Abstract A capacitance diode has a substrate of a first conductivity type, an epitaxial layer of the first conductivity type present thereon, a first zone of the first conductivity type diffused therein and a second surface zone of the second opposite conductivity type over said first zone and forming a p-n junction with the first zone. According to the invention, the doping profile in the first zone varies substantially according to the equation N(x)=N o e - βx +N E , where N o is the doping concentration of the first zone at the p-n junction, N is the doping concentration of the epitaxial layer, and x is the distance from the p-n junction, and where N o <24 N E . As a result, a small frequency deviation is obtained, and this frequency deviation does not change sign.
A capacitance diode having a semiconductor body with a substrate, an epitaxial layer of a first conductivity type provided on said substrate, a first zone, also of the first conductivity type, formed in said epitaxial layer by diffusion, and a surface-adjoining second zone of the second conductivity type over said first zone and forming a p-n junction with the first zone, characterized in that the doping profile in the first zone varies substantially according to the relationship N(x)=N o e - βx +N E , where N E is the starting doping concentration of the epitaxial layer in at.cm -3 , N o is the doping concentration of the p-n junction in at.cm. -3 obtained by diffusion of the first zone, x is the distance from the p-n junction in cm. and β is the slope of the diffusion profile in cm. -1 , and where N o <24N E .
Claim 2
Dependent Claim
151 words
A capacitance diode having a semiconductor body with a substrate, an epitaxial layer of a first conductivity type provided on said substrate, a first zone, also of the first conductivity type, formed in said epitaxial layer by diffusion, and a surface-adjoining second zone of the second conductivity type over said first zone and forming a p-n junction with the first zone, characterized in that the doping profile in the first zone varies substantially according to the relationship N(x)=N o e - βx +N E , where N E is the starting doping concentration of the epitaxial layer in at.cm -3 , N o is the doping concentration of the p-n junction in at.cm. -3 obtained by diffusion of the first zone, x is the distance from the p-n junction in cm. and β is the slope of the diffusion profile in cm. -1 , and where N o <24N E .
Claim 3
Dependent Claim
16 words
A capacitance diode as claimed in claim 1, characterized in that N o ≦12N E .
Claim 4
Dependent Claim
18 words
A capacitance diode as claimed in claim 1 or 2, characterized in that β≦4.10 -4 cm -1 .
Claim 5
Dependent Claim
45 words
A capacitance diode as claimed in claim 1 or 2, characterized in that the frequency deviation of said diode as a function of voltage always maintains the same sign and does not exceed a value of 0.5 percent within the operating range of the diode.