Non-volatile semiconductor memory device having an improved write circuit

Claim 2

A non-volatile semiconductor memory device comprising: a plurality of row lines; a plurality of column lines; a plurality of non-volatile memory cells each coupled to one of said row lines and one of said column lines; a row selection circuit responsive to row address information for selecting one of said row lines; a write voltage terminal to which a write voltage is applied; and a plurality of write voltage application circuits each coupled between each one of said row lines and said write voltage terminal for applying said write voltage thereto in a write state, each of said write voltage application circuits including a current limiting MIS transistor of an enhancement type through which a limited amount of current flows and means for connecting a source-drain path of said current limiting transistor between said row line and said write voltage terminal.

Claim 3

The memory device according to claim 1, in which said current limiting transistor is a first P-channel MIS transistor and a gate of said first P-channel transistor is supplied with a potential which is lower than said write voltage.

Claim 4

The memory device according to claim 1, in which said connecting means includes a switching MIS transistor having a source-drain path connected in series with the source-drain path of said current limiting transistor, said switching transistor being rendered conductive in said write state and non-conductive in a read state.

Claim 5

The memory device according to claim 1, in which said row selection circuit includes a plurality of driver circuits each provided for each one of said row lines and a plurality of connecting MIS transistors each coupled between the output of one of said driver circuits and one of said row lines.

Claim 6

The memory device according to claim 1, in which each of said memory cells includes a floating gate type MIS transistor.

Claim 7

A non-volatile semiconductor memory device comprising: a plurality of word lines; a plurality of digit lines; a plurality of non-volatile memory cells each coupled to one of said word lines and one of said digit lines; a plurality of word driver circuits each provided for each of said word lines; and selection means responsive to row address information for selectively enabling one of said word driver circuits, the enabled word driver circuit raising the potential of the associated word line to a first potential in a read state and to a second potential higher than said first potential in a write state, the remaining word driver circuits other than said enabled word driver circuit setting the word lines associated therewith at a reference potential, each of said word driver circuits including: a first switch coupled between a first terminal receiving said first potential and a driving node; a second switch coupled between said driving node and a second terminal receiving said reference potential; means responsive to said selection means for enabling one of said first and second switches; first means for connecting said driving node to the associated word line; and a write voltage application circuit coupled between a third terminal receiving said second potential and the associated word line for supplying said second potential to said associated word line in said write state, said write voltage application circuit including a current limiting MIS transistor of an enhancement type, second means for connecting said current limiting transistor between said third terminal and said associated work line, and bias means for biasing the gates of each said current limiting transistor such that a limited amount of current flows therethrough at least in said write state.

Claim 8

A non-volatile semiconductor memory device comprising: a plurality of word lines; a plurality of digit lines; a plurality of non-volatile memory cells each coupled to one of said word lines and one of said digit lines; a plurality of word driver circuits each provided for each of said word lines; and selection means responsive to row address information for selectively enabling one of said word driver circuits, the enabled word driver circuit raising the potential of the associated word line to a first potential in a read state and to a second potential higher than said first potential in a write state, the remaining word driver circuits other than said enabled word driver circuit setting the word lines associated therewith at a reference potential, each of said word driver circuits including: a first switch coupled between a first terminal receiving said first potential and a driving node; a second switch coupled between said driving node and a second terminal receiving said reference potential; means responsive to said selection means for enabling one of said first and second switches; first means for connecting said driving node to the associated word line; and a write voltage application circuit coupled between a third terminal receiving said second potential and the associated word line for supplying said second potential to said associated word line in said write state, said write voltage application circuit including a current limiting MIS transistor of an enhancement type, second means for connecting said current limiting transistor between said third terminal and said associated work line, and bias means for biasing the gates of each said current limiting transistor such that a limited amount of current flows therethrough at least in said write state.

Claim 9

The memory device according to claim 6, in which said bias means makes said current limiting transistors non-conductive in said read state.

Claim 10

The memory device according to claim 6, in which said current limiting transistors are P-channel MIS transistors and the gate potential of said current limiting transistors is selected to a potential which is lower than said second potential by 2 to 3 volts.

Claim 11

The memory device according to claim 6, in which said first means includes a MIS transistor having a source-drain path coupled between the driving node and the associated word line.

Claim 12

The memory device according to claim 6, in which said second means includes a MIS transistor having a source-drain path coupled between said current limiting transistor and the associated word line.

Claim 13

A non-volatile semiconductor memory device comprising: a first voltage terminal receiving a first voltage; a second voltage terminal receiving a second voltage higher than said first voltage; a reference voltage terminal receiving a reference voltage; a row line; a column line; a non-volatile memory cell transistor coupled to said row line and said column line; a row selection circuit coupled to said row line, said first voltage terminal and said reference voltage terminal for selectively applying one of said first voltage and said reference voltage to said row line in response to row address information; a write voltage application circuit coupled between said write voltage terminal and said row line, said write voltage application circuit including: a series connection of first and second P channel type field effect transistors connected in series between said write voltage terminal and said row line; a bias circuit for applying a gate of said first P channel type transistor with an intermediate voltage which is lower than said second voltage but higher than said first voltage at least in a write state; and control means for rendering said second P channel type field effect transistor conductive in said write state and non-conductive in a read state; said non-volatile semiconductor memory deivice further comprising a column selection circuit coupled to said column line, said first voltage terminal and said second voltage terminal for selectively applying said first voltage to said column line in said read state and said second voltage to said column line in said write state.

Claim 14

A non-volatile semiconductor memory device comprising: a first voltage terminal receiving a first voltage; a second voltage terminal receiving a second voltage higher than said first voltage; a reference voltage terminal receiving a reference voltage; a row line; a column line; a non-volatile memory cell transistor coupled to said row line and said column line; a row selection circuit coupled to said row line, said first voltage terminal and said reference voltage terminal for selectively applying one of said first voltage and said reference voltage to said row line in response to row address information; a write voltage application circuit coupled between said write voltage terminal and said row line, said write voltage application circuit including: a series connection of first and second P channel type field effect transistors connected in series between said write voltage terminal and said row line; a bias circuit for applying a gate of said first P channel type transistor with an intermediate voltage which is lower than said second voltage but higher than said first voltage at least in a write state; and control means for rendering said second P channel type field effect transistor conductive in said write state and non-conductive in a read state; said non-volatile semiconductor memory deivice further comprising a column selection circuit coupled to said column line, said first voltage terminal and said second voltage terminal for selectively applying said first voltage to said column line in said read state and said second voltage to said column line in said write state.

Claim 15

The memory device according to claim 11, in which said row selection circuit includes: a third P type channel field effect transistor coupled between said first voltage terminal and an output node; a first N channel type field effect transistor coupled between said output node and said reference voltage terminal; means for applying a column address signal to gates of said third P channel type transistor and first N channel type transistor; and a second N channel type field effect transistor coupled between said output node and said column line and having a gate supplied with said first voltage.

Claim 16

The memory device according to claim 11, in which said intermediate voltage is lower than said second voltage by 2 to 3 volts.

Claim 17

A non-volatile semiconductor memory device comprising: a first voltage receiving a first voltage; a second voltage terminal receiving a second voltage higher than said first voltage; a reference voltage terminal receiving a reference voltage; a row line; a column line; a non-volatile memory cell transistor coupled to said row line and said column line; a row selection circuit coupled to said row line, said first voltage terminal and said reference voltage terminal for selectively applying one of said first voltage and said reference voltage to said row line in response to row address information, said row selection circuit including: a first P channel type field effect transistor coupled between said first voltage terminal and an output node; a first N channel type field effect transistor coupled between said output node and said reference voltage terminal; means for applying a column address signal to gates of said first P channel type transistor and first N channel type transistor; and a second N channel type field effect transistor coupled between said output node and said column line and having a gate supplied with said first voltage; said non-volatile semiconductor memory device further including a write voltage application circuit coupled between said write voltage terminal and said row line, said write voltage application circuit including: a series connection of second and third P channel type field effect transistors connected in series between said write voltage terminal and said row line; a bias circuit for applying a gate of said second P channel type transistor with an intermediate voltage which is lower than said second voltage but higher than said first voltage at least in a write state; and control means for rendering said third P channel type field effect transistor conductive in said write state and non-conductive in a read state; said non-volatile semiconductor memory device further including a column selection circuit coupled to said column line, said first voltage terminal and said second voltage terminal for selectively applying said first voltage to said column line in said read state and said second voltage to said column line in said write state.

Claim 18

A non-volatile semiconductor memory device comprising: a first voltage receiving a first voltage; a second voltage terminal receiving a second voltage higher than said first voltage; a reference voltage terminal receiving a reference voltage; a row line; a column line; a non-volatile memory cell transistor coupled to said row line and said column line; a row selection circuit coupled to said row line, said first voltage terminal and said reference voltage terminal for selectively applying one of said first voltage and said reference voltage to said row line in response to row address information, said row selection circuit including: a first P channel type field effect transistor coupled between said first voltage terminal and an output node; a first N channel type field effect transistor coupled between said output node and said reference voltage terminal; means for applying a column address signal to gates of said first P channel type transistor and first N channel type transistor; and a second N channel type field effect transistor coupled between said output node and said column line and having a gate supplied with said first voltage; said non-volatile semiconductor memory device further including a write voltage application circuit coupled between said write voltage terminal and said row line, said write voltage application circuit including: a series connection of second and third P channel type field effect transistors connected in series between said write voltage terminal and said row line; a bias circuit for applying a gate of said second P channel type transistor with an intermediate voltage which is lower than said second voltage but higher than said first voltage at least in a write state; and control means for rendering said third P channel type field effect transistor conductive in said write state and non-conductive in a read state; said non-volatile semiconductor memory device further including a column selection circuit coupled to said column line, said first voltage terminal and said second voltage terminal for selectively applying said first voltage to said column line in said read state and said second voltage to said column line in said write state.

Claim 19

The memory device according to claim 14, in which said intermediate voltage is lower than said second voltage terminal by 2 to 3 volts.