Integrated circuit of the logic circuit type comprising an electrically programmable non-volatile memory

Claim 1

An integrated circuit comprising: an electrically programmable non-volatile memory formed by a matrix of memory cells, each cell comprising a floating gate transistor, means for supplying a first supply voltage V CC having a first value, said first voltage being used for powering logic circuits in said circuit, means for supplying a second supply voltage V pp having a second value substantially higher than said first value, said second voltage being used for supplying programming pulses for programming the memory cells, said integrated circuit further comprising; detecting means for detecting the presence of said first voltage, said detecting means capable of producing an inhibiting signal when said second voltage is present and said first voltage has not a proper value, said inhibiting signal being used for prohibiting any transmission of a programming pulse to a memory cell, wherein said detecting means comprise an inverter having a serial arrangement of an input transistor and a first resistive transistor, said input transistor having a gate connected to said first voltage supply means and said serial arrangement being connected between said second voltage supply means and a ground, said detecting means further comprising a second resistive load transistor connected to the gate of said input transistor for automatically discharging to ground the gate of said input transistor in case the first supply voltage means is in a high impedance state.