Abstract This invention provides a method for synthesis of diamond by contacting a substrate with a mixed gas of carbon source gas and hydrogen gas activated by irradiation with microwave to produce plasma, thereby to deposit diamond on the surface of the substrate wherein microwave is introduced from a plurality of directions to the substrate and an apparatus for synthesis of diamond which comprises at least one microwave oscillator which oscillates microwave, a plurality of waveguides for introducing from a plurality of directions the microwave oscillated from said microwave oscillator to a substrate for deposition of diamond, and a reaction chamber which is connected to said waveguides and in which diamond is deposited by generation of plasma thereby to form a diamond thin film on the surface of said substrate.
In a method for the synthesis of diamond by contacting a substrate with a mixed gas of carbon source gas and hydrogen gas activated by irradiation with microwave to produce plasma and depositing diamond on the surface of the substrate, the improvement which comprises introducing microwave from a plurality of directions to the substrate.
Claim 2
Dependent Claim
54 words
In a method for the synthesis of diamond by contacting a substrate with a mixed gas of carbon source gas and hydrogen gas activated by irradiation with microwave to produce plasma and depositing diamond on the surface of the substrate, the improvement which comprises introducing microwave from a plurality of directions to the substrate.
Claim 3
Dependent Claim
32 words
A method according to claim 1 wherein the carbon source gas is generated from at least one compound selected from the group consisting of carbon monoxide, carbon dioxide, acetone and methyl alcohol.
Claim 4
Dependent Claim
38 words
A method according to claim 1 wherein the substrate is at least one member selected from the group consisting of a metal, a metal oxide, a metal nitride, a metal carbide, an alloy, a glass and a ceramic.
Claim 5
Dependent Claim
11 words
A method according to claim 1 wherein the substrate is silicon.
Claim 6
Dependent Claim
29 words
A method according to claim 1 wherein temperature of the surface of the substrate is 400°-1,200° C., reaction pressure is 0.001-1,000 Torr and microwave is of ISM frequency band.
Claim 7
Dependent Claim
13 words
A method according to claim 4 wherein the microwave is of 2.45 GHz.