuit.
Claim 10
Dependent Claim
135 words
In a test assist circuit as recited in claim 7, wherein said logic circuit includes means for outputting a multiple-bit internal address signal and multiple-bit internal data, the improvement further comprising: an address signal input terminal for receiving a multiple-bit external address signal; a data input terminal for receiving multiple-bit external data; and wherein said disconnecting means includes address selecting means for selecting at least one of said external address signal received at said address signal input terminal and said internal address signal outputted from said logic circuit to supply the same to said addressing means; and input data selecting means for selecting at least one of said external data received at said data input terminal and said internal data outputted from said logical circuit to supply the same to said input data storage means.
Claim 11
Dependent Claim
85 words
In a test assist circuit as recited in claim 7, wherein said logic circuit further includes means for receiving data outputted from said output data storage means, the improvement further comprising: a data output terminal for outputting said data outputted from said output data storage means to the exterior; and wherein said disconnecting means further includes output signal selecting means for selectively outputting said data outputted from said output data storage means to at least one of said logic circuit and said data output terminal.
Claim 12
Dependent Claim
56 words
In a test assist circuit as recited in claim 9, the improvement further comprising said output data storage means including a register for storing said multiple-bit data, at least single-bit information within said address signal and at least single-bit information within said input data in a bit-parallel manner and outputting the same in a bit-serial manner.
Claim 13
Dependent Claim
81 words
In a test assist circuit as recited in claim 8, the improvement further comprising said data output means of said logic circuit further including means for outputting bit-serial data, said data input terminal including a terminal for receiving external bit-serial data, and said input data storage means including a register for storing said data selected by said input data selecting means in a bit-serial manner and outputting the same in a bit-parallel manner to supply the same to said memory circuit.
Claim 14
Dependent Claim
61 words
In a test assist circuit as recited in claim 7, wherein a plurality of said memory circuits are provided, the improvement further comprising said addressing means, said input data storage means, said addressing selecting means, and said output data selecting means being provided in a like plurality to said memory circuit and in correspondence with respective ones of said memory circuits.