US4852111A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser device
Assignee: Sharp Corp
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Filing: 1987-12-15
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Granted: 1989-07-25
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Expires: 2007-12-15
Abstract
Abstract A semiconductor laser device comprising a substrate of a first conductivity type having a mesa; a first semiconductor layer of a second conductivity type which is formed on the upper surface of the substrate other than the mesa to form a flat plane including the top face of the mesa; a laser oscillation region which is formed on the flat plane and includes an active area for laser oscillation; and a multi-layer structure burying the laser oscillation region, the multi-layer structure comprising a high resistance layer formed on the first semiconductor layer and burying both sides of the laser oscillation region, and a second semiconductor layer of the first conductivity type formed on the high resistance layer.
Inventors
- 👤 Toshiro Hayakawa
- 👤 Takahiro Suyama
- 👤 Kosei Takahashi
- 👤 Masafumi Kondo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:35
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/2275
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
147 words
In a semiconductor laser device comprising: a substrate of a first conductivity type having a mesa; a first semiconductor layer of a second conductivity type which is formed on the upper surface of said substrate other than said mesa to form a flat plane including the top face of said mesa; a laser oscillation structure comprising a first cladding layer, a first GRIN layer, a second GRIN layer, and a second cladding layer, which is formed on said flat plane and includes an active area for laser oscillation between said first and second GRIN layers and above said mesa; and a multi-layer structure burying said laser oscillation structure, said multi-layer structure comprising a high resistance layer formed on said first semiconductor layer and burying both sides of said laser oscillation structure, and a second semiconductor layer of the first conductivity type formed on said high resistance layer.
Claim 2
Dependent Claim
147 words
In a semiconductor laser device comprising: a substrate of a first conductivity type having a mesa; a first semiconductor layer of a second conductivity type which is formed on the upper surface of said substrate other than said mesa to form a flat plane including the top face of said mesa; a laser oscillation structure comprising a first cladding layer, a first GRIN layer, a second GRIN layer, and a second cladding layer, which is formed on said flat plane and includes an active area for laser oscillation between said first and second GRIN layers and above said mesa; and a multi-layer structure burying said laser oscillation structure, said multi-layer structure comprising a high resistance layer formed on said first semiconductor layer and burying both sides of said laser oscillation structure, and a second semiconductor layer of the first conductivity type formed on said high resistance layer.
Claim 3
Dependent Claim
16 words
A semiconductor laser device according to claim 1, wherein said active area comprises quantum well layers.
Claim 4
Dependent Claim
25 words
A semiconductor laser device according to claim 1, wherein the width of said active area is substantially the same as the width of said mesa.
Claim 5
Dependent Claim
19 words
A semiconductor laser device according to claim 1, wherein said laser oscillation structure is formed as a mesa shape.
Claim 6
Dependent Claim
20 words
A semiconductor laser device according to claim 1, wherein said laser oscillation structure is formed as a reversed mesa shape.
Claim 7
Dependent Claim
38 words
A semiconductor laser device according to claim 1, wherein said laser oscillation structure is formed as a mesa shape in which the width of the middle portion is smaller than the widths of the top and bottom portions.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-24 | 1993-01-23 | 1993-07-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-24 | 1997-01-23 | 1997-07-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-24 | 2001-01-23 | 2001-07-25 | $7700.00 | Window Closed / Lapsed |