Process for determining photoresist develop time by optical transmission

Claim 2

In a method of developing patterned photoresist polymer on a semiconductor wafer and detecting the endpoint of the develop process as determined by the transparency of the developer fluid to a beam of light, which transparency is dependent upon the amount of photoresist polymer dissolved in the developer fluid, the steps of; covering the semiconductor wafer with a developer fluid, reflecting a first beam of light off the surface of the developer-covered semiconductor wafer as the developer dissolves the photoresist polymer, and detecting the reflected light beam, thereby measuring the transparency of the developer fluid which is dependent upon the amount of dissolved photoresist polymer in the developer fluid.

Claim 3

The method according to claim 1, wherein said first beam of light is of a 254 nanometer wavelength.

Claim 4

The method according to claim 1 wherein a second beam of light is reflected off the surface of the semiconductor wafer during the developing of the photoresist polymer, said second beam of light being used as a reference for comparison with said first beam of light, the photoresist polymer in the developer affecting the second beam of light differently than said first beam of light.

Claim 5

The method according to claim 2 wherein said second beam of light is of a 577 nanometer wavelength.

Claim 6

The method according to claim 1 wherein the developer fluid is spun onto the semiconductor wafer, thereafter the spinning of the wafer is stopped during the developing time, and after completion of development of the photoresist polymer, the developer fluid is spun off and the wafer is rinsed in a spray of deionized water.

Claim 7

The method according to claim 1 wherein deionized water is used as a reference as the 100% transmission level for comparison with the first beam of light.

Claim 8

The method according to claim 1 wherein a band of light is used instead of a single wavelength of light.

Claim 9

The method according to claim 7 wherein the band of light is from 250 to 400 nanometers.

Claim 10

In a method of developing patterned photoresist polymer on a semiconductor wafer and detecting the endpoint of the develop process as determined by the transparency of the developer fluid to a beam of light, which transparency is dependent upon the amount of photoresist polymer dissolved in the developer fluid, the steps of; spinning the semiconductor wafer on a spinner chuck while applying a developer fluid to the surface thereof, stopping the spinning of the semiconductor wafer while the developer fluid is dissolving the photoresist polymer, reflecting a first beam of light through the developer fluid off the surface of the semiconductor wafer, detecting the beam of light with a photodetector, continuously monitoring the amount of light detected by the photodetector during the time the developer is dissolving the photoresist polymer, the amount of reflected light being affected by the amount of photoresist polymer dissolved in the developer fluid, and rinsing the developer fluid from the surface of the semiconductor wafer when the amount of reflected light decreases to a predetermined amount.

Claim 11

In a method of developing patterned photoresist polymer on a semiconductor wafer and detecting the endpoint of the develop process as determined by the transparency of the developer fluid to a beam of light, which transparency is dependent upon the amount of photoresist polymer dissolved in the developer fluid, the steps of; spinning the semiconductor wafer on a spinner chuck while applying a developer fluid to the surface thereof, stopping the spinning of the semiconductor wafer while the developer fluid is dissolving the photoresist polymer, reflecting a first beam of light through the developer fluid off the surface of the semiconductor wafer, detecting the beam of light with a photodetector, continuously monitoring the amount of light detected by the photodetector during the time the developer is dissolving the photoresist polymer, the amount of reflected light being affected by the amount of photoresist polymer dissolved in the developer fluid, and rinsing the developer fluid from the surface of the semiconductor wafer when the amount of reflected light decreases to a predetermined amount.

Claim 12

The method according to claim 9, wherein said first beam of light is of a 254 nanometer wavelength.

Claim 13

The method according to claim 9 wherein a second beam of light is reflected off the surface of the semiconductor wafer during the developing of the photoresist polymer, said second beam of light being used as a reference for comparison with said first beam of light, the photoresist polymer in the developer affecting the second beam of light differently than said first beam of light.

Claim 14

The method according to claim 11 wherein said second beam of light is of a 577 nanometer wavelength.

Claim 15

The method according to claim 9 wherein deionized water is used as a reference as the 100% transmission level for comparison with the first beam of light.

Claim 16

The method according to claim 9 wherein a band of light is used instead of a single wavelength of light.

Claim 17

The method according to claim 14 wherein the band of light is from 250 to 400 nanometers.

Claim 18

The method according to claim 14 wherein a filter is used to filter out all wavelengths of light except 254 nanometers.

Claim 19

The method according to claim 9 wherein the intensity or intermittent pulse duration of the beam of light is maintained below the point of photochemical action of the photoresist.