US3840306A
Expired / Lapsed
US
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Semiconductor capacitance diode having rounded off doping impurity profile
Assignee: Individual
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Filing: 1973-05-23
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Granted: 1974-10-08
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Expires: 1993-05-23
Abstract
Abstract Semiconductor device including semiconductor capacitance diode, comprising a low resistivity substrate and a higher resistivity first layer, both of first conductivity type; a diffused surface region at the surface of the first layer or of a second layer located at the first layer, the diffused region having a conductivity level exceeding that of the surface; and a p,n junction within the surface portion of the foregoing structure, at least a part of the junction adjoining the diffused surface region. The first layer comprises an indiffused region, so that there is a rounded-off doping impurity profile.
Inventors
- 👤 D Eckstein
- 👤 H Sauermann
- 👤 G Raabe
- 👤 G Winkler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 11:20
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/64; Y; Y10; Y10S; Y10S148/00; Y10S148/049; Y10S148/098
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
190 words
A semiconductor device including a semiconductor capacitance diode, comprising a. a substrate portion having a low resistivity and a first conductivity type; b. a first layer of said first conductivity type disposed on and having a higher resistivity than said substrate portion; c. at least a first further layer disposed at said first layer, said further layer having said first conductivity type and a lower resistivity than said first layer, said substrate, first layer and further layer comprising a semiconductor body comprising a surface portion of a given conductivity level; d. a diffused surface region at at least said surface portion, said diffused surface region having a conductivity level exceeding the given conductivity level of said surface portion and said first layer comprising indiffused regions containing first conductivity type doping material diffused therein from said substrate and said second further layer, respectively, whereby said semiconductor body is characterized by a rounded off doping impurity profile; and e. a p, n junction located within said surface portion and defined by a second conductivity type zone and said surface portion, at least a part of said junction adjoining said diffused surface region.
Claim 2
Dependent Claim
190 words
A semiconductor device including a semiconductor capacitance diode, comprising a. a substrate portion having a low resistivity and a first conductivity type; b. a first layer of said first conductivity type disposed on and having a higher resistivity than said substrate portion; c. at least a first further layer disposed at said first layer, said further layer having said first conductivity type and a lower resistivity than said first layer, said substrate, first layer and further layer comprising a semiconductor body comprising a surface portion of a given conductivity level; d. a diffused surface region at at least said surface portion, said diffused surface region having a conductivity level exceeding the given conductivity level of said surface portion and said first layer comprising indiffused regions containing first conductivity type doping material diffused therein from said substrate and said second further layer, respectively, whereby said semiconductor body is characterized by a rounded off doping impurity profile; and e. a p, n junction located within said surface portion and defined by a second conductivity type zone and said surface portion, at least a part of said junction adjoining said diffused surface region.
Claim 3
Dependent Claim
54 words
A semiconductor device as defined in claim 1, wherein said semiconductor body comprises at least two further layers disposed one upon another, each of said further layers having a lower resistivity value than its immediately underlying said further layer and the further layer located at the surface of said body comprising said surface region.
Claim 4
Dependent Claim
158 words
A semiconductor device including a semiconductor capacitance diode, comprising a. a substrate portion having a low resistivity and a first conductivity type; b. a first layer of said first conductivity type disposed on and having a higher resistivity than said substrate portion, said substrate and said first layer comprising a semiconductor body comprising a surface portion of a given conductivity level; c. a first conductivity type diffused surface region at at least said surface portion, said diffused surface region having a conductivity level exceeding the conductivity level of said surface portion and said first layer comprising indiffused regions containing first conductivity type doping material diffused therein from at least said substrate, whereby said semiconductor body is characterized by a rounded off doping impurity profile; and d. a p,n junction located within said surface portion and defined by a second conductivity type zone and said surface region, at least a part of said junction adjoining said diffused surface region.
Claim 5
Dependent Claim
158 words
A semiconductor device including a semiconductor capacitance diode, comprising a. a substrate portion having a low resistivity and a first conductivity type; b. a first layer of said first conductivity type disposed on and having a higher resistivity than said substrate portion, said substrate and said first layer comprising a semiconductor body comprising a surface portion of a given conductivity level; c. a first conductivity type diffused surface region at at least said surface portion, said diffused surface region having a conductivity level exceeding the conductivity level of said surface portion and said first layer comprising indiffused regions containing first conductivity type doping material diffused therein from at least said substrate, whereby said semiconductor body is characterized by a rounded off doping impurity profile; and d. a p,n junction located within said surface portion and defined by a second conductivity type zone and said surface region, at least a part of said junction adjoining said diffused surface region.
Claim 6
Dependent Claim
29 words
A semiconductor device as in claim 1, wherein said diffused surface region extends along the exposed surface of said surface region to a lesser extent than said p,n junction.
Claim 7
Dependent Claim
25 words
A semiconductor device as in claim 1, wherein said diffused surface region extends to a greater depth from said surface portion than said p,n junction.
Claim 8
Dependent Claim
23 words
A semiconductor device as in claim 1, wherein said further layer is characterized by a conductivity level below that of said substrate portion.
Claim 9
Dependent Claim
23 words
A semiconductor device as in claim 1, wherein said diffused surface region comprises a doping impurity concentration exceeding that of said substrate portion.
Claim 10
Dependent Claim
29 words
A semiconductor device as in claim 4, wherein said diffused surface region extends along the exposed surface of said surface region to a lesser extent than said p,n junction.
Claim 11
Dependent Claim
25 words
A semiconductor device as in claim 3, wherein said diffused surface region extends to a greater depth from said surface portion than said p,n junction.
Claim 12
Dependent Claim
23 words
A semiconductor device as in claim 3, wherein said diffused surface region comprises a doping impurity concentration exceeding that of said substrate portion.
Claim 13
Dependent Claim
35 words
A semiconductor device as in claim 3, wherein said diffused surface region comprises first and second first conductivity type doping impurities, said first impurity being characterized by a greater diffusion rate than said second impurity.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-10-07 | 1978-04-08 | 1978-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-10-07 | 1982-04-08 | 1982-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-10-07 | 1986-04-08 | 1986-10-08 | $7700.00 | Window Closed / Lapsed |