Patent US4849372A successfully refreshed from Google Patents.
US4849372A
Expired / Lapsed
US
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Semiconductor laser device and a method of producing same
Assignee: Mitsubishi Electric Corp
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Filing: 1988-02-16
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Granted: 1989-07-18
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Expires: 2008-02-16
Abstract
Abstract A semiconductor laser device of the buried heterostructure type in which leakage current is substantially reduced. A mesa portion carries the active lasing portion of the laser, and current blocking layers are grown at either side of the mesa portion. One of the current blocking layers has its conductivity type inverted to the opposite type to eliminate a current leakage path, thereby to provide a high efficiency low leakage current semiconductor laser. Conductivity inversion is accomplished by adjusting the impurity concentration levels in the layers on either side of the mesa portion, and controllably diffusing impurities from one layer to another until conductivity inversion is accomplished in a thin tip portion of one of the layers.
Inventors
- 👤 Akira Takemoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 18:24
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; H01S5/2275; Y; Y10; Y10S; Y10S148/00; Y10S148/095; Y10S438/00; Y10S438/914; Y10S438/919
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
164 words
A method of producing a semiconductor laser device comprising: growing an active layer and a second conductivity type first cladding layer successively on a first conductivity type semiconductor substrate; etching the active and first cladding layers on either side of a central stripe to produce a mesa-portion; growing additional layers having predetermined concentrations of impurities on the semiconductor substrate on either side of the mesa portion, the successively grown layers including a first conductivity type embedded layer, a second conductivity type first current blocking layer, and a first conductivity type second current blocking layer; growing a second conductivity type second cladding layer on the second current blocking layer and the first cladding layer; and diffusing impurities into the first current blocking layer from at least one of the embedded layer and the second current blocking layer for a time sufficient to invert the conductivity type of a tip portion of the first current blocking layer thereby to minimize leakage through the semiconductor laser device.
Claim 2
Independent Claim
164 words
A method of producing a semiconductor laser device comprising: growing an active layer and a second conductivity type first cladding layer successively on a first conductivity type semiconductor substrate; etching the active and first cladding layers on either side of a central stripe to produce a mesa-portion; growing additional layers having predetermined concentrations of impurities on the semiconductor substrate on either side of the mesa portion, the successively grown layers including a first conductivity type embedded layer, a second conductivity type first current blocking layer, and a first conductivity type second current blocking layer; growing a second conductivity type second cladding layer on the second current blocking layer and the first cladding layer; and diffusing impurities into the first current blocking layer from at least one of the embedded layer and the second current blocking layer for a time sufficient to invert the conductivity type of a tip portion of the first current blocking layer thereby to minimize leakage through the semiconductor laser device.
Claim 3
Dependent Claim
68 words
The method of producing a semiconductor laser device as set forth in claim 1 including adjusting the impurity concentration levels such that at least one of the embedded layer and the second current blocking layer has a high impurity concentration relative to the first current blocking layer, and wherein impurities diffused from the high impurity concentration layer control the inversion of the conductivity type of the tip portion.
Claim 4
Dependent Claim
64 words
The method of producing a semiconductor laser device as set forth in claim 1 including adjusting the impurity concentration levels such that the first current blocking layer has a high impurity concentration relative to the embedded layer and the second current blocking layer, and wherein impurities diffused from the first current blocking layer control the inversion of the conductivity type of the tip portion.
Claim 5
Dependent Claim
29 words
The method of producing a semiconductor laser device as defined in claim 1 wherein said diffusion is conducted during the process of growing the layers on the semiconductor substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-17 | 1993-01-16 | 1993-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-17 | 1997-01-16 | 1997-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-17 | 2001-01-16 | 2001-07-18 | $7700.00 | Window Closed / Lapsed |