US4863561A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for cleaning integrated circuit wafers
Assignee: Texas Instruments Inc
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Filing: 1988-09-26
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Granted: 1989-09-05
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Expires: 2008-09-26
Abstract
Abstract The described embodiment of the present invention provides a method and device for cleaning the surface of a silicon wafer using dry gases. At least one of the gases provided is excited by passing the gas through a microwave plasma generator or by heating the wafer thereby exciting the gases near the surface of the wafer. The excitation of the gases causes chemical reactions similar to those induced by ionization of the nongaseous cleaning materials in water. After a suitable etching period, the etching chamber is purged using an insert gas, such as nitrogen, which helps carry away the remaining reacted contaminants.
Inventors
- 👤 Dean W. Freeman
- 👤 Cecil J. Davis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:18
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/12; H10P70/125; H10P72/00; H10P72/04; H10P72/0402; H10P72/0406; Y; Y10; Y10S; Y10S438/00; Y10S438/906
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
31 words
A method for treating a semiconductor wafer comprising the steps of: providing said semiconductor wafer; exciting a cleaning gas to a non-plasma state; and flowing said cleaning gas over said wafer.
Claim 2
Independent Claim
31 words
A method for treating a semiconductor wafer comprising the steps of: providing said semiconductor wafer; exciting a cleaning gas to a non-plasma state; and flowing said cleaning gas over said wafer.
Claim 3
Dependent Claim
19 words
The method of claim 1 wherein said cleaning gas is excited in a chamber remote from said semiconductor wafer.
Claim 4
Independent Claim
40 words
A method for treating a semiconductor wafer comprising the steps of: providing said semiconductor wafer in a cleaning chamber; exciting a cleansing gas in excitation chamber; and introducing said excited cleansing gas into said cleaning chamber to a non-plasma state.
Claim 5
Independent Claim
40 words
A method for treating a semiconductor wafer comprising the steps of: providing said semiconductor wafer in a cleaning chamber; exciting a cleansing gas in excitation chamber; and introducing said excited cleansing gas into said cleaning chamber to a non-plasma state.
Claim 6
Dependent Claim
17 words
The method of claim 3 wherein an unexcited cleansing gas is also introduced into said cleansing chamber.
Claim 7
Dependent Claim
19 words
The method of claim 3 wherein said excited cleansing gas is excited in a plasma generator followed by reassociation.
Claim 8
Independent Claim
51 words
A method for treating a semiconductor wafer comprising the steps of: providing said semiconductor wafer on a chuck in a cleaning chamber; introducing a first cleansing gas into said cleaning chamber; and heating said chuck to excite said cleansing gas to react with contaminants on the surface of said semiconductor wafer.
Claim 9
Independent Claim
51 words
A method for treating a semiconductor wafer comprising the steps of: providing said semiconductor wafer on a chuck in a cleaning chamber; introducing a first cleansing gas into said cleaning chamber; and heating said chuck to excite said cleansing gas to react with contaminants on the surface of said semiconductor wafer.
Claim 10
Dependent Claim
17 words
The method of claim 6 wherein an unexcited cleansing gas is also introduced into said cleaning chamber.
Claim 11
Independent Claim
93 words
An apparatus for treating a semiconductor wafer comprising: (a) a cleaning chamber; (b) an excitation chamber having an outlet into said cleaning chamber; (c) a first valve controlling a source of cleaning gas into said excitation chamber; (d) means for exciting gases in said excitation chamber; (e) a second valve controlling an outlet from said cleaning chamber; (f) a third valve controlling a source of gas into said cleaning chamber; (g) a source of purge gas connected to said chamber; and (h) a chuck for holding said semiconductor wafer in said cleaning chamber.
Claim 12
Independent Claim
93 words
An apparatus for treating a semiconductor wafer comprising: (a) a cleaning chamber; (b) an excitation chamber having an outlet into said cleaning chamber; (c) a first valve controlling a source of cleaning gas into said excitation chamber; (d) means for exciting gases in said excitation chamber; (e) a second valve controlling an outlet from said cleaning chamber; (f) a third valve controlling a source of gas into said cleaning chamber; (g) a source of purge gas connected to said chamber; and (h) a chuck for holding said semiconductor wafer in said cleaning chamber.
Claim 13
Dependent Claim
16 words
The structure of claim 1 wherein said means for exciting said gases is a plasma generator.
Claim 14
Dependent Claim
14 words
The structure of claim 9 wherein said plasma generator is a microwave plasma generator.
Claim 15
Independent Claim
79 words
An apparatus for treating a semiconductor wafer comprising: (a) a cleaning chamber; (b) a first valve controlling a source of cleaning gas into said excitation chamber; (c) a second valve controlling an outlet from said cleaning chamber; (d) a third valve controlling a source of gas into said cleaning chamber; (e) a source of purge gas connected to said chamber; and (f) a chuck for holding said semiconductor wafer in said cleaning chamber, said chuck including a heating element.
Claim 16
Independent Claim
79 words
An apparatus for treating a semiconductor wafer comprising: (a) a cleaning chamber; (b) a first valve controlling a source of cleaning gas into said excitation chamber; (c) a second valve controlling an outlet from said cleaning chamber; (d) a third valve controlling a source of gas into said cleaning chamber; (e) a source of purge gas connected to said chamber; and (f) a chuck for holding said semiconductor wafer in said cleaning chamber, said chuck including a heating element.
Claim 17
Dependent Claim
14 words
The structure of claim 11 wherein said heating element is a resistance heating element.
Claim 18
Dependent Claim
14 words
The method of claim 6 wherein the chuck is heated to approximately 150°-200° C.
Claim 19
Dependent Claim
19 words
The apparatus of claim 12 wherein the heating element is capable of heating the wafer to approximately 150°-200° C.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-09-04 | 1993-03-06 | 1993-09-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-09-04 | 1997-03-06 | 1997-09-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-09-04 | 2001-03-06 | 2001-09-05 | $7700.00 | Window Closed / Lapsed |