Abstract A method of making a variable-capacitance diode device including semiconductor layer a first conductivity type in which the impurity concentration decreases with increasing depth from surface of a PN junction. The semiconductor layer of the first conductivity type is formed by diffusing an impurity element of the first conductivity type in a semiconductor substrate with a high degree of concentration. Thereafter, a semiconductor layer of a second conductivity type is formed which has such an impurity concentration profile that the concentration of impurity element of the second conductivity type is lower than the impurity concentration of said semiconductor layer of the first conductivity type formed in said semiconductor substrate and at a predetermined depth, the concentration of the second conductivity type impurity element is substantially equal or close to the concentration of the first conductivity type impurity element. Subsequent to the formation of the first conductivity type semiconductor layer, an impurity element of the second conductivity type is diffused so as to define said PN junction with said first conductivity type semiconductor layer.
A method of making a variable-compacitance diode device comprising the steps of: (1) forming semiconductor layer of the first conductivity type by introducing an impurity element of the first conductivity type in a semiconductor substrate with a high degree of concentration; (2) forming a semiconductor layer of a second conductivity type having such an impurity concentration profile that the concentration of impurity element of the second conductivity type is lower than the impurity concentration of said semiconductor layer of the first conductivity type formed in said semiconductor substrate; and at a predetermined depth, the concentration of the second conductivity type impurity element is substantially equal or close to the concentration of the first conductivity type impurity element; and (3) subsequent to said steps (1) and (2) by which the first conductivity type semiconductor layer was formed, introducing impurity element of the second conductivity type so as to define said PN junction with said first conductivity type semiconductor layer.
Claim 2
Independent Claim
158 words
A method of making a variable-compacitance diode device comprising the steps of: (1) forming semiconductor layer of the first conductivity type by introducing an impurity element of the first conductivity type in a semiconductor substrate with a high degree of concentration; (2) forming a semiconductor layer of a second conductivity type having such an impurity concentration profile that the concentration of impurity element of the second conductivity type is lower than the impurity concentration of said semiconductor layer of the first conductivity type formed in said semiconductor substrate; and at a predetermined depth, the concentration of the second conductivity type impurity element is substantially equal or close to the concentration of the first conductivity type impurity element; and (3) subsequent to said steps (1) and (2) by which the first conductivity type semiconductor layer was formed, introducing impurity element of the second conductivity type so as to define said PN junction with said first conductivity type semiconductor layer.
Claim 3
Dependent Claim
46 words
A method according to claim 1, wherein said semiconductor substrate is an N - conductivity type semiconductor substrate; said first conductivity type semiconductor layer is an N + conductivity type semiconductor layer; and said second conductivity type layer is a P + conductivity type semiconductor layer.
Claim 4
Dependent Claim
95 words
A method according to claim 2, wherein said N + conductivity type semiconductor layer is provided with such an impurity concentration profile that a maximum peak of the impurity concentration occurs at a depth X 1 ; said P + conductivity type semiconductor layer is provided with such an impurity concentration profile that a maximum peak of the impurity concentration occurs at a depth X 2 ; and said N + conductivity type and P + conductivity type semiconductor layers are formed by effecting ion-implantation steps at said depths X 1 and X 2 respectively.
Claim 5
Dependent Claim
36 words
A method according to claim 3, wherein said depth X 1 is in the range of about 0.01 to 0.1 μm, and said depth X 2 is in the range of about 0.015 to 0.15 μm.
Claim 6
Dependent Claim
27 words
A method according to claim 4, wherein said first conductivity type impurity element comprises phosphorous or or arsenic, and said second conductivity type impurity element comprises boron.