Patent US4851668A successfully refreshed from Google Patents.
US4851668A
Expired / Lapsed
US
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Ion source application device
Assignee: Hitachi Ltd
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Filing: 1987-04-06
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Granted: 1989-07-25
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Expires: 2007-04-06
Abstract
Abstract An ion source application device comprising a gas tight plasma formation chamber sustaining a plasma produced by high frequency discharge, a high frequency coil producing the high frequency discharge, and means for extracting an ion beam from the plasma thus produced, characterized in that it comprises further an electron beam generator or a laser light generator as means for obtaining electrons serving as seeds for starting the high frequency discharge.
Inventors
- 👤 Tasunori Ohno
- 👤 Tomoe Kurosawa
- 👤 Tadashi Sato
- 👤 Yukio Kurosawa
- 👤 Yoshimi Hakamata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 07:51
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J27/00; H01J27/02; H01J27/16; H01J27/20; H01J27/24; H01J37/02; H01J37/04; H01J37/08; H01J2237/00; H01J2237/004; H01J2237/0041
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
173 words
An ion source application device comprising: gas tight plasma formation chamber means for sustaining a plasma produced by high frequency discharge; high frequency coil means, including a closed circuit, for producing said high frequency discharge; means for extracting an ion beam from the plasma thus produced; working chamber means for enclosing an object to be worked by said ion beam; electron beam generator means, disposed within said working chamber means, for generating an electron beam and for obtaining electrons serving as seeds for starting said high frequency discharge; and means for deflecting said electron beam toward said plasma formation chamber means, said deflecting means extracting electrons generated by said electron beam generator means in said working chamber means and enabling introduction of the extracted electrons into said plasma formation chamber means only when said high frequency discharge is to be started; wherein said electron beam generator means enables both starting of the plasma produced within said plasma formation chamber means and neutralizing of said ion beam within said working chamber means in common.
Claim 2
Dependent Claim
173 words
An ion source application device comprising: gas tight plasma formation chamber means for sustaining a plasma produced by high frequency discharge; high frequency coil means, including a closed circuit, for producing said high frequency discharge; means for extracting an ion beam from the plasma thus produced; working chamber means for enclosing an object to be worked by said ion beam; electron beam generator means, disposed within said working chamber means, for generating an electron beam and for obtaining electrons serving as seeds for starting said high frequency discharge; and means for deflecting said electron beam toward said plasma formation chamber means, said deflecting means extracting electrons generated by said electron beam generator means in said working chamber means and enabling introduction of the extracted electrons into said plasma formation chamber means only when said high frequency discharge is to be started; wherein said electron beam generator means enables both starting of the plasma produced within said plasma formation chamber means and neutralizing of said ion beam within said working chamber means in common.
Claim 3
Dependent Claim
15 words
An ion source application device according to claim 1, wherein said electron beam is omnidirectional.
Claim 4
Dependent Claim
80 words
An ion source application device comprising: gas tight plasma formation chamber means for sustaining a plasma produced by high frequency discharge; high frequency coil means for producing said high frequency discharge; means for extracting an ion beam from the plasma thus produced; and laser light generator means for generating laser light for obtaining electrons serving as seeds for starting said high frequency discharge, said laser light generator means being at least partially disposed outside of said plasma formation chamber means.
Claim 5
Dependent Claim
80 words
An ion source application device comprising: gas tight plasma formation chamber means for sustaining a plasma produced by high frequency discharge; high frequency coil means for producing said high frequency discharge; means for extracting an ion beam from the plasma thus produced; and laser light generator means for generating laser light for obtaining electrons serving as seeds for starting said high frequency discharge, said laser light generator means being at least partially disposed outside of said plasma formation chamber means.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-24 | 1993-01-23 | 1993-07-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-24 | 1997-01-23 | 1997-07-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-24 | 2001-01-23 | 2001-07-25 | $7700.00 | Window Closed / Lapsed |