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Method of making an ion-implanted bonding connection of a semiconductor integrated circuit device

Assignee: Ricoh Co Ltd
•
Filing: 1988-02-22
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Granted: 1989-08-15
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Expires: 2008-02-22
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Abstract

Abstract A method for forming a bonding connection in a semiconductor integrated cirucit device includes a step of ion implanting a bonding pad of aluminum with silicon atoms before bonding a bonding wire to the bonding pad. The silicon atoms are introduced into the bonding pad only at its surface and its vicinity, so that the bonding pad is provided with an enhanced humidity-resistant characteristic while maintaining the overall electrical resistance of an interconnection system at a low level.

Inventors

  • 👤 Masami Nishikawa

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 12:06
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/01; H10W72/019; H10W72/012; H10W72/20; H10W72/251; H10W72/29; H10W72/50; H10W72/531; H10W72/536; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/90; H10W72/931; H10W72/932; H10W72/934; H10W72/951; H10W72/952; H10W72/981; H10W72/983

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 62 words
A method for forming a bonding connection in a semiconductor integrated circuit device, comprising: (a) forming a bonding pad of aluminum on a semiconductor substrate over an intervening insulation layer; (b) ion implanting silicon ions into said bonding pad to a depth of about 500 Å from the bonding pad surface; and (c) bonding an electrically conductive wire to said bonding pad.
Claim 2
Independent Claim 62 words
A method for forming a bonding connection in a semiconductor integrated circuit device, comprising: (a) forming a bonding pad of aluminum on a semiconductor substrate over an intervening insulation layer; (b) ion implanting silicon ions into said bonding pad to a depth of about 500 Å from the bonding pad surface; and (c) bonding an electrically conductive wire to said bonding pad.

References Cited (Backward Citations)

US3328210A Cited
US3562022A Cited
US3765970A Cited
US3912546A Cited
US4321104A Cited
US4534105A Cited
US4672740A Cited
JPS60183739A Cited
US4622576A Cited
JPS61256626A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1992-08-14 1993-02-13 1993-08-15 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1996-08-14 1997-02-13 1997-08-15 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2000-08-14 2001-02-13 2001-08-15 $7700.00 Window Closed / Lapsed

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