Linear pn junction capacitance diode
Abstract
Abstract A capacitance diode has a substrate of a first conductivity type, an epitaxial layer of the first conductivity type present thereon, a first zone of the first conductivity type diffused therein and a second surface zone of the second opposite conductivity type over said first zone and forming a p-n junction with the first zone. According to the invention, the doping profile in the first zone varies substantially according to the equation N(x)=N o e - βx +N E , where N o is the doping concentration of the first zone at the p-n junction, N is the doping concentration of the epitaxial layer, and x is the distance from the p-n junction, and where N o <24 N E . As a result, a small frequency deviation is obtained, and this frequency deviation does not change sign.
Inventors
- 👤 Gerhard Raabe
Bibliographic Details
Claims Analysis
Total Claims: 5References Cited (Backward Citations)
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