US4868617A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gate controllable lightly doped drain mosfet devices
Assignee: Promos Technologies Inc
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Filing: 1988-04-25
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Granted: 1989-09-19
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Expires: 2008-04-25
Abstract
Abstract An LDD MOSFET structure in which gate sidewall spacers are formed of polycrystalline silicon and electrically shorted to the gate to extend gate control over the LDD region surface oxide and thereby reduce and control interface charge trapping without increasing substrate currents.
Inventors
- 👤 Stephen S. Chiao
- 👤 Wung K. Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 03:23
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/60; H10D30/601; H10D30/605; H10D64/00; H10D64/01; H10D64/021; Y; Y10; Y10S; Y10S257/00; Y10S257/90
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
207 words
A gate controllable lightly doped drain MOSFET structure comprising: a semiconductor substrate of a first conductivity type and including an initial planar upper surface; a gate dielectric layer disposed on said surface; a gate electrode, including laterally opposite sidewalls, covering said gate dielectric layer; a pair of LDD surface dielectric layers disposed on respective areas of said surface adjacent respective sidewalls and having a selected thickness different than the thickness of said gate oxide layer; a lightly doped source region and a lightly doped drain region of a second conductivity type having a first concentration of second conductivity type dopant and being formed in respective regions of said substrate beneath corresponding LDD surface dielectric layers and having junctions delimiting a channel in said substrate under said gate electrode; a pair of conductive spacers disposed on respective LDD surface dielectric layers over said lightly doped regions and ohmically connected to said gate electrode; and a regularly doped source region and a regularly doped drain region of said second conductivity type having a second concentration substantially greater than said first concentration and being formed in said substrate beneath respective areas of said surface adjacent respective LDD surface dielectric layers and contiguous with respective lightly doped source and drain regions
Claim 2
Dependent Claim
207 words
A gate controllable lightly doped drain MOSFET structure comprising: a semiconductor substrate of a first conductivity type and including an initial planar upper surface; a gate dielectric layer disposed on said surface; a gate electrode, including laterally opposite sidewalls, covering said gate dielectric layer; a pair of LDD surface dielectric layers disposed on respective areas of said surface adjacent respective sidewalls and having a selected thickness different than the thickness of said gate oxide layer; a lightly doped source region and a lightly doped drain region of a second conductivity type having a first concentration of second conductivity type dopant and being formed in respective regions of said substrate beneath corresponding LDD surface dielectric layers and having junctions delimiting a channel in said substrate under said gate electrode; a pair of conductive spacers disposed on respective LDD surface dielectric layers over said lightly doped regions and ohmically connected to said gate electrode; and a regularly doped source region and a regularly doped drain region of said second conductivity type having a second concentration substantially greater than said first concentration and being formed in said substrate beneath respective areas of said surface adjacent respective LDD surface dielectric layers and contiguous with respective lightly doped source and drain regions
Claim 3
Dependent Claim
21 words
A structure as in claim 1 wherein said gate electrode comprises polycrystalline silicon and said dielectric layers comprise oxides of silicon.
Claim 4
Dependent Claim
22 words
A structure as in claim 2 wherein said first conductivity type is P-type conductivity and said second conductivity type is N-type conductivity.
Claim 5
Dependent Claim
26 words
A structure as in claim 1 wherein a common dielectric layer forms said gate dielectric layer and forms at least part of said surface dielectric layers.
Claim 6
Dependent Claim
18 words
A structure as in claim 4 wherein said surface dielectric layers are thinner than said gate dielectric layer.
Claim 7
Dependent Claim
72 words
A structure as in claim 5 wherein a supplementary dielectric material forms portions of said surface dielectric layers and forms, over each of said portions, a respective etch stop layer between the corresponding spacer and the adjacent sidewall of the gate, and further comprising silicide disposed over said etch stop layer between said spacers and said gate electrode to provide ohmic connections electrically shorting said gate electrode to each of said spacers.
Claim 8
Dependent Claim
25 words
A structure as in claim 6 and further comprising silicide disposed on contact areas of said surface over said regularly doped source and drain regions.
Claim 9
Dependent Claim
30 words
A structure as in claim 5 and further comprising a pair of small dielectric spacers disposed on respective LDD surface dielectric layers adjacent the outer sides of corresponding conductive spacers.
Claim 10
Dependent Claim
204 words
A gate controllable lightly doped drain MOSFET structure comprising: a semiconductor substrate of a first conductivity type and including an initial planar upper surface; a gate dielectric layer formed of an oxide of silicon disposed on said surface; a gate electrode formed of polysilicon with laterally opposite sidewalls and covering said gate dielectric layer; a pair of LDD surface dielectric layers disposed on respective areas of said surface adjacent respective sidewalls; a lightly doped source region and a lightly doped drain region of a second conductivity type having a first concentration of second conductivity type dopant and being formed in respective regions of said substrate beneath corresponding LDD surface dielectric layers and having junctions delimiting a channel in said substrate under said gate electrode. a pair of conductive polysilicon spacers disposed on respective LDD surface dielectric layers over said lightly doped regions and ohmically connected to said gate electrode; and a regularly doped source region and a regularly doped drain region of said second conductivity type having a second concentration substantially greater than said first concentration and being formed in said substrate beneath respective areas of said surface adjacent respective LDD surface dielectric layers and contiguous with respective lightly doped source and drain regions.
Claim 11
Dependent Claim
204 words
A gate controllable lightly doped drain MOSFET structure comprising: a semiconductor substrate of a first conductivity type and including an initial planar upper surface; a gate dielectric layer formed of an oxide of silicon disposed on said surface; a gate electrode formed of polysilicon with laterally opposite sidewalls and covering said gate dielectric layer; a pair of LDD surface dielectric layers disposed on respective areas of said surface adjacent respective sidewalls; a lightly doped source region and a lightly doped drain region of a second conductivity type having a first concentration of second conductivity type dopant and being formed in respective regions of said substrate beneath corresponding LDD surface dielectric layers and having junctions delimiting a channel in said substrate under said gate electrode. a pair of conductive polysilicon spacers disposed on respective LDD surface dielectric layers over said lightly doped regions and ohmically connected to said gate electrode; and a regularly doped source region and a regularly doped drain region of said second conductivity type having a second concentration substantially greater than said first concentration and being formed in said substrate beneath respective areas of said surface adjacent respective LDD surface dielectric layers and contiguous with respective lightly doped source and drain regions.
References Cited (Backward Citations)
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