Nonvolatile floating gate semiconductor memory device

Claim 2

A nonvolatile semiconductor memory device comprising: a write line layer; a read line layer; a write gate line layer; a control gate line layer; a read gate line layer; a cell transistor, formed of a floating gate type MOS transistor having a source-drain path, for storing an electric charge, said cell transistor having a gate connected to said control gate line layer; a first selecting transistor, formed of an MOS transistor, having a gate connected to said read gate line layer, having a terminal of a source-drain path connected to said read line layer, and having the other terminal of the source-drain path connected to a first terminal of the source-drain path of said cell transistor; and a second selecting transistor formed of an MOS transistor comprising an impurity diffusion layer through which electrons are injected into a floating gate electrode of the floating gate type MOS transistor forming said cell transistor in a data erase mode and through while electrons are dissipated from said floating gate electrode of said cell transistor in a data write mode, said second selecting transistor having a gate connected to said write gate line layer, having one terminal of a source-drain path connected to said write line layer, and having another terminal of the source-drain path connected to the second terminal of said source-drain path of said cell transistor.

Claim 3

The memory device according to claim 1, in which said write gate line layer and said read gate line layer are interconnected with each other to form a selecting gate line.

Claim 4

The memory device according to claim 1, in which said read gate line layer and said control gate line layer are interconnected with each other to form a common gate line.

Claim 5

The memory device according to claim 1, in which said write line layer applies to said one terminal of said source-drain path of said second selecting transistor a first voltage in the data write mode, and a second voltage lower than said first voltage in the data erase and data read modes, said write gate line layer applies to said gate of said second selecting transistor said first voltage in the data erase and data write modes, and a third voltage lower than said first voltage and higher than said second voltage in the data read mode, said control gate line layer applies to said control gate of said cell transistor said first voltage in the data erase mode, and said second voltage in the data write and data read modes, said read gate line layer applies to said gate of said first selecting transistor said second voltage in the data erase and data write modes, and said third voltage in the data read mode; and said read line layer applies said third voltage to said one terminal of said source-drain path of said first selecting transistor in the data read mode.

Claim 6

The memory device according to claim 2, in which said write line layer applies to said one terminal of said source-drain path of said second selecting transistor a first voltage in the data write mode, and a second voltage lower than said first voltage in the data erase and data read modes, said selecting gate line layer applies to said gates of said first and second selecting transistors said first voltage in the data erase and data write modes, and a third voltage lower than said first voltage and higher than said second voltage in the data read mode, said control gate line layer applies to said control gate of said cell transistor said first voltage in the data erase mode, and said second voltage in the data write and data read modes, and said read line layer applies said third voltage to said one terminal of said source-drain path of aid first selecting transistor in the data write and data read modes.

Claim 7

The memory device according to claim 3, in which said write line layer applies to said one terminal of said source-drain path of said second selecting transistor a first voltage in the data write mode, and a second voltage lower than said first voltage in the data erase and data read modes, said common gate line layer applies to said gates of said first selecting transistor and said cell transistor said first voltage in the data erase mode, said second voltage in the data write mode, and a third voltage lower than said first voltage and higher than said second voltage in the data read mode, said write gate line layer applies to said gate of said second selecting transistor said first voltage in the data erase and data write modes, and said third voltage in the data read mode, and said read line layer applies to said one terminal of said source-drain path of said first selecting transistor said second voltage in the data erase mode, and said third voltage in the data read mode.

Claim 8

The memory device according to claim 1, in which said read line layer is connected to a power source via a load circuit, and a signal on the read line layer is supplied to a sense amplifier circuit.

Claim 9

The memory device according to claim 7, in which said load circuit comprises a MOS transistor which is normally turned on.

Claim 10

The memory device according to claim 7, in which said load circuit comprises a MOS transistor which is turned on by a clock signal.

Claim 11

The memory device according to claim 9, in which the voltage of said read gate line layer is supplied to said gate of said first selecting transistor in synchronism with said clock signal.

Claim 12

The memory device according to claim 7, in which said sense amplifier circuit is an inverter circuit.

Claim 13

The memory device according to claim 2, in which said read line layer is connected to a power source via a load circuit, and a signal on the read line layer is supplied to a sense amplifier circuit.

Claim 14

The memory device according to claim 12, in which said load circuit comprises a MOS transistor which is normally turned on.

Claim 15

The memory device according to claim 12, in which said load circuit comprises a MOS transistor which is turned on by a clock signal.

Claim 16

The memory device according to claim 14, in which the voltage of said selecting gate line layer is supplied to said gates of said first and second selecting transistors in synchronism with said clock signal.

Claim 17

The memory device according to claim 12, in which said sense amplifier circuit is an inverter circuit.

Claim 18

The memory device according to claim 3, in which said read line layer is connected to a power source via a load circuit, and a signal on the read line layer is supplied to a sense amplifier circuit.

Claim 19

The memory device according to claim 17, in which said load circuit comprises a MOS transistor which is normally turned on.

Claim 20

The memory device according to claim 17, in which said load circuit comprises a MOS transistor which is turned on by a clock signal.

Claim 21

The memory device according to claim 19, in which the voltage of said common gate line layer is supplied to said gates of said first selecting and cell transistors in synchronism with said clock signal.

Claim 22

The memory device according to claim 17, in which said sense amplifier circuit is an inverter circuit.

Claim 23

A nonvolatile semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; first to fourth diffusion layers of a second conductivity type formed in said substrate; a first channel region formed between said first and second diffusion layers; a second channel region formed between said second and third diffusion layers; a third channel region formed between said third and fourth diffusion layers; a first gate electrode formed above said first channel region; a floating gate electrode formed above said second channel region, and extending above said third diffusion layer; a control gate electrode formed above said floating gate electrode; a second gate electrode formed above said third channel region; a first insulating layer formed between said second channel region and said floating gate electrode; a second insulating layer formed between said third diffusion layer and said extending portion of said floating gate electrode, the second insulating layer having a thickness thinner than that of said first insulating layer; a write line layer for supplying a predetermined voltage to said fourth diffusion layer in data erase, write, and read modes; a write gate line layer for supplying a predetermined voltage to said second gate electrode in the data erase, write, and read modes; a control gate line layer for supplying a predetermined voltage to said control gate electrode in the data erase, write, and read modes; a read gate line layer for supplying a predetermined voltage to said first gate electrode in data erase, write, and read modes; and a read line layer for supplying a predetermined voltage to said first diffusion layer in the data erase, write, and read modes.

Claim 24

A nonvolatile semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; first to fourth diffusion layers of a second conductivity type formed in said substrate; a first channel region formed between said first and second diffusion layers; a second channel region formed between said second and third diffusion layers; a third channel region formed between said third and fourth diffusion layers; a first gate electrode formed above said first channel region; a floating gate electrode formed above said second channel region, and extending above said third diffusion layer; a control gate electrode formed above said floating gate electrode; a second gate electrode formed above said third channel region; a first insulating layer formed between said second channel region and said floating gate electrode; a second insulating layer formed between said third diffusion layer and said extending portion of said floating gate electrode, the second insulating layer having a thickness thinner than that of said first insulating layer; a write line layer for supplying a predetermined voltage to said fourth diffusion layer in data erase, write, and read modes; a write gate line layer for supplying a predetermined voltage to said second gate electrode in the data erase, write, and read modes; a control gate line layer for supplying a predetermined voltage to said control gate electrode in the data erase, write, and read modes; a read gate line layer for supplying a predetermined voltage to said first gate electrode in data erase, write, and read modes; and a read line layer for supplying a predetermined voltage to said first diffusion layer in the data erase, write, and read modes.

Claim 25

The memory device according to claim 22, in which said write line layer applies to said fourth diffusion layer a first voltage in the data write mode, and a second voltage lower than said first voltage in the data erase and data read modes, said write gate line layer applies to said second gate electrode said first voltage in the data erase and data write modes, and a third voltage lower than said first voltage and higher than said second voltage in the data read mode, said control gate line layer applies to said control gate electrode said first voltage in the data erase mode, and said second voltage in the data write and data read modes, said read gate line layer applies to said first gate electrode said second voltage in the data erase and data write modes, and said third voltage in the data read mode; and said read line layer applies said third voltage to said first diffusion layer in the data read mode.

Claim 26

The memory device according to claim 22, in which said read line layer is connected to a power source via a load circuit, and a signal on the read line layer is supplied to a sense amplifier circuit.

Claim 27

The memory device according to claim 24, in which said load circuit comprises a MOS transistor which is normally turned on.

Claim 28

The memory device according to claim 24, in which said load circuit comprises a MOS transistor which is turned on by a clock signal.

Claim 29

The memory device according to claim 26, in which the voltage of said read gate line layer is supplied to said first gate electrode in synchronism with said clock signal.

Claim 30

The memory device according to claim 24, in which said sense amplifier circuit is an inverter circuit.

Claim 31

The memory device according to claim 22, in which said write gate line layer and said read gate line layer are interconnected with each other.

Claim 32

The memory device according to claim 22, in which said control gate line layer and said read gate line layer are interconnected with each other.

Claim 33

A nonvolatile semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; first to third diffusion layers of a second conductivity type formed in said substrate; a third channel region formed between said second and third diffusion layers; a floating gate electrode formed above said first channel region; a floating gate electrode formed above said second channel region, and extending above and with a portion projected toward said second diffusion layer; a control gate electrode formed above said floating gate electrode; a second gate electrode formed above said third channel region; a first insulating layer formed between said second channel region and said floating gate electrode; a second insulating layer formed between said second diffusion layer and said projected portion of said floating gate electrode, the second insulating layer having a smaller thickness than said first insulating layer; a write line layer for supplying a predetermined voltage to said third diffusion layer in the data erase, write and read modes of the memory device; a write gate line layer for supporting a predetermined voltage to said second gate electrode in the data erase, write and read modes; a control gate line layer for supplying a predetermined voltage to said control gate electrode in the data erase, write and read modes; a read gate line layer for supplying a predetermined voltage to said first gate electrode in the data erase, write and read modes; and a read line layer for supplying a predetermined voltage to said first diffusion layer in the data erase, write and read modes.

Claim 34

A nonvolatile semiconductor memory device comprising: a semiconductor substrate of a first conductivity type; first to third diffusion layers of a second conductivity type formed in said substrate; a third channel region formed between said second and third diffusion layers; a floating gate electrode formed above said first channel region; a floating gate electrode formed above said second channel region, and extending above and with a portion projected toward said second diffusion layer; a control gate electrode formed above said floating gate electrode; a second gate electrode formed above said third channel region; a first insulating layer formed between said second channel region and said floating gate electrode; a second insulating layer formed between said second diffusion layer and said projected portion of said floating gate electrode, the second insulating layer having a smaller thickness than said first insulating layer; a write line layer for supplying a predetermined voltage to said third diffusion layer in the data erase, write and read modes of the memory device; a write gate line layer for supporting a predetermined voltage to said second gate electrode in the data erase, write and read modes; a control gate line layer for supplying a predetermined voltage to said control gate electrode in the data erase, write and read modes; a read gate line layer for supplying a predetermined voltage to said first gate electrode in the data erase, write and read modes; and a read line layer for supplying a predetermined voltage to said first diffusion layer in the data erase, write and read modes.

Claim 35

The memory device according to claim 31, in which said write line layer applies to said third diffusion layer a first voltage in the data write mode, and a second voltage lower than said first voltage in the data erase and data read modes, said write gate line layer applies to said second gate electrode said first voltage in the data erase and data write modes, and a third voltage lower than said first voltage and higher than said second voltage in the data read mode, said control gate line layer applies to said control gate electrode said first voltage in the data erase mode, and said second voltage in the data write and data read modes, said read gate line layer applies to said first gate electrode said second voltage in the data erase and data write modes, and said third voltage in the data read mode; and said read line layer applies said third voltage to said first diffusion layer in the data read mode.

Claim 36

The memory device according to claim 31, in which said read line layer is connected to a power source via a load circuit, and a signal on the read line layer is supplied to a sense amplifier circuit.

Claim 37

The memory device according to claim 33, in which said load circuit comprises a MOS transistor which is normally turned on.

Claim 38

The memory device according to claim 33, in which said load circuit comprises a MOS transistor which is turned on by a clock signal.

Claim 39

The memory device according to claim 35, in which the voltage of said read gate line layer is supplied to said first gate electrode in synchronism with said clock signal.

Claim 40

The memory device according to claim 33, in which said sense amplifier circuit is an inverter circuit.

Claim 41

The memory device according to claim 31, in which said write gate line layer and said read gate line layer are interconnected with each other.

Claim 42

The memory device according to claim 31, in which said control gate line layer and said read gate line layer are interconnected with each other.

Claim 43

The memory device according to claim 31, in which said first gate electrode and said control gate electrode are interconnected with each other.