US4849248A
Expired / Lapsed
US
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Ion implantation method for making silicon-rich silicon dioxide film
Assignee: Texas Instruments Inc
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Filing: 1986-11-26
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Granted: 1989-07-18
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Expires: 2006-11-26
Abstract
Abstract A silicon dioxide film containing additional silicon in the form of segregates having controlled grain sizs is fabricated by forming a silicon dioxide, injecting silicon ions into the silicon dioxide film by ion implantation with a predetermined ion acceleration energy and a predetermined ion dose, and annealing the resultant silicon dioxide film for causing the additional silicon atoms in the silicon dioxide film to segregate therein to form segregates of silicon having grain sizes which are substantially predominated by the predetermined ion acceleration energy and the predetermined ion dose.
Inventors
- 👤 Masashi Hashimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 22:28
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10P; H10P30/00; H10P30/40
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
100 words
A method of producing silicon-rich silicon dioxide film comprising the steps of: (a) forming a silicon dioxide film, (b) injecting silicon ions into the silicon dioxide film by ion implantation with an ion acceleration energy between about 20 keV and 50 keV and an ion dose between about 1×10 16 and 8×10 16 atoms/cm 2 , and (c) annealing the resultant silicon dioxide film at a temperature between about 900° C. and 1100° C. for a time between about 20 and 40 minutes to cause the additional silicon atoms in the silicon dioxide film to form segregates of silicon therein.
Claim 2
Independent Claim
100 words
A method of producing silicon-rich silicon dioxide film comprising the steps of: (a) forming a silicon dioxide film, (b) injecting silicon ions into the silicon dioxide film by ion implantation with an ion acceleration energy between about 20 keV and 50 keV and an ion dose between about 1×10 16 and 8×10 16 atoms/cm 2 , and (c) annealing the resultant silicon dioxide film at a temperature between about 900° C. and 1100° C. for a time between about 20 and 40 minutes to cause the additional silicon atoms in the silicon dioxide film to form segregates of silicon therein.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-17 | 1993-01-16 | 1993-07-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-17 | 1997-01-16 | 1997-07-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-17 | 2001-01-16 | 2001-07-18 | $7700.00 | Window Closed / Lapsed |