US3562022A
Expired / Lapsed
US
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Method of doping semiconductor bodies by indirection implantation
Assignee: Raytheon Co
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Filing: 1967-12-26
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Granted: 1971-02-09
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Expires: 1987-12-26
Abstract
Abstract METHOD OF DOPING A SEMICONDUCTOR BODY BY APPLYING A LAYER OF THE DESIRED DOPANT ON THE SURFACE OF THE SEMICONDUCTOR, IRRADIATING THIS DOPANT LAYER WITH A BEAM OF INSERT IONS TO DRIVE ATOMS OF THE DOPANT INTO THE SEMICONDUCTOR BODY.
Inventors
- 👤 Gordon A Shifrin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 03:44
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/214
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-02-08 | 1974-08-10 | 1975-02-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-02-08 | 1978-08-10 | 1979-02-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-02-08 | 1982-08-10 | 1983-02-09 | $7700.00 | Window Closed / Lapsed |