US4643799A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of dry etching
Assignee: Hitachi Ltd
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Filing: 1985-12-16
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Granted: 1987-02-17
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Expires: 2005-12-16
Abstract
Abstract A dry etching method according to the present invention is composed of the steps of evacuating the reaction chamber in which a substrate to be etched is set, introducing etching gas into the reaction chamber, causing the substrate to adsorb the introduced etching gas and thereafter evacuate the etching gas remaining in the reaction chamber, and irradiating the surface of the substrate to be etched with photon energy through a light window provided in the reaction chamber.
Inventors
- 👤 Kanji Tsujii
- 👤 Yusuke Yajima
- 👤 Seiichi Murayama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 04:10
CPC Classifications
C; C23; C23C; C23C26/00; C23C14/00; C23C14/22; C23F; C23F4/00; H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
70 words
A dry etching method comprising the steps of: evacuating the reaction chamber in which a substrate to be etched is set; introducing etching gas into the reaction chamber; causing the substrate to adsorb the introduced etching gas and thereafter evacuate the etching gas remaining in the reaction chamber; and irradiating the surface of the substrate to be etched with photon energy through a light window provided in the reaction chamber.
Claim 2
Dependent Claim
70 words
A dry etching method comprising the steps of: evacuating the reaction chamber in which a substrate to be etched is set; introducing etching gas into the reaction chamber; causing the substrate to adsorb the introduced etching gas and thereafter evacuate the etching gas remaining in the reaction chamber; and irradiating the surface of the substrate to be etched with photon energy through a light window provided in the reaction chamber.
Claim 3
Dependent Claim
34 words
A dry etching method according to claim 1, wherein process cycles consisting of the series of steps of evacuation of said reaction chamber to irradiation of said substrate with said photon energy are repeated.
Claim 4
Dependent Claim
64 words
A dry etching method according to claim 1, wherein said reaction chamber consists of first and second compartments, said series of steps of evacuation of said reaction chamber to evacuation of said etching gas remaining in said reaction chamber are carried out in said first compartment, and said substrate is fed to said second compartment in order to be irradiated with said photon energy.
Claim 5
Dependent Claim
95 words
A dry etching method according to claim 1, wherein said light window is provided with a partition wall which is able to be freely opened and closed in order to prevent said etching gas from being adsorbed onto said light window, said series of steps at least of introduction of etching gas into said reaction chamber to evacuation of said etching gas remaining in said reaction chamber are carried out with said partition wall closed, and thereafter said partition wall is opened to carry out said step of irradiating said substrate with said photon energy.
Claim 6
Dependent Claim
20 words
A dry etching method according to claim 1, wherein gas containing a halogen element is used as said etching gas.
Claim 7
Dependent Claim
29 words
A dry etching method according to claim 1, wherein photon energy which has been passed through a desired pattern drawn on a mask is used as said photon energy.
Claim 8
Dependent Claim
22 words
A dry etching method according to claim 1, wherein photon energy from a reduction projection aligner is used as said photon energy.
Claim 9
Dependent Claim
22 words
A dry etching method according to claim 1, wherein photon energy from a laser light source is used as said photon energy.
Claim 10
Dependent Claim
32 words
A dry etching method according to claim 1, wherein photon energy by means of a photocoupler introduced by an optical fiber from said laser light source is used as said photon energy.
Claim 11
Dependent Claim
45 words
A dry etching method according to claim 1, wherein a laser beam which is emitted from said laser light source is divided and photon energy by means of an interference fringe formed by each of the divided laser beams is used as said photon energy.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-02-16 | 1990-08-18 | 1991-02-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-02-16 | 1994-08-18 | 1995-02-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-02-16 | 1998-08-18 | 1999-02-17 | $7700.00 | Window Closed / Lapsed |