Buried type semiconductor laser device

Abstract

Abstract PURPOSE:To enable to obtain the titled device of a low threshold value having lees current leakage by contriving the optimization of the carrier concentration of each layer. CONSTITUTION:An N-InP buffer layer 2 (with a carrier concentration of 1X 10<16>-1X10<18>cm<-3>), a GaInAsP active layer 3, a P-InP clad layer 4, and a P- GaInAsP ohmic contact layer 5 are successively grown on an N type InP substrate 1, thus obtaining a wafer of double hetero structure. Next, a stripe-form SiO2 film is formed, and a reverse mesa stripe is obtained by etching with the film as a mask. Then, the reverse mesa is buried, and a P-InP buried layer 6 and an N-InP buried layer 7 are formed. In this case, the carrier concentration or the layer 6 is set at 2X10<18>-1X10<19>cm<-3>, and that of the layer 7 at 2X 10<16>cm<-3>-1X10<18>cm<-3>. Thereby, the p type impurity of the layer 6 diffuses sufficiently, an excellent P-N junction being formed, and the leakage of current then reducing; accordingly sufficient low threshold oscillation is enabled.

Inventors

• 👤 Yuzo Hirayama
• 👤 雄三 平山
• 👤 Yutaka Uematsu
• 👤 豊 植松

Bibliographic Details